2ST1480

2ST1480 2ST2480 Complementary power transistors Preliminary data Features ■ ■ ■ ■ Very low collector-emitter saturation voltage High current gain characteristic Fast switching speed Fully insulated package 2 1 Applications ■ ■ ■ ■ 3 Voltage regulation Computer and peripheral equipment Audio amplifier Relay driver Figure 1. Internal schematic diagrams SOT-32FP Description The devices are manufactured using new “PBHCD” (power bipolar high current density) technology. The resulting transistor shows exceptional high gain performances coupled with very low saturation voltage. www.DataSheet4U.com Table 1. Device summary Marking 2ST1480 SOT-32FP 2ST2480 2ST2480 Bag Package Packaging Order codes 2ST1480 October 2009 Doc ID 16380 Rev 1 1/7 www.st.com 7 This is preliminary information on a new product now in development or undergoing evaluation. Details are subject to change without notice. Absolute maximun rating 2ST1480, 2ST2480 1 Absolute maximun rating Table 2. Absolute maximum ratings Value Symbol Parameter NPN PNP VCBO VCEO VEBO IC ICM IB Ptot Tstg TJ Collector-base voltage (IE = 0) Collector-emitter voltage (IB = 0) Emitter-base voltage (IC = 0) Collector current Collector peak current Base current Total dissipation at Tc ≤ 25 °C Storage temperature Max. operating junction temperature 2ST1480 2ST2480 80 80 5 4 8 0.4 20 -65 to 150 150 V V V A A A W °C °C Unit Table 3. Symbol RthJC Thermal data Parameter Thermal resistance junction-case ___ _Max Value 6.3 Unit ...