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D5703 Dataheets PDF



Part Number D5703
Manufacturers Inchange Semiconductor Company
Logo Inchange Semiconductor Company
Description 2SD5703
Datasheet D5703 DatasheetD5703 Datasheet (PDF)

www.DataSheet4U.com INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SD5703 DESCRIPTION ·High Breakdown Voltage:VCBO= 1500V (Min) ·High Switching Speed ·Low Saturation Voltage APPLICATIONS ·Designed for color TV horizontal output applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VCBO Collector-Base Voltage VCEO Collector-Emitter Voltage VEBO Emitter-Base Voltage www.DataSheet4U.com w w s c s i . w VALUE UNIT 1500 V 800 V 6 V 10 A 30 .

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www.DataSheet4U.com INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SD5703 DESCRIPTION ·High Breakdown Voltage:VCBO= 1500V (Min) ·High Switching Speed ·Low Saturation Voltage APPLICATIONS ·Designed for color TV horizontal output applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VCBO Collector-Base Voltage VCEO Collector-Emitter Voltage VEBO Emitter-Base Voltage www.DataSheet4U.com w w s c s i . w VALUE UNIT 1500 V 800 V 6 V 10 A 30 A 70 W n c . i m e IC Collector Current- Continuous IC Collector Current- Pulse Collector Power Dissipation @ TC=25℃ PC TJ Junction Temperature 150 ℃ Tstg Storage Temperature Range -55~150 ℃ isc Website:www.iscsemi.cn www.DataSheet4U.com INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN 2SD5703 TYP. MAX UNIT VCE(sat) Collector-Emitter Saturation Voltage IC= 8A; IB= 1.6A B 5.0 V VBE(sat) Base-Emitter Saturation Voltage IC= 8A; IB= 1.6A B 1.5 V ICES Collector Cutoff Current VCE= 1400V; VBE= 0 1 mA ICBO Collector Cutoff Current VCB= 800V; IE= 0 10 μA ICBO Collector Cutoff Current VEB= 4V; IC= 0 hFE-1 DC Current Gain IC= 1A; VCE= 5V hFE-2 DC Current Gain tf Fall Time www.DataSheet4U.com w w w. IC= 8A; VCE= 5V IC= 6A, IB1= 1.2A; IB2= -2.4A; VCC= 200V; RL= 33.3Ω m e s isc n c . i 15 5.3 1 mA 40 7.3 0.3 μs isc Website:www.iscsemi.cn 2 .


D1802 D5703 SOT262A1


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