C5683 2SC5683 Datasheet

C5683 Datasheet PDF, Equivalent


Part Number

C5683

Description

2SC5683

Manufacture

Sanyo Semicon Device

Total Page 4 Pages
Datasheet
Download C5683 Datasheet


C5683
Ordering number : ENN6653A
2SC5683
NPN Triple Diffused Planar Silicon Transistor
2SC5683
Ultrahigh-Definition CRT Display
Horizontal Deflection Output Applications
Features
High speed.
High breakdown voltage(VCBO=1500V).
High reliability(Adoption of HVP process).
Adoption of MBIT process.
Package Dimensions
unit : mm
2174A
[2SC5683]
16.0 3.4
5.6
3.1
2.8
2.0 2.1
0.7 0.9
Specifications
Absolute Maximum Ratings at Ta=25°C
12 3
5.45
5.45
1 : Base
2 : Collector
3 : Emitter
SANYO : TO-3PMLH
Parameter
Collector-to-Base Voltage
Collector-to-Emitter Voltage
Emitter-to-Base Voltage
Collector Current
Collector Current (Pulse)
Symbol
VCBO
VCEO
VEBO
IC
ICP
Collector Dissipation
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Junction Temperature
Storage Temperature
PC
Tj
Tstg
Electrical Characteristics at Ta=25°C
Tc=25°C
Conditions
Ratings
1500
800
5
25
50
3.0
100
150
--55 to +150
Unit
V
V
V
A
A
W
W
°C
°C
Parameter
Collector Cutoff Current
Collector Cutoff Current
Collector Sustain Voltage
Emitter Cutoff Current
Symbol
Conditions
ICBO
ICES
VCEO(sus)
IEBO
VCB=800V, IE=0
VCE=1500V, RBE=0
IC=100mA, IB=0
VEB=4V, IC=0
min
800
Ratings
typ
max
Unit
10 µA
1.0 mA
V
1.0 mA
Continued on next page.
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft's
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
42501 TS IM TA-3147 / 80100 TS IM TA-2892 No.6653-1/4

C5683
Continued from preceding page.
Parameter
DC Current Gain
Collector-to-Emitter Saturation Voltage
Base-to-Emitter Saturation Voltage
Storage Time
Fall Time
2SC5683
Symbol
hFE1
hFE2
VCE(sat)
VBE(sat)
tstg
tf
Conditions
VCE=5V, IC=1A
VCE=5V, IC=20A
IC=18A, IB=4.5A
IC=18A, IB=4.5A
IC=12A, IB1=2.4A, IB2=--4.8A
IC=12A, IB1=2.4A, IB2=--4.8A
Switching Time Test Circuit
PW=20µs
D.C.1%
IB1
IB2
INPUT
50
VR
RB
+
100µF
VBE= --2V
OUTPUT
RL=16.7
+
470µF
VCC=200V
min
15
4
Ratings
typ
max
7
3
1.5
3.0
0.2
Unit
V
V
µs
µs
IC -- VCE
40
35 10.0A 9.0A 8.0A 7.0A
30
25
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20
15
10
6.0A
5.0A
4.0A
3.0A
2.0A
1.0A
0.5A
5
0
0
100
7
5
IB=0
1 2 3 4 5 6 7 8 9 10
Collector-to-Emitter Voltage, VCE -- V IT02409
hFE -- IC
VCE=5V
3 Ta=120°C
2 25°C
--40°C
10
7
5
3
2
1.0
0.1
2 3 5 7 1.0
2 3 5 7 10
23
Collector Current, IC -- A
IT02411
IC -- VBE
12
VCE=5V
10
8
6
4
2
0
0 0.2 0.4 0.6 0.8 1.0 1.2
Base-to-Emitter Voltage, VBE -- V
VCE(sat) -- IC
2
IC / IB=5
10
IT02410
7
5
3
2
1.0
7
5
3
2 25°C
0.1 Ta= --40°C
7
5 120°C
3
0.1 2 3 5 7 1.0 2 3 5 7 10
Collector Current, IC -- A
23
IT02412
No.6653-2/4


Features Ordering number : ENN6653A 2SC5683 NPN Triple Diffused Planar Silicon Transist or 2SC5683 Ultrahigh-Definition CRT Di splay Horizontal Deflection Output Appl ications Features • • • • Pack age Dimensions unit : mm 2174A [2SC5683 ] 16.0 5.0 High speed. High breakdown voltage(VCBO=1500V). High reliability(A doption of HVP process). Adoption of MB IT process. 3.4 5.6 3.1 8.0 22.0 21. 0 4.0 2.8 2.0 20.4 0.7 0.9 1 2 5.4 5 3 1 : Base 2 : Collector 3 : Emitte r SANYO : TO-3PMLH Ratings 1500 800 5 2 5 50 3.0 Unit V V V A A W W °C °C Sp ecifications Absolute Maximum Ratings a t Ta=25°C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Em itter-to-Base Voltage Collector Current Collector Current (Pulse) Symbol VCBO VCEO VEBO IC ICP PC Tj Tstg Tc=25°C Co nditions 5.45 www.DataSheet4U.com Jun ction Temperature Storage Temperature Collector Dissipation 3.5 0.8 2.1 1 00 150 --55 to +150 Electrical Charact eristics at Ta=25°C Parameter Collector Cutoff Current Collector Cutoff Cur.
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