D5703 2SD5703 Datasheet

D5703 Datasheet PDF, Equivalent


Part Number

D5703

Description

2SD5703

Manufacture

Inchange Semiconductor Company

Total Page 2 Pages
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D5703
INCHANGE Semiconductor
www.DataSheet4U.com
isc Silicon NPN Power Transistor
isc Product Specification
2SD5703
DESCRIPTION
·High Breakdown Voltage-
VCBO= 1500V (Min)
·High Switching Speed
·Low Saturation Voltage
APPLICATIONS
·Designed for color TV horizontal output applications
ABSOLUTE MAXIMUM RATINGS(Ta=25)
i.cnSYMBOL
PARAMETER
VALUE
UNIT
.iscsemVCBO
Collector-Base Voltage
1500
V
wwwVCEO
Collector-Emitter Voltage
800 V
VEBO
Emitter-Base Voltage
www.DataSheet4U.com
6V
IC Collector Current- Continuous
10
A
IC Collector Current- Pulse
Collector Power Dissipation
PC @ TC=25
TJ Junction Temperature
30 A
70 W
150
Tstg Storage Temperature Range
-55~150
isc Websitewww.iscsemi.cn

D5703
INCHANGE Semiconductor
www.DataSheet4U.com
isc Silicon NPN Power Transistor
isc Product Specification
2SD5703
ELECTRICAL CHARACTERISTICS
TC=25unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN TYP. MAX UNIT
VCE(sat) Collector-Emitter Saturation Voltage IC= 8A; IB=B 1.6A
VBE(sat) Base-Emitter Saturation Voltage
IC= 8A; IB=B 1.6A
ICES Collector Cutoff Current
VCE= 1400V; VBE= 0
ICBO Collector Cutoff Current
VCB= 800V; IE= 0
5.0 V
1.5 V
1 mA
10 μA
ICBO Collector Cutoff Current
VEB= 4V; IC= 0
hFE-1
DC Current Gain
i.cnhFE-2
DC Current Gain
www.iscsemtf FallTime
IC= 1A; VCE= 5V
IC= 8A; VCE= 5V
IC= 6A, IB1= 1.2A; IB2= -2.4A;
VCC= 200V; RL= 33.3Ω
15
5.3
www.DataSheet4U.com
1 mA
40
7.3
0.3 μs
isc Websitewww.iscsemi.cn
2


Features www.DataSheet4U.com INCHANGE Semiconduc tor isc Product Specification isc Sil icon NPN Power Transistor 2SD5703 DES CRIPTION ·High Breakdown Voltage:VCB O= 1500V (Min) ·High Switching Speed Low Saturation Voltage APPLICATIONS Designed for color TV horizontal outpu t applications ABSOLUTE MAXIMUM RATING S(Ta=25℃) SYMBOL PARAMETER VCBO Col lector-Base Voltage VCEO Collector-Em itter Voltage VEBO Emitter-Base Volta ge www.DataSheet4U.com w w s c s i . w VALUE UNIT 1500 V 800 V 6 V 10 A 30 A 70 W n c . i m e IC Collector Curr ent- Continuous IC Collector Current- Pulse Collector Power Dissipation @ TC =25℃ PC TJ Junction Temperature 1 50 ℃ Tstg Storage Temperature Rang e -55~150 ℃ isc Website:www.iscs emi.cn www.DataSheet4U.com INCHANGE S emiconductor isc Product Specification isc Silicon NPN Power Transistor ELEC TRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CO NDITIONS MIN 2SD5703 TYP. MAX UNIT VCE(sat) Collector-Emitter Saturation Vo.
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