NTTFS4932N

NTTFS4932N MOSFET – Power, Single, N-Channel, m8FL 30 V, 79 A Features Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant Applications Low−Side DC−DC Converters Power Load Switch Notebook Battery Management Motor Control MAXIMUM RATINGS (TJ = 25°C unless otherwise stated) Parameter Symbol Value Unit Drain−to−Source Voltage Gate−to−Source Voltage Continuous Drain Current RqJA (Note 1) Power Dissipation RqJA (Note 1) TA = 25°C TA = 85°C TA = 25°C VDSS VGS ID PD 30 V ±20 V 18 A 13 2.2 W Continuous Drain Current RqJA ≤ 10 s (Note 1) TA = 25°C ID 25.5 A TA = 85°C 18.5 Power Dissipation RqJA ≤ 10 s (Note 1) Continuous Drain Current RqJA (Note 2) Steady State TA = 25°C TA = 25°C TA = 85°C Power Dissipation RqJA (Note 2) TA = 25°C Continuous Drain Current RqJC (Note 1) TC = 25°C TC = 85°C Power Dissipation RqJC (Note 1) TC = 25°C Pulsed Drain Current TA = 25°C, tp = 10 ms Operating Junction and Storage Temperature Source Current (Body Diode) Drain to Source dV/dt PD ID PD ID PD IDM TJ, Tstg IS dV/dt 4.5 W 11 A 8.0 0.85 W 79 A 57 43 W 235 A −55 to °C +150 39 A 6.0 V/ns Single Pulse Drain−to−Source Avalanche Energy EAS 92.4 mJ (TJ = 25°C, VDD = 50 V, VGS = 10 V, IL = 43 Apk, L = 0.1 mH, RG = 25 W) Lead Temperature for Soldering Purposes (1/8″ from case for 10 s) ...