ALM-1612 Module Datasheet

ALM-1612 Datasheet PDF, Equivalent


Part Number

ALM-1612

Description

GPS LNA-Filter Front-End Module

Manufacture

Avago

Total Page 18 Pages
Datasheet
Download ALM-1612 Datasheet


ALM-1612
ALM-1612
GPS LNA-Filter Front-End Module
Data Sheet
Description
Avago Technologies’ ALM-1612 is a GPS front-end module
that combines a low-noise amplifier (LNA) with a GPS FBAR
filter. The LNA uses Avago Technologies’ proprietary GaAs
Enhancement-mode pHEMT process to achieve high gain
with very low noise figure and high linearity. Noise figure
distribution is very tightly controlled. A CMOS-compat-
ible shutdown pin is included either for turning the LNA
on/off, or for current adjustment. The integrated filter
utilizes an Avago Technologies’ leading-edge FBAR filter
for exceptional rejection at Cell/PCS-Band frequencies.
The low noise figure and high gain, coupled with low
current consumption make it suitable for use in critical low-
power GPS applications or during low-battery situations.
Component Image
Surface Mount 3.3x2.1x1 mm3 12-lead MCOB
SD (1)
1612
Gnd (2)
RFin (3) WWYY
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Gnd (9)
RFOut (8)
Gnd (7)
Gnd (9)
RFOut (8)
Gnd (7)
SD (1)
Gnd (2)
RFin (3)
TOP VIEW
BOTTOM VIEW
Note:
Package marking provides orientation and identification
“1612” = Product Code
“YY” = Year of manufacture
“WW” = Work week of manufacture
Features
x Very Low Noise Figure: 0.95 dB typ.
x High Gain: 18.2 dB typ.
x High IIP3 and IP1dB
x Exceptional Cell/PCS-Band rejection
x Advanced GaAs E-pHEMT & FBAR Technology
x Low external component count
x Shutdown current: < 5 uA
x CMOS compatible shutdown pin (SD) current @ 2.7 V:
0.1mA
x ESD: For RFin (Pin 3): ESD Human Body Model > 3kV;
All other pins: ESD Machine Model = 70V, ESD Human
Body Model = 300V
x Meets MSL3
x Useable down to 1.8V supply
x Adjustable current via single external resistor/voltage
x Small package dimension: 3.3(L)x2.1(W)x1(H) mm3
Specifications (Typical performance @ 25°C)
At 1.575GHz, Vdd = 2.7V, Idd = 6.0mA
x Gain = 18.2 dB
x NF = 0.95 dB
x IIP3 = +2 dBm, IP1dB = -8 dBm
x S11 = -9 dB, S22 = -14 dB
x Cell-Band Rejection: 69 dBc
x PCS-Band Rejection: 67 dBc
Application Circuit
+Vdd = 2.7V
Application
x GPS Receiver Front-end Module
Vbias Rbias
RFin RFout
LNA GPS
Filter

ALM-1612
Absolute Maximum Rating[1] TA = 25°C
Symbol
Vdd
Idd
Pin,max
Pdiss
Tj
TSTG
Parameter
Units
Device Drain to Source Voltage[2] V
Drain Current[2]
mA
CW RF Input Power
(Vdd = 2.7V, Idd = 6mA)
dBm
Total Power Dissipation[4]
mW
Junction Temperature
°C
Storage Temperature
°C
Product Consistency Distribution Charts[5,6]
LSL
LSL = 16.5 dB
nominal = 18.2 dB
Absolute Max.
3.6
15
13
54
150
-65 to 150
Thermal Resistance[3]
(Vdd = 2.7 V, Idd = 6mA), Θjc = 133.3°C/W
Notes:
1. Operation of this device in excess of any of
these limits may cause permanent damage.
2. Assuming DC quiescent conditions.
3. Thermal resistance measured using Infra-Red
measurement technique.
4. Board (module belly) temperature TB is 25°C.
Derate 7.5 mW/°C for Tb > 142°C.
USL = 1.2 5 dB,
nominal = 0.95 dB
USL
17 18 19 20
Figure 1. Gain at 1.575 GHz
.2 .3 .4 .5 .6 .7 .8 .9
Figure 2. NF at 1.575GHz
1 1.1 1.2
USL LSL
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USL = 11.5 mA,
nominal = 6 mA
LSL = 50 dBc,
nominal = 69 dBc
5 6 7 8 9 10 11
Figure 3. Id at 1.575 GHz
LSL
LSL = 50 dBc,
nominal = 67 dBc
50 55 60 65 70 75
Figure 5. PCS band Rejection at 1885MHz relative to 1.575 GHz
50 60 70
Figure 4. Cell band Rejection at 827.5MHz relative to 1.575 GHz
80
Notes:
5. Distribution data sample size is 5900 samples taken from 7 different
LNA wafer lots and 2 different filter wafer lots. Future wafers allocated
to this product may have nominal values anywhere between the
upper and lower limits.
6. Measurements are made on a production test board, which
represents a trade-off between optimal Gain, NF, IIP3, IP1dB, VSWR,
Cell Band and PCS Band Rejection. Circuit trace losses have not been
de-embedded from actual measurements.
2


Features ALM-1612 GPS LNA-Filter Front-End Modul e Data Sheet Description Avago Technol ogies’ ALM-1612 is a GPS front-end mo dule that combines a low-noise amplifi er (LNA) with a GPS FBAR filter. The L NA uses Avago Technologies’ proprieta ry GaAs Enhancement-mode pHEMT process to achieve high gain with very low nois e figure and high linearity. Noise fi gure distribution is very tightly contr olled. A CMOS-compatible shutdown pin i s included either for turning the LNA o n/off, or for current adjustment. The integrated filter utilizes an Avago Te chnologies’ leading-edge FBAR filter for exceptional rejection at Cell/PCS- Band frequencies. The low noise figure and high gain, coupled with low curren t consumption make it suitable for use in critical lowpower GPS applications o r during low-battery situations. Featu res x Very Low Noise Figure: 0.95 dB ty p. x High Gain: 18.2 dB typ. x High IIP 3 and IP1dB x Exceptional Cell/PCS-Band rejection x Advanced GaAs E-pHEMT & FBAR Technology x Low external component count x.
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