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INCHANGE Semiconductor
isc Product Specification
isc Silicon NPN Power Transistor
2SD5703
DESCRIPTION ·High Breakdown Voltage:VCBO= 1500V (Min) ·High Switching Speed ·Low Saturation Voltage
APPLICATIONS ·Designed for color TV horizontal output applications
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL PARAMETER
VCBO
Collector-Base Voltage
VCEO
Collector-Emitter Voltage
VEBO
Emitter-Base Voltage
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VALUE UNIT 1500 V 800 V 6 V 10 A 30 A 70 W
n c . i m e
IC
Collector Current- Continuous
IC
Collector Current- Pulse Collector Power Dissipation @ TC=25℃
PC
TJ
Junction Temperature
150
℃
Tstg
Storage Temperature Range
-55~150
℃
isc Website:www.iscsemi.cn
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INCHANGE Semiconductor
isc Product Specification
isc Silicon NPN Power Transistor
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN
2SD5703
TYP.
MAX
UNIT
VCE(sat)
Collector-Emitter Saturation Voltage
IC= 8A; IB= 1.6A
B
5.0
V
VBE(sat)
Base-Emitter Saturation Voltage
IC= 8A; IB= 1.6A
B
1.5
V
ICES
Collector Cutoff Current
VCE= 1400V; VBE= 0
1
mA
ICBO
Collector Cutoff Current
VCB= 800V; IE= 0
10
μA
ICBO
Collector Cutoff Current
VEB= 4V; IC= 0
hFE-1
DC Current Gain
IC= 1A; VCE= 5V
hFE-2
DC Current Gain
tf
Fall Time
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w.
IC= 8A; VCE= 5V
IC= 6A, IB1= 1.2A; IB2= -2.4A; VCC= 200V; RL= 33.3Ω
m e s isc
n c . i
15 5.3
1
mA
40
7.3
0.3
μs
isc Website:www.iscsemi.cn
2
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