Power Transistors
2SD2544
Silicon NPN triple diffusion planar type
For power amplification with high forward current tr...
Power
Transistors
2SD2544
Silicon
NPN triple diffusion planar type
For power amplification with high forward current transfer ratio
Unit: mm
s Features
13.0±0.2 4.2±0.2
5.0±0.1 10.0±0.2 1.0
q q q
2.5±0.2
High foward current transfer ratio hFE Satisfactory linearity of foward current transfer ratio hFE Allowing supply with the radial taping (TC=25˚C)
Ratings 60 60 7 8 4 15 2 150 –55 to +150 Unit V V V A A W ˚C ˚C
90°
1.2±0.1
18.0±0.5 Solder Dip
s Absolute Maximum Ratings
Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Collector power TC=25°C dissipation Ta=25°C Junction temperature Storage temperature Symbol VCBO VCEO VEBO ICP IC PC Tj Tstg
C1.0 2.25±0.2
0.35±0.1
0.65±0.1 1.05±0.1 0.55±0.1
0.55±0.1
C1.0
1 2 3
2.5±0.2
2.5±0.2
1:Base 2:Collector 3:Emitter MT4 Type Package
s Electrical Characteristics
Parameter Collector cutoff current www.DataSheet4U.com Emitter cutoff current Collector to emitter voltage Forward current transfer ratio Collector to emitter saturation voltage Base to emitter saturation voltage Transition frequency Turn-on time Storage time Fall time
*h
(TC=25˚C)
Symbol ICBO IEBO VCEO hFE1 hFE2 VCE(sat) VBE(sat) fT ton tstg tf
*
Conditions VCB = 60V, IE = 0 VEB = 7V, IC = 0 IC = 10mA, IB = 0 VCE = 2V, IC = 0.8A VCE = 2V, IC = 2A IC = 2A, IB = 50mA IC = 2A, IB = 50mA VCE = 10V, IC = 0.5A, f = 10MHz IC = 2A, IB1 = 50mA, IB2 = –50mA, VCC = 50V
min
typ
max 10 10
...
