D1802 2SD1802 Datasheet

D1802 Datasheet, PDF, Equivalent


Part Number

D1802

Description

2SD1802

Manufacture

Sanyo Semiconductor Corporation

Total Page 5 Pages
Datasheet
Download D1802 Datasheet


D1802
Ordering number:EN2113B
PNP/NPN Epitaxial Planar Silicon Transistors
2SB1202/2SD1802
High-Current Switching Applications
Applications
· Voltage regulators, relay drivers, lamp drivers,
electrical equipment.
Features
· Adoption of FBET, MBIT processes.
· Large currrent capacity and wide ASO.
· Low collector-to-emitter saturation voltage.
· Fast switching speed.
· Small and slim package making it easy to make
2SB1202/2SD1802-used sets smaller.
Package Dimensions
unit:mm
2045B
[2SB1202/2SD1802]
unit:mm
2044B
1 : Base
2 : Collector
3 : Emitter
4 : Collector
SANYO : TP
[2SB1202/2SD1802]
www.DataSheet4U.com
1 : Base
2 : Collector
3 : Emitter
4 : Collector
SANYO : TP-FA
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft’s
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquaters
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
92098HA (KT)/8259MO/4137KI/4116KI, TS No.2113–1/5

D1802
2SB1202/2SD1802
( ) : 2SB1202
Specifications
Absolute Maximum Ratings at Ta = 25˚C
Parameter
Collector-to-Base Voltage
Collector-to-Emitter Voltage
Emitter-to-Base Voltage
Collector Current
Collector Current (Pulse)
Collector Dissipation
Symbol
VCBO
VCEO
VEBO
IC
ICP
PC
Junction Temperature
Storage Temperature
Tj
Tstg
Electrical Characteristics at Ta = 25˚C
Tc=25˚C
Conditions
Parameter
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
Gain-Bandwidth Product
Output Capacitance
Collector-to-Emitter Saturation Voltage
Symbol
Conditions
ICBO
IEBO
hFE1
hFE2
fT
Cob
VCE(sat)
VCB=(–)40V, IE=0
VEB=(–)4V, IC=0
VCE=(–)2V, IC=(–)100mA
VCE=(–)2V, IC=(–)3A
VCE=(–)10V, IC=(–)50mA
VCB=(–)10V, f=1MHz
IC=(–)2A, IB=(–)100mA
Base-to-Emitter Saturation Voltage
Collector-to-Base Breakdown Voltage
Collector-to-Emitter Breakdown Voltage
Emitter-to-Base Breakdown Voltage
Turn-ON Time
Storage Time
VBE(sat)
V(BR)CBO
V(BR)CEO
V(BR)EBO
ton
tstg
IC=(–)2A, IB=(–)100mA
IC=(–)10µA, IE=0
IC=(–)1mA, RBE=
IE=(–)10µA, IC=0
See specified Test Circuit
See specified Test Circuit
Fall Time
tf See specified Test Circuit
* : The 2SB1202/2SD1802 are classified by 100mA hFE as follows :
100 R 200 140 S 280 200 T 400 280 U 560
www.DataSheet4U.com
Switching Time Test Circuit
Ratings
(–)60
(–)50
(–)6
(–)3
(–)6
1
15
150
–55 to +150
Unit
V
V
V
A
A
W
W
˚C
˚C
Ratings
min typ
100*
35
150
(39)25
0.19
(–0.35)
(–)0.94
(–)60
(–)50
(–)6
70
(450)
650
35
max
(–)1
(–)1
560*
0.5
(–0.7)
(–)1.2
Unit
µA
µA
MHz
pF
V
V
V
V
V
V
ns
ns
ns
ns
No.2113–2/5


Features Ordering number:EN2113B PNP/NPN Epitaxi al Planar Silicon Transistors 2SB1202/ 2SD1802 High-Current Switching Applicat ions Applications · Voltage regulators , relay drivers, lamp drivers, electric al equipment. Package Dimensions unit: mm 2045B [2SB1202/2SD1802] Features · Adoption of FBET, MBIT processes. · L arge currrent capacity and wide ASO. · Low collector-to-emitter saturation vo ltage. · Fast switching speed. · Smal l and slim package making it easy to ma ke 2SB1202/2SD1802-used sets smaller. 1 : Base 2 : Collector 3 : Emitter 4 : C ollector SANYO : TP unit:mm 2044B [2SB 1202/2SD1802] www.DataSheet4U.com 1 : Base 2 : Collector 3 : Emitter 4 : Coll ector SANYO : TP-FA Any and all SANYO products described or contained herein do not have specifications that can han dle applications that require extremely high levels of reliability, such as li fe-support systems, aircraft’s contro l systems, or other applications whose failure can be reasonably expected to result in serious physical and/or.
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