2SJ203 Transistor Datasheet

2SJ203 Datasheet PDF, Equivalent


Part Number

2SJ203

Description

MOS Fied Effect Transistor

Manufacture

Guangdong Kexin Industrial

Total Page 1 Pages
PDF Download
Download 2SJ203 Datasheet PDF


2SJ203
SMD Type
MOSFET
MOS Fied Effect Transistor
2SJ203
Features
Directly driven by Ics having a 3V poer supply.
Not necessary to consider driving current thanks to hight input impedance.
Possible to reduce the number of parts by omitting the bias resisor.
SOT-23
2.9+0.1
-0.1
0.4+0.1
-0.1
3
12
0.95+0.1
-0.1
1.9+0.1
-0.1
Unit: mm
0.1+0.05
-0.01
1.B1aGseATE
2.2EmSiOtteUrRCE
3.3coDlleRctAorIN
Absolute Maximum Ratings Ta = 25
Parameter
Drain to source voltage VGS=0
Gate to source voltage VDS=0
Drain current (DC)
Drain current(pulse) *
Power dissipation
Channel temperature
Storage temperature
* PW 10 ms; d 50%.
www.DataSEheleect4tUric.caolmCharacteristics Ta = 25
Parameter
Drain cut-off current
Gate leakage current
Gate cut-off voltage
Forward transfer admittance
Drain to source on-state resistance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Marking
Marking
H14
Symbol
VDSS
VGSS
ID
ID
PD
Tch
Tstg
Rating
-16
7
200
400
200
-55 to 80
-55 to +150
Unit
V
V
mA
mA
mW
Symbol
Testconditons
IDSS VDS=-16V,VGS=0
IGSS VGS= 3V,VDS=0
VGS(off) VDS=-3V,ID=-1 A
Yfs VDS=-3V,ID=-10mA
VGS=-2.5V,ID=-1mA
RDS(on)
VGS=-4.0V,ID=-1mA
Ciss
Coss VDS=-3.0V,VGS=0,f=1MHZ
Crss
td(on)
tr
td(off)
VGS(on)=-3V,RG=10 ,VDD=-3.0V,ID=-
10mA RL=300
tf
Min Typ Max Unit
-10 A
10 A
-1.0 -1.6 -2.2 V
20 48
ms
15 23
7 10
28 pF
32 pF
6 pF
180 ns
420 ns
100 ns
200 ns
www.kexin.com.cn 1


Features SMD Type MOS Fied Effect Transistor 2SJ2 03 SOT-23 +0.1 2.9-0.1 +0.1 0.4-0.1 MO SFET Unit: mm Features +0.1 2.4-0.1 1 +0.1 0.95-0.1 +0.1 1.9-0.1 2 Possib le to reduce the number of parts by omi tting the bias resisor. 0.55 Not nece ssary to consider driving current thank s to hight input impedance. +0.1 1.3-0 .1 Directly driven by Ics having a 3V poer supply. 0.4 3 +0.05 0.1-0.01 + 0.1 0.97-0.1 1.Base 1 GATE 2.Emitter 2 SOURCE 3.collector 3 DRAIN Absolute M aximum Ratings Ta = 25 Parameter Drain to source voltage VGS=0 Gate to source voltage Drain current (DC) Drain curren t(pulse) * Power dissipation Channel te mperature Storage temperature * PW 10 m s; d 50%. VDS=0 Symbol VDSS VGSS ID ID PD Tch Tstg Rating -16 7 200 400 200 -5 5 to 80 -55 to +150 Unit V V mA mA mW www.DataSheet4U.com Electrical Charact eristics Ta = 25 Parameter Symbol IDSS IGSS Testconditons VDS=-16V,VGS=0 VGS= 3V,VDS=0 A -1.0 20 -1.6 48 15 7 28 VDS= -3.0V,VGS=0,f=1MHZ 32 6 180 VGS(on)=-3V,RG=10 10mA RL=300 ,VDD=.
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