NTTFS4945N

NTTFS4945N Power MOSFET 30 V, 34 A, Single N−Channel, m8FL Features Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant Applications Power Load Switch Notebook Battery Management Motor Control MAXIMUM RATINGS (TJ = 25°C unless otherwise stated) Parameter Symbol Value Unit Drain−to−Source Voltage VDSS 30 V Gate−to−Source Voltage Continuous Drain Current RqJA (Note 1) Power Dissipation RqJA (Note 1) VGS ±20 V TA = 25°C ID 11.2 A TA = 85°C 8.0 TA = 25°C PD 2.16 W Continuous Drain Current RqJA ≤ 10 s (Note 1) TA = 25°C ID 15.7 A TA = 85°C 11.3 Power Dissipation RqJA ≤ 10 s (Note 1) Continuous Drain Current RqJA (Note 2) Steady State TA = 25°C TA = 25°C TA = 85°C Power Dissipation RqJA (Note 2) TA = 25°C Continuous Drain Current RqJC (Note 1) TC = 25°C TC = 85°C Power Dissipation RqJC (Note 1) TC = 25°C Pulsed Drain Current TA = 25°C, tp = 10 ms Operating Junction and Storage Temperature Source Current (Body Diode) Drain to Source dV/dt PD 4.30 W ID 7.1 A 5.1 PD 0.89 W ID 34 A 24.4 PD 20 W IDM TJ, Tstg IS dV/dt 102 A −55 to °C +150 20 A 6.0 V/ns Single Pulse Drain−to−Source Avalanche Energy EAS 26.5 mJ (TJ = 25°C, VDD = 50 V, VGS = 10 V, IL = 23 Apk, L = 0.1 mH, RG = 25 W) Lead Temperature for Soldering Purposes (1/8″ from case for 10 s) TL 260 °C ...