NTTFS4943N

NTTFS4943N Power MOSFET 30 V, 41 A, Single N−Channel, m8FL Features Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant Applications DC−DC Converters Power Load Switch Notebook Battery Management Motor Control MAXIMUM RATINGS (TJ = 25°C unless otherwise stated) Parameter Symbol Value Unit Drain−to−Source Voltage Gate−to−Source Voltage Continuous Drain Current RqJA (Note 1) Power Dissipation RqJA (Note 1) VDSS 30 V VGS ±20 V TA = 25°C ID 12.7 A TA = 85°C 9.2 TA = 25°C PD 2.17 W Continuous Drain Current RqJA ≤ 10 s (Note 1) TA = 25°C ID TA = 85°C 18 A 13 Power Dissipation RqJA ≤ 10 s (Note 1) Continuous Drain Current RqJA (Note 2) Steady State TA = 25°C TA = 25°C TA = 85°C Power Dissipation RqJA (Note 2) TA = 25°C Continuous Drain Current RqJC (Note 1) TC = 25°C TC = 85°C Power Dissipation RqJC (Note 1) TC = 25°C Pulsed Drain Current TA = 25°C, tp = 10 ms Operating Junction and Storage Temperature Source Current (Body Diode) Drain to Source dV/dt PD 4.35 W ID 8.0 A 5.7 PD 0.84 W ID 41 A 29 PD 22.3 W IDM TJ, Tstg IS dV/dt 125 A −55 to °C +150 25 A 6.0 V/ns Single Pulse Drain−to−Source Avalanche Energy EAS (TJ = 25°C, VDD = 50 V, VGS = 10 V, IL = 25 Apk, L = 0.1 mH, RG = 25 W) 31 mJ Lead Temperature for Soldering Purposes (1/8″ from case for 10 s) ...