2SA1962/FJA4213 — PNP Epitaxial Silicon Transistor
March 2008
2SA1962/FJA4213 PNP Epitaxial Silicon Transistor
Applica...
2SA1962/FJA4213 —
PNP Epitaxial Silicon
Transistor
March 2008
2SA1962/FJA4213
PNP Epitaxial Silicon
Transistor
Applications
High-Fidelity Audio Output Amplifier General Purpose Power Amplifier
Features
High Current Capability: IC = -15A High Power Dissipation : 130watts High Frequency : 30MHz. High Voltage : VCEO= -230V Wide S.O.A for reliable operation. Excellent Gain Linearity for low THD. Complement to 2SC5242/FJA4313. Thermal and electrical Spice models are available. Same
transistor is also available in: -- TO264 package, 2SA1943/FJL4215 : 150 watts -- TO220 package, FJP1943 : 80 watts -- TO220F package, FJPF1943 : 50 watts
1
TO-3P
1.Base 2.Collector 3.Emitter
Absolute Maximum Ratings*
Symbol
BVCBO BVCEO BVEBO IC www.DataSheet4U.com IB PD TJ, TSTG Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Base Current
Ta = 25°C unless otherwise noted
Parameter
Ratings
-230 -230 -5 -15 -1.5 130 1.04 - 50 ~ +150
Units
V V V A A W W/°C °C
Total Device Dissipation(TC=25°C) Derate above 25°C Junction and Storage Temperature
* These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
Thermal Characteristics*
Symbol
RθJC
* Device mounted on minimum pad size
Ta=25°C unless otherwise noted
Parameter
Thermal Resistance, Junction to Case
Max.
0.96
Units
°C/W
hFE Classification
Classification
hFE1
R
55 ~ 110
O
80 ~ 160
© 2008 Fairchild Semiconductor Corporation...