UPD4616112

DATA SHEET MOS INTEGRATED CIRCUIT µPD4616112 16M-BIT CMOS MOBILE SPECIFIED RAM 1M-WORD BY 16-BIT Description The µPD4616112 is a high speed, low power, 16,777,216 bits (1,048,576 words by 16 bits) CMOS mobile specified RAM featuring low power static RAM compatible function and pin configuration. The µPD4616112 is fabricated with advanced CMOS technology using one-transistor memory cell. The µPD4616112 is packed in 48-pin TAPE FBGA. Features 1,048,576 words by 16 bits organization 5 Fast access time: 80, 90 ns (MAX.) Byte data control: /LB (I/O0 - I/O7), /UB (I/O8 - I/O15) Low voltage operation: VCC = 2.6 to 3.0 V Operating ambient temperature: TA = –20 to +70 °C Output Enable input for easy application Chip Enable input: /CS pin Standby Mode input: MODE pin Standby Mode1: Normal standby (Memory cell data hold valid) Standby Mode2: Memory cell data hold invalid www.DataSheet4U.com Product name Access time ns (MAX.) Operating supply Operating ambient Voltage temperature °C Supply current At operating mA (MAX.) 35 At standby µA (MAX.) 100 / 10 5 µPD4616112-BCxx 80, 90 2.6 to 3.0 –20 to +70 The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version. Not all devices/types available in every country. Please check with local NEC representative for availability and additional information. Document No. M15085EJ5V0DS00 (5th edition) Date Published October 2001 NS ...