PBHV8115T
150 V, 1 A NPN high-voltage low VCEsat (BISS) transistor
Rev. 02 — 9 December 2008 Product data sheet
1. Prod...
PBHV8115T
150 V, 1 A
NPN high-voltage low VCEsat (BISS)
transistor
Rev. 02 — 9 December 2008 Product data sheet
1. Product profile
1.1 General description
NPN high-voltage low VCEsat Breakthrough In Small Signal (BISS)
transistor in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package.
PNP complement: PBHV9115T.
1.2 Features
I I I I I I High voltage Low collector-emitter saturation voltage VCEsat High collector current capability IC and ICM High collector current gain (hFE) at high IC AEC-Q101 qualified Small SMD plastic package
1.3 Applications
I I I I I I
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LED driver for LED chain module LCD backlighting High Intensity Discharge (HID) front lighting Automotive motor management Hook switch for wired telecom Switch Mode Power Supply (SMPS)
1.4 Quick reference data
Table 1. Symbol VCEO IC hFE Quick reference data Parameter collector-emitter voltage collector current DC current gain VCE = 10 V; IC = 50 mA Conditions open base Min 100 Typ 250 Max 150 1 Unit V A
NXP Semiconductors
PBHV8115T
150 V, 1 A
NPN high-voltage low VCEsat (BISS)
transistor
2. Pinning information
Table 2. Pin 1 2 3 Pinning Description base emitter collector
1 2 2
sym021
Simplified outline
3
Graphic symbol
3 1
3. Ordering information
Table 3. Ordering information Package Name PBHV8115T Description plastic surface-mounted package; 3 leads Version SOT23 Type number
4. Marking
Table 4. Marking codes Marking code[1] W6* Type number PBHV8115T
[1] * = -: made in Hong Ko...