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PESD5V0F1BL

NXP Semiconductors

Femtofarad bidirectional ESD protection diode

PESD5V0F1BL Femtofarad bidirectional ESD protection diode Rev. 01 — 1 October 2009 Product data sheet 1. Product profile...


NXP Semiconductors

PESD5V0F1BL

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Description
PESD5V0F1BL Femtofarad bidirectional ESD protection diode Rev. 01 — 1 October 2009 Product data sheet 1. Product profile 1.1 General description Femtofarad bidirectional ElectroStatic Discharge (ESD) protection diode in a leadless ultra small SOD882 Surface-Mounted Device (SMD) plastic package designed to protect one signal line from the damage caused by ESD and other transients. The combination of extremely low capacitance, high ESD maximum rating and ultra small package makes the device ideal for high-speed data line protection and antenna protection applications. 1.2 Features I Bidirectional ESD protection of one line I ESD protection up to 10 kV I Femtofarad capacitance: Cd = 400 fF I IEC 61000-4-2; level 4 (ESD) I Low ESD clamping voltage: 30 V I AEC-Q101 qualified at 30 ns and ± 8 kV I Very low leakage current: IRM < 1 nA 1.3 Applications I I I I www.DataSheet4U.com 10/100/1000 Mbit/s Ethernet FireWire High-speed data lines Subscriber Identity Module (SIM) card protection I Cellular handsets and accessories I I I I Portable electronics Communication systems Computers and peripherals Audio and video equipment I Antenna protection 1.4 Quick reference data Table 1. Symbol Per device VRWM Cd reverse standoff voltage diode capacitance f = 1 MHz; VR = 0 V 0.4 5.5 0.55 V pF Quick reference data Parameter Conditions Min Typ Max Unit NXP Semiconductors PESD5V0F1BL Femtofarad bidirectional ESD protection diode 2. Pinning information Table 2. Pin 1 2 Pinning Description c...




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