UPD4616112-X

DATA SHEET MOS INTEGRATED CIRCUIT µPD4616112-X 16M-BIT CMOS MOBILE SPECIFIED RAM 1M-WORD BY 16-BIT EXTENDED TEMPERATURE OPERATION Description The µPD4616112-X is a high speed, low power, 16,777,216 bits (1,048,576 words by 16 bits) CMOS mobile specified RAM featuring low power static RAM compatible function and pin configuration. The µPD4616112-X is fabricated with advanced CMOS technology using one-transistor memory cell. The µPD4616112-X is packed in 48-pin TAPE FBGA. Features 1,048,576 words by 16 bits organization Fast access time: 85, 95 ns (MAX.) Byte data control: /LB (I/O0 - I/O7), /UB (I/O8 - I/O15) Low voltage operation: VCC = 2.6 to 3.1 V Operating ambient temperature: TA = –25 to +85 °C Output Enable input for easy application Chip Enable input: /CS pin Standby Mode input: MODE pin Standby Mode1: Normal standby (Memory cell data hold valid) Standby Mode2: Memory cell data hold invalid www.DataSheet4U.com Product name Access time ns (MAX.) Operating supply Voltage Operating ambient temperature °C Supply current At operating mA (MAX.) 35 At standby µA (MAX.) 70 / 10 µPD4616112-BxxLX 85, 95 2.6 to 3.1 –25 to +85 The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version. Not all devices/types available in every country. Please check with local NEC representative for availability and additional information. Document No. M15794EJ2V0DS00 (2nd editio...