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SG50N06DS

Sirectifier Semiconductors

Discrete IGBTs

SG50N06S, SG50N06DS Discrete IGBTs E C Dimensions SOT-227(ISOTOP) Dim. A B C D Millimeter Min. Max. 31.50 7.80 4.09 4.09...


Sirectifier Semiconductors

SG50N06DS

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SG50N06S, SG50N06DS Discrete IGBTs E C Dimensions SOT-227(ISOTOP) Dim. A B C D Millimeter Min. Max. 31.50 7.80 4.09 4.09 4.09 14.91 30.12 37.80 11.68 8.92 0.76 12.60 25.15 1.98 4.95 26.54 3.94 4.72 24.59 -0.05 3.30 0.780 31.88 8.20 4.29 4.29 4.29 15.11 30.30 38.20 12.22 9.60 0.84 12.85 25.42 2.13 5.97 26.90 4.42 4.85 25.07 0.1 4.57 0.830 Inches Min. Max. 1.240 0.307 0.161 0.161 0.161 0.587 1.186 1.489 0.460 0.351 0.030 0.496 0.990 0.078 0.195 1.045 0.155 0.186 0.968 -0.002 0.130 19.81 1.255 0.323 0.169 0.169 0.169 0.595 1.193 1.505 0.481 0.378 0.033 0.506 1.001 0.084 0.235 1.059 0.174 0.191 0.987 0.004 0.180 21.08 G=Gate, C=Collector, E=Emitter E G E F G H J K L M N O P Q R S T U V W SG50N06S Symbol VCES VCGR VGES VGEM IC25 IC90 ICM SSOA SG50N06DS Test Conditions Maximum Ratings 600 600 ±20 ±30 75 50 200 ICM=100 @ 0.8 VCES 250 -55...+150 150 -55...+150 Unit V V TJ=25oC to 150oC TJ=25oC to 150oC; RGE=1 M ; Continuous Transient TC=25oC TC=90oC TC=25oC, 1 ms A A W o VGE=15V; TVJ=125oC; RG=10 (RBSOA) Clamped inductive load, L=30uH PC TC=25oC TJ TJM Tstg www.DataSheet4U.com Md Mounting C torque Terminal connection torque(M4) 1.5/13 1.5/13 30 300 Nm/Ib.in. g o Weight Maximum lead temperature for soldering 1.6 mm (0.062 in.) from case for 10 s C (TJ=25oC, unless otherwise specified) Symbol BVCES VGE(th) ICES IGES VCE(sat) Test Conditions IC=250uA; VGE=0V IC=250uA; VCE=VGE VCE=0.8VCES; VGE=0V; TJ=125 C o Characteristic Values min. 600 2.5 5 200 1 ±100 2.5 typ. max. Un...




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