2SA1962 Transistor Datasheet

2SA1962 Datasheet PDF, Equivalent


Part Number

2SA1962

Description

PNP Epitaxial Silicon Transistor

Manufacture

Fairchild Semiconductor

Total Page 6 Pages
PDF Download
Download 2SA1962 Datasheet PDF


2SA1962
2SA1962/FJA4213
PNP Epitaxial Silicon Transistor
Applications
• High-Fidelity Audio Output Amplifier
• General Purpose Power Amplifier
Features
• High Current Capability: IC = -15A
• High Power Dissipation : 130watts
• High Frequency : 30MHz.
• High Voltage : VCEO= -230V
• Wide S.O.A for reliable operation.
• Excellent Gain Linearity for low THD.
• Complement to 2SC5242/FJA4313.
• Thermal and electrical Spice models are available.
• Same transistor is also available in:
-- TO264 package, 2SA1943/FJL4215 : 150 watts
-- TO220 package, FJP1943 : 80 watts
-- TO220F package, FJPF1943 : 50 watts
Absolute Maximum Ratings* Ta = 25°C unless otherwise noted
Symbol
Parameter
BVCBO
BVCEO
BVEBO
IC
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IB
PD
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Base Current
Total Device Dissipation(TC=25°C)
Derate above 25°C
TJ, TSTG
Junction and Storage Temperature
* These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
Thermal Characteristics* Ta=25°C unless otherwise noted
Symbol
Parameter
RθJC
Thermal Resistance, Junction to Case
* Device mounted on minimum pad size
hFE Classification
Classification
hFE1
R
55 ~ 110
© 2008 Fairchild Semiconductor Corporation
2SA1962/FJA4213 Rev. A2
1
March 2008
1 TO-3P
1.Base 2.Collector 3.Emitter
Ratings
-230
-230
-5
-15
-1.5
130
1.04
- 50 ~ +150
Units
V
V
V
A
A
W
W/°C
°C
Max.
0.96
Units
°C/W
O
80 ~ 160
www.fairchildsemi.com

2SA1962
Electrical Characteristics* Ta=25°C unless otherwise noted
Symbol
Parameter
Test Condition
BVCBO
Collector-Base Breakdown Voltage
BVCEO
Collector-Emitter Breakdown Voltage
BVEBO
Emitter-Base Breakdown Voltage
ICBO
Collector Cut-off Current
IEBO
Emitter Cut-off Current
hFE1
DC Current Gain
hFE2
DC Current Gain
VCE(sat)
Collector-Emitter Saturation Voltage
VBE(on)
Base-Emitter On Voltage
fT Current Gain Bandwidth Product
Cob Output Capacitance
* Pulse Test: Pulse Width=20µs, Duty Cycle2%
IC=-5mA, IE=0
IC=-10mA, RBE=
IE=-5mA, IC=0
VCB=-230V, IE=0
VEB=-5V, IC=0
VCE=-5V, IC=-1A
VCE=-5V, IC=-7A
IC=-8A, IB=-0.8A
VCE=-5V, IC=-7A
VCE=-5V, IC=-1A
VCB=-10V, f=1MHz
Min.
-230
-230
-5
55
35
Typ.
60
-0.4
-1.0
30
360
Max.
-5.0
-5.0
160
-3.0
-1.5
Units
V
V
V
µA
µA
V
V
MHz
pF
Ordering Information
Part Number
2SA1962RTU
2SA1962OTU
FJA4213RTU
FJA4213OTU
Marking
A1962R
A1962O
J4213R
J4213O
Package
TO-3P
TO-3P
TO-3P
TO-3P
Packing Method
TUBE
TUBE
TUBE
TUBE
Remarks
hFE1 R grade
hFE1 O grade
hFE1 R grade
hFE1 O grade
www.DataSheet4U.com
© 2008 Fairchild Semiconductor Corporation
2SA1962/FJA4213 Rev. A2
2
www.fairchildsemi.com


Features 2SA1962/FJA4213 — PNP Epitaxial Silico n Transistor March 2008 2SA1962/FJA42 13 PNP Epitaxial Silicon Transistor App lications • High-Fidelity Audio Outpu t Amplifier • General Purpose Power A mplifier Features • • • • • • • • • High Current Capability : IC = -15A High Power Dissipation : 13 0watts High Frequency : 30MHz. High Vol tage : VCEO= -230V Wide S.O.A for relia ble operation. Excellent Gain Linearity for low THD. Complement to 2SC5242/FJA 4313. Thermal and electrical Spice mode ls are available. Same transistor is al so available in: -- TO264 package, 2SA1 943/FJL4215 : 150 watts -- TO220 packag e, FJP1943 : 80 watts -- TO220F package , FJPF1943 : 50 watts 1 TO-3P 1.Base 2.Collector 3.Emitter Absolute Maximum Ratings* Symbol BVCBO BVCEO BVEBO IC w ww.DataSheet4U.com IB PD TJ, TSTG Colle ctor-Base Voltage Collector-Emitter Vol tage Emitter-Base Voltage Collector Cur rent Base Current Ta = 25°C unless ot herwise noted Parameter Ratings -230 -230 -5 -15 -1.5 130 1.04 - 50 ~ +150 Units V V .
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