Ordering number : ENN6653A
2SC5683
NPN Triple Diffused Planar Silicon Transistor
2SC5683
Ultrahigh-Definition CRT Disp...
Ordering number : ENN6653A
2SC5683
NPN Triple Diffused Planar Silicon
Transistor
2SC5683
Ultrahigh-Definition CRT Display Horizontal Deflection Output Applications
Features
Package Dimensions
unit : mm 2174A
[2SC5683]
16.0
5.0
High speed. High breakdown voltage(VCBO=1500V). High reliability(Adoption of HVP process). Adoption of MBIT process.
3.4
5.6 3.1
8.0 22.0
21.0 4.0
2.8 2.0
20.4
0.7
0.9
1
2
5.45
3
1 : Base 2 : Collector 3 : Emitter SANYO : TO-3PMLH
Ratings 1500 800 5 25 50 3.0 Unit V V V A A W W °C °C
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Symbol VCBO VCEO VEBO IC ICP PC Tj Tstg Tc=25°C Conditions
5.45
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Junction Temperature Storage Temperature
Collector Dissipation
3.5
0.8
2.1
100 150 --55 to +150
Electrical Characteristics at Ta=25°C
Parameter Collector Cutoff Current Collector Cutoff Current Collector Sustain Voltage Emitter Cutoff Current Symbol ICBO ICES VCEO(sus) IEBO Conditions VCB=800V, IE=0 VCE=1500V, RBE=0 IC=100mA, IB=0 VEB=4V, IC=0 800 1.0 Ratings min typ max 10 1.0 Unit µA mA V mA
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Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be r...
