2N6109 Transistors Datasheet

2N6109 Datasheet PDF, Equivalent


Part Number

2N6109

Description

(2N6107 - 2N6111) Silicon PNP Power Transistors

Manufacture

Savantic

Total Page 3 Pages
Datasheet
Download 2N6109 Datasheet


2N6109
SavantIC Semiconductor
Silicon PNP Power Transistors
Product Specification
2N6107 2N6109 2N6111
DESCRIPTION
·With TO-220 package
·Complement to NPN type:
2N6288; 2N6290 ;2N6292
APPLICATIONS
·Power amplifier and switching
circuits applications
PINNING
PIN
1
2
3
DESCRIPTION
Emitter
Collector;connected to
mounting base
Base
Fig.1 simplified outline (TO-220) and symbol
Absolute maximum ratings(Ta=25 )
SYMBOL
PARAMETER
2N6107
VCBO
Collector-base voltage 2N6109
2N6111
2N6107
www.DataShVeCeEt4OU.com Collector-emitter voltage
2N6109
2N6111
VEBO
Emitter-base voltage
IC Collector current
ICM Collector current-peak
IB Base current
PT Total power dissipation
Tj Junction temperature
Tstg Storage temperature
CONDITIONS
Open emitter
Open base
Open collector
TC=25
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-c
Thermal resistance from junction to case
VALUE
-40
-60
-80
-30
-50
-70
-5
-7
-10
-3
40
150
-65~150
UNIT
V
V
V
A
A
A
W
MAX
3.125
UNIT
/W

2N6109
SavantIC Semiconductor
Silicon PNP Power Transistors
Product Specification
2N6107 2N6109 2N6111
CHARACTERISTICS
Tj=25 unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VCEO(SUS)
Collector-emitter
sustaining voltage
2N6107
2N6109 IC=-0.1A ;IB=0
2N6111
VCEsat Collector-emitter saturation voltage IC=-7A;IB=-3A
VBE Base-emitter on voltage
IC=-7A ; VCE=-4V
2N6107 VCE=-20V; IB=0
ICEO Collector cut-off current 2N6109 VCE=-40V; IB=0
ICEX Collector cut-off current
IEBO Emitter cut-off current
www.DataSheet4U.com
2N6111 VCE=-60V; IB=0
2N6107
2N6109
2N6111
VCE=-40V; VBE=-1.5V
VCE=-30V; BE=-1.5V,TC=125
VCE=-60V; VBE=-1.5V
VCE=-50V; BE=-1.5V,TC=125
VCE=-80V; VBE=-1.5V
VCE=-70V; BE=-1.5V,TC=125
VEB=-5V; IC=0
2N6107 IC=-2A ; VCE=-4V
hFE-1
DC current gain
2N6109 IC=-2.5A ; VCE=-4V
2N6111 IC=-3A ; VCE=-4V
hFE-2
DC current gain
IC=-7A ; VCE=-4V
fT Transition frequency
IC=-0.5A ; VCE=-4V;f=1MHz
MIN TYP. MAX UNIT
-30
-50 V
-70
-3.5 V
-3.0 V
-1.0 mA
-0.1
-2.0
-0.1
-2.0
mA
-0.1
-2.0
-1.0 mA
30 150
2.3
10 MHz
2


Features SavantIC Semiconductor Product Specific ation Silicon PNP Power Transistors DE SCRIPTION ·With TO-220 package ·Compl ement to NPN type: 2N6288; 2N6290 ;2N62 92 APPLICATIONS ·Power amplifier and s witching circuits applications PINNING PIN 1 2 3 DESCRIPTION Emitter Collector ;connected to mounting base Base 2N610 7 2N6109 2N6111 Fig.1 simplified outli ne (TO-220) and symbol Absolute maximu m ratings(Ta=25 ) SYMBOL PARAMETER 2N61 07 VCBO Collector-base voltage 2N6109 2 N6111 2N6107 CEO www.DataSheet4U.com C ONDITIONS VALUE -40 UNIT Open emitte r -60 -80 -30 V V Collector-emitter voltage 2N6109 2N6111 Open base -50 -70 V VEBO IC ICM IB PT Tj Tstg Emi tter-base voltage Collector current Col lector current-peak Base current Total power dissipation Junction temperature Storage temperature Open collector -5 -7 -10 -3 V A A A W TC=25 40 150 -6 5~150 THERMAL CHARACTERISTICS SYMBOL R th j-c PARAMETER Thermal resistance fro m junction to case MAX 3.125 UNIT /W SavantIC Semiconductor Prod.
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