2ST1480 2ST2480
Complementary power transistors
Preliminary data
Features
■ ■ ■ ■
Very low collector-emitter saturatio...
2ST1480 2ST2480
Complementary power
transistors
Preliminary data
Features
■ ■ ■ ■
Very low collector-emitter saturation voltage High current gain characteristic Fast switching speed Fully insulated package
2 1
Applications
■ ■ ■ ■
3
Voltage regulation Computer and peripheral equipment Audio amplifier Relay driver Figure 1. Internal schematic diagrams
SOT-32FP
Description
The devices are manufactured using new “PBHCD” (power bipolar high current density) technology. The resulting
transistor shows exceptional high gain performances coupled with very low saturation voltage.
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Table 1.
Device summary
Marking 2ST1480 SOT-32FP 2ST2480 2ST2480 Bag Package Packaging
Order codes 2ST1480
October 2009
Doc ID 16380 Rev 1
1/7
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This is preliminary information on a new product now in development or undergoing evaluation. Details are subject to change without notice.
Absolute maximun rating
2ST1480, 2ST2480
1
Absolute maximun rating
Table 2. Absolute maximum ratings
Value Symbol Parameter
NPN PNP VCBO VCEO VEBO IC ICM IB Ptot Tstg TJ Collector-base voltage (IE = 0) Collector-emitter voltage (IB = 0) Emitter-base voltage (IC = 0) Collector current Collector peak current Base current Total dissipation at Tc ≤ 25 °C Storage temperature Max. operating junction temperature 2ST1480 2ST2480 80 80 5 4 8 0.4 20 -65 to 150 150 V V V A A A W °C °C Unit
Table 3.
Symbol RthJC
Thermal data
Parameter Thermal resistance junction-case ___ _Max Value 6.3 Unit ...