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ALM-1612 Dataheets PDF



Part Number ALM-1612
Manufacturers Avago
Logo Avago
Description GPS LNA-Filter Front-End
Datasheet ALM-1612 DatasheetALM-1612 Datasheet (PDF)

ALM-1612 GPS LNA-Filter Front-End Module Data Sheet Description Avago Technologies’ ALM-1612 is a GPS front-end module that combines a low-noise amplifier (LNA) with a GPS FBAR filter. The LNA uses Avago Technologies’ proprietary GaAs Enhancement-mode pHEMT process to achieve high gain with very low noise figure and high linearity. Noise figure distribution is very tightly controlled. A CMOS-compatible shutdown pin is included either for turning the LNA on/off, or for current adjustment. The in.

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ALM-1612 GPS LNA-Filter Front-End Module Data Sheet Description Avago Technologies’ ALM-1612 is a GPS front-end module that combines a low-noise amplifier (LNA) with a GPS FBAR filter. The LNA uses Avago Technologies’ proprietary GaAs Enhancement-mode pHEMT process to achieve high gain with very low noise figure and high linearity. Noise figure distribution is very tightly controlled. A CMOS-compatible shutdown pin is included either for turning the LNA on/off, or for current adjustment. The integrated filter utilizes an Avago Technologies’ leading-edge FBAR filter for exceptional rejection at Cell/PCS-Band frequencies. The low noise figure and high gain, coupled with low current consumption make it suitable for use in critical lowpower GPS applications or during low-battery situations. Component Image Surface Mount 3.3x2.1x1 mm3 12-lead MCOB Gnd (10) Gnd (11) Vdd (12) Vdd (12) Gnd (11) Gnd (10) SD (1) Gnd (2) RFin (3) 1612 WWYY Gnd (9) RFOut (8) Gnd (7) Gnd (9) RFOut (8) Gnd (7) SD (1) Gnd (2) RFin (3) Gnd (6) Gnd (5) Gnd (4) Gnd (4) Gnd (5) Gnd (6) TOP VIEW BOTTOM VIEW Note: Package marking provides orientation and identification “1612” = Product Code “YY” = Year of manufacture “WW” = Work week of manufacture Features  Very Low Noise Figure: 0.95 dB typ.  High Gain: 18.2 dB typ.  High IIP3 and IP1dB  Exceptional Cell/PCS-Band rejection  Advanced GaAs E-pHEMT & FBAR Technology  Low external component count  Shutdown current: < 5 uA  CMOS compatible shutdown pin (SD) current @ 2.7 V: 0.1mA  ESD: For RFin (Pin 3): ESD Human Body Model > 3kV; All other pins: ESD Machine Model = 70V, ESD Human Body Model = 300V  Meets MSL3  Useable down to 1.8V supply  Adjustable current via single external resistor/voltage  Small package dimension: 3.3(L)x2.1(W)x1(H) mm3 Specifications (Typical performance @ 25°C) At 1.575GHz, Vdd = 2.7V, Idd = 6.0mA  Gain = 18.2 dB  NF = 0.95 dB  IIP3 = +2 dBm, IP1dB = -8 dBm  S11 = -9 dB, S22 = -14 dB  Cell-Band Rejection: 69 dBc  PCS-Band Rejection: 67 dBc Application Circuit +Vdd = 2.7V Application  GPS Receiver Front-end Module Vbias Rbias RFin RFout LNA GPS Filter Absolute Maximum Rating[1] TA = 25°C Symbol Vdd Idd Pin,max Pdiss TL Tj TSTG Parameter Units Device Drain to Source Voltage[2] V Drain Current[2] mA CW RF Input Power dBm (Vdd = 2.7V, Idd = 6mA) Total Power Dissipation[4] mW Operating Temperature °C Junction Temperature °C Storage Temperature °C Absolute Max. 3.6 15 13 54 -40 to 85 150 -65 to 150 Thermal Resistance[3] (Vdd = 2.7 V, Idd = 6mA), Θjc = 133.3°C/W Notes: 1. Operation of this device in excess of any of these limits may cause permanent damage. 2. Assuming DC quiescent conditions. 3. Thermal resistance measured using Infra-Red measurement technique. 4. Board (module belly) temperature TB is 25°C. Derate 7.5 mW/°C for Tb > 142°C. Electrical Specifications TA = 25°C, DC bias for RF parameters is as specified below. Freq=1.575GHz – Typical Performance[7] Table 1a. Performance table under nominal operating conditions (Vdd = Vsd 2.7V, Idd = 6mA, R2 = 3.9 kOhm) Symbol Parameter and Test Condition Units Min. Typ. Max. G Gain dB 16.5 18.2 - NF Noise Figure dB - 0.95 1.25 IP1dB IIP3[2] Input 1dB Compressed Power Input 3rd Order Intercept Point (2-tone @ Fc +/- 2.5MHz) dBm dBm - -8 - +2 - S11 Input Return Loss dB - -9 - S22 Output Return Loss dB - -14 - S12 Reverse Isolation dB - Cell Band Rejection Relative to 1.575GHz @ 827.5MHz dBc 50 PCS Band Rejection Relative to 1.575GHz @ 1885MHz dBc 50 IP1dB1885MHz Input 1dB gain compression interferer signal level at 1885MHz dBm IP1dB890MHz Input 1dB gain compression interferer signal level at 890MHz dBm Idd Supply DC current at Shutdown (SD) voltage Vsd=2.7V mA - Ish Shutdown Current @ VSD = 0V uA - -27 - 69 - 67 - -8.0 +1.0 6 11.5 0.5 - 2 Table 1b. Performance table at low voltage operation (Vdd = Vsd 1.8V, Idd = 4mA, R2 = 3.9 kOhm) Symbol Parameter and Test Condition Units Typ. G Gain dB 16.1 NF Noise Figure dB 1.05 IP1dB Input 1dB Compressed Power dBm -8.5 IIP3[8] Input 3rd Order Intercept Point (2-tone @ Fc +/- 2.5MHz) dBm 0 S11 Input Return Loss dB -7.2 S22 Output Return Loss dB -14.5 S12 Reverse Isolation dB -28 Cell Band Rejection Relative to 1.575GHz @ 827.5MHz dBc 68 PCS Band Rejection Relative to 1.575GHz @ 1885MHz dBc 67 IP1dB1885MHz IP1dB890MHz Idd Input 1dB gain compression interferer signal level at 1885MHz Input 1dB gain compression interferer signal level at 890MHz Supply DC current at Shutdown (SD) voltage Vsd=1.8V dBm -5.0 dBm 0 mA 4 Ish Shutdown Current @ VSD = 0V uA 0.5 Notes: 7. Measurements at 1.575GHz obtained using demo board described in Figures 6 and 7 8. 1.575GHz IIP3 test condition: FRF1 = 1572.5 MHz, FRF2 = 1577.5 MHz with input power of -20dBm per tone.


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