Silicon N Channel MOS FET High Speed Power Switching
RJK2055DPA
Silicon N Channel MOS FET High Speed Power Switching
REJ03G1735-0100 Rev.1.00 Sep 16, 2008
Features
• Low on...
Description
RJK2055DPA
Silicon N Channel MOS FET High Speed Power Switching
REJ03G1735-0100 Rev.1.00 Sep 16, 2008
Features
Low on-resistance Low drive current High density mounting
Outline
RENESAS Package code: PWSN0008DA-A (Package name: WPAK)
5 6 7 8 D D D D
5 6 7 8
4 G
4 3 2 1
1, 2, 3 Source 4 Gate 5, 6, 7, 8 Drain
S S S 1 2 3
Absolute Maximum Ratings
(Ta = 25°C)
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Item
Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Body-drain diode reverse drain peak current Avalanche current Avalanche energy Channel dissipation Channel to case thermal impedance Channel temperature Storage temperature Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1% 2. Value at Tc = 25°C 3. STch = 25°C, Tch ≤ 150°C
Symbol VDSS VGSS ID ID (pulse)Note1 IDR IDR (pulse)Note1 IAPNote3 EARNote3 Pch Note2 θch-c Tch Tstg
Ratings 200 ±30 20 40 20 40 9 5.4 30 4.17 150 –55 to +150
Unit V V A A A A A mJ W °C/W °C °C
REJ03G1735-0100 Rev.1.00 Sep 16, 2008 Page 1 of 3
RJK2055DPA
Electrical Characteristics
(Ta = 25°C)
Item Drain to source breakdown voltage Zero gate voltage drain current Gate to source leak current Gate to source cutoff voltage Static drain to source on state resistance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Total gate charge Gate to source charge Gate to drain charge Body-drain diode forward voltage Body-drain diode reverse recovery...
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