Document
ALM-1612 GPS LNA-Filter Front-End Module
Data Sheet
Description
Avago Technologies’ ALM-1612 is a GPS front-end module that combines a low-noise amplifier (LNA) with a GPS FBAR filter. The LNA uses Avago Technologies’ proprietary GaAs Enhancement-mode pHEMT process to achieve high gain with very low noise figure and high linearity. Noise figure distribution is very tightly controlled. A CMOS-compatible shutdown pin is included either for turning the LNA on/off, or for current adjustment. The integrated filter utilizes an Avago Technologies’ leading-edge FBAR filter for exceptional rejection at Cell/PCS-Band frequencies.
The low noise figure and high gain, coupled with low current consumption make it suitable for use in critical lowpower GPS applications or during low-battery situations.
Component Image
Surface Mount 3.3x2.1x1 mm3 12-lead MCOB
Gnd (10) Gnd (11) Vdd (12)
Vdd (12) Gnd (11) Gnd (10)
SD (1) Gnd (2) RFin (3)
1612 WWYY
Gnd (9) RFOut (8) Gnd (7)
Gnd (9) RFOut (8)
Gnd (7)
SD (1) Gnd (2) RFin (3)
Gnd (6) Gnd (5) Gnd (4)
Gnd (4) Gnd (5) Gnd (6)
TOP VIEW
BOTTOM VIEW
Note: Package marking provides orientation and identification “1612” = Product Code “YY” = Year of manufacture “WW” = Work week of manufacture
Features
Very Low Noise Figure: 0.95 dB typ. High Gain: 18.2 dB typ. High IIP3 and IP1dB Exceptional Cell/PCS-Band rejection Advanced GaAs E-pHEMT & FBAR Technology Low external component count Shutdown current: < 5 uA CMOS compatible shutdown pin (SD) current @ 2.7 V:
0.1mA ESD: For RFin (Pin 3): ESD Human Body Model > 3kV;
All other pins: ESD Machine Model = 70V, ESD Human Body Model = 300V Meets MSL3 Useable down to 1.8V supply Adjustable current via single external resistor/voltage Small package dimension: 3.3(L)x2.1(W)x1(H) mm3
Specifications (Typical performance @ 25°C)
At 1.575GHz, Vdd = 2.7V, Idd = 6.0mA
Gain = 18.2 dB NF = 0.95 dB IIP3 = +2 dBm, IP1dB = -8 dBm S11 = -9 dB, S22 = -14 dB Cell-Band Rejection: 69 dBc PCS-Band Rejection: 67 dBc
Application Circuit
+Vdd = 2.7V
Application
GPS Receiver Front-end Module
Vbias
Rbias
RFin
RFout
LNA
GPS
Filter
Absolute Maximum Rating[1] TA = 25°C
Symbol Vdd Idd Pin,max
Pdiss TL Tj TSTG
Parameter
Units
Device Drain to Source Voltage[2] V
Drain Current[2]
mA
CW RF Input Power
dBm
(Vdd = 2.7V, Idd = 6mA)
Total Power Dissipation[4]
mW
Operating Temperature
°C
Junction Temperature
°C
Storage Temperature
°C
Absolute Max. 3.6 15 13
54 -40 to 85 150 -65 to 150
Thermal Resistance[3] (Vdd = 2.7 V, Idd = 6mA), Θjc = 133.3°C/W
Notes: 1. Operation of this device in excess of any of
these limits may cause permanent damage. 2. Assuming DC quiescent conditions. 3. Thermal resistance measured using Infra-Red
measurement technique. 4. Board (module belly) temperature TB is 25°C.
Derate 7.5 mW/°C for Tb > 142°C.
Electrical Specifications
TA = 25°C, DC bias for RF parameters is as specified below. Freq=1.575GHz – Typical Performance[7] Table 1a. Performance table under nominal operating conditions (Vdd = Vsd 2.7V, Idd = 6mA, R2 = 3.9 kOhm)
Symbol
Parameter and Test Condition
Units Min. Typ. Max.
G
Gain
dB
16.5
18.2
-
NF
Noise Figure
dB
-
0.95
1.25
IP1dB IIP3[2]
Input 1dB Compressed Power
Input 3rd Order Intercept Point (2-tone @ Fc +/- 2.5MHz)
dBm dBm -
-8
-
+2
-
S11
Input Return Loss
dB
-
-9
-
S22
Output Return Loss
dB
-
-14
-
S12
Reverse Isolation
dB
-
Cell Band Rejection Relative to 1.575GHz @ 827.5MHz
dBc
50
PCS Band Rejection Relative to 1.575GHz @ 1885MHz
dBc
50
IP1dB1885MHz
Input 1dB gain compression interferer signal level at 1885MHz dBm
IP1dB890MHz
Input 1dB gain compression interferer signal level at 890MHz dBm
Idd
Supply DC current at Shutdown (SD) voltage Vsd=2.7V
mA
-
Ish
Shutdown Current @ VSD = 0V
uA
-
-27
-
69
-
67
-
-8.0
+1.0
6
11.5
0.5
-
2
Table 1b. Performance table at low voltage operation (Vdd = Vsd 1.8V, Idd = 4mA, R2 = 3.9 kOhm)
Symbol
Parameter and Test Condition
Units
Typ.
G
Gain
dB
16.1
NF
Noise Figure
dB
1.05
IP1dB
Input 1dB Compressed Power
dBm
-8.5
IIP3[8]
Input 3rd Order Intercept Point (2-tone @ Fc +/- 2.5MHz)
dBm
0
S11
Input Return Loss
dB
-7.2
S22
Output Return Loss
dB
-14.5
S12
Reverse Isolation
dB
-28
Cell Band Rejection
Relative to 1.575GHz @ 827.5MHz
dBc
68
PCS Band Rejection Relative to 1.575GHz @ 1885MHz
dBc
67
IP1dB1885MHz IP1dB890MHz Idd
Input 1dB gain compression interferer signal level at 1885MHz Input 1dB gain compression interferer signal level at 890MHz Supply DC current at Shutdown (SD) voltage Vsd=1.8V
dBm
-5.0
dBm
0
mA
4
Ish
Shutdown Current @ VSD = 0V
uA
0.5
Notes: 7. Measurements at 1.575GHz obtained using demo board described in Figures 6 and 7 8. 1.575GHz IIP3 test condition: FRF1 = 1572.5 MHz, FRF2 = 1577.5 MHz with input power of -20dBm per tone.