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HAF2026RJ Dataheets PDF



Part Number HAF2026RJ
Manufacturers Renesas Technology
Logo Renesas Technology
Description Silicon N Channel Power MOSFET Power Switching
Datasheet HAF2026RJ DatasheetHAF2026RJ Datasheet (PDF)

HAF2026RJ Silicon N Channel Power MOS FET Power Switching REJ03G1255-0200 Rev.2.00 Jun 02, 2006 Description This FET has the over temperature shut-down capability sensing to the junction temperature. This FET has the built-in over temperature shut-down circuit in the gate area. And this circuit operation to shut-down the gate voltage in case of high junction temperature like applying over power consumption, over current etc.. Features • • • • • Logic level operation (5 to 6 V Gate drive) Built.

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