D2544 2SD2544 Datasheet

D2544 Datasheet PDF, Equivalent


Part Number

D2544

Description

2SD2544

Manufacture

Panasonic Semiconductor

Total Page 3 Pages
Datasheet
Download D2544 Datasheet


D2544
Power Transistors
2SD2544
Silicon NPN triple diffusion planar type
For power amplification with high forward current transfer ratio
Unit: mm
s Features
q High foward current transfer ratio hFE
q Satisfactory linearity of foward current transfer ratio hFE
q Allowing supply with the radial taping
s Absolute Maximum Ratings (TC=25˚C)
Parameter
Symbol
Ratings
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Peak collector current
Collector current
Collector power TC=25°C
dissipation
Ta=25°C
VCBO
VCEO
VEBO
ICP
IC
PC
60
60
7
8
4
15
2
Junction temperature
Storage temperature
Tj 150
Tstg –55 to +150
Unit
V
V
V
A
A
W
˚C
˚C
10.0±0.2
5.0±0.1
1.0
90°
0.35±0.1
1.2±0.1
0.65±0.1
1.05±0.1
0.55±0.1
C1.0
2.25±0.2
0.55±0.1
C1.0 1 2 3
2.5±0.2
2.5±0.2
1:Base
2:Collector
3:Emitter
MT4 Type Package
s Electrical Characteristics (TC=25˚C)
Parameter
Symbol
Conditions
Collector cutoff current
www.DEamtaitStehreceutt4oUff .ccuormrent
Collector to emitter voltage
Forward current transfer ratio
Collector to emitter saturation voltage
Base to emitter saturation voltage
Transition frequency
Turn-on time
Storage time
Fall time
ICBO
IEBO
VCEO
hFE1*
hFE2
VCE(sat)
VBE(sat)
fT
ton
tstg
tf
VCB = 60V, IE = 0
VEB = 7V, IC = 0
IC = 10mA, IB = 0
VCE = 2V, IC = 0.8A
VCE = 2V, IC = 2A
IC = 2A, IB = 50mA
IC = 2A, IB = 50mA
VCE = 10V, IC = 0.5A, f = 10MHz
IC = 2A, IB1 = 50mA, IB2 = –50mA,
VCC = 50V
min typ max Unit
10 µA
10 µA
60 V
500 1000 2000
60
0.5 V
1.5 V
70 MHz
0.5 µs
3.6 µs
1.1 µs
*hFE1 Rank classification
Rank
Q
P
hFE1 500 to 1200 800 to 2000
1

D2544
Power Transistors
PC — Ta
20
(1) TC=Ta
(2) Without heat sink
(PC=2.0W)
15
(1)
10
5
(2)
0
0 20 40 60 80 100 120 140 160
Ambient temperature Ta (˚C)
VCE(sat) — IC
10
IC/IB=20
3
TC=100˚C
1
0.3
0.1
25˚C
–25˚C
0.03
0.01
0.01 0.03 0.1 0.3 1 3
Collector current IC (A)
10
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Cob — VCB
1000
300
IE=0
f=1MHz
TC=25˚C
100
30
10
3
1
13
10 30 100
Collector to base voltage VCB (V)
IC — VCE
8
IB=100mA TC=25˚C
7
50mA
6
20mA
5
10mA
4
6mA
3
4mA
2
2mA
1
0
0 2 4 6 8 10 12
Collector to emitter voltage VCE (V)
2SD2544
VBE(sat) — IC
10
IC/IB=20
3
1 TC=–25˚C
100˚C
0.3 25˚C
0.1
0.03
0.01
0.1
0.3 1 3
Collector current IC (A)
10
hFE — IC
10
VCE=5V
3
TC=100˚C
1
–25˚C
0.3
25˚C
0.1
0.03
0.01
0.003
0.001
0.01 0.03 0.1 0.3 1 3
Collector current IC (A)
10
1000
300
100
fT — IC
VCE=10V
f=10MHz
TC=25˚C
30
10
3
1
0.01 0.03 0.1 0.3 1 3
Collector current IC (A)
10
Area of safe operation (ASO)
100
Non repetitive pulse
TC=25˚C
30
10 ICP
IC
3
1
0.3
DC
10ms
t=1ms
0.1
0.03
0.01
1 3 10 30 100 300 1000
Collector to emitter voltage VCE (V)
2


Features Power Transistors 2SD2544 Silicon NPN t riple diffusion planar type For power a mplification with high forward current transfer ratio Unit: mm s Features 13. 0±0.2 4.2±0.2 5.0±0.1 10.0±0.2 1.0 q q q 2.5±0.2 High foward current transfer ratio hFE Satisfactory lineari ty of foward current transfer ratio hFE Allowing supply with the radial taping (TC=25˚C) Ratings 60 60 7 8 4 15 2 15 0 –55 to +150 Unit V V V A A W ˚C ˚ C 90° 1.2±0.1 18.0±0.5 Solder Dip s Absolute Maximum Ratings Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector curre nt Collector power TC=25°C dissipation Ta=25°C Junction temperature Storage temperature Symbol VCBO VCEO VEBO ICP I C PC Tj Tstg C1.0 2.25±0.2 0.35±0.1 0.65±0.1 1.05±0.1 0.55±0.1 0.55± 0.1 C1.0 1 2 3 2.5±0.2 2.5±0.2 1 :Base 2:Collector 3:Emitter MT4 Type Pa ckage s Electrical Characteristics Par ameter Collector cutoff current www.DataSheet4U.com Emitter cutoff current Collector t.
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