SMD Type
PNP Transistors KST8550S
SOT-23
+0.1 2.9-0.1 +0.1 0.4-0.1
Transistors
Unit: mm
Features
+0.1 2.4-0.1
Collec...
SMD Type
PNP Transistors KST8550S
SOT-23
+0.1 2.9-0.1 +0.1 0.4-0.1
Transistors
Unit: mm
Features
+0.1 2.4-0.1
Collector current: IC-=0.5A
+0.1 1.3-0.1
1
+0.1 0.95-0.1 +0.1 1.9-0.1
2
0.55
0.4
3
+0.05 0.1-0.01
+0.1 0.97-0.1
1.Base 2.Emitter 3.collector
Absolute Maximum Ratings Ta = 25
Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current -Continuous Collector Power Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC PC Tj Tstg Rating -40 -25 -5 -0.5 0.3 150 -55 to 150 Unit V V V A W
Electrical Characteristics Ta = 25
www.DataSheet4U.com Parameter
Symbol VCBO VCEO VEBO ICBO ICEO IEBO hFE
Testconditons IC=-100 A, IE=0 IC=-1mA, IB=0 IE=-100 A, IC=0 VCB=-40V, IE=0 VCE=-20V, IB=0 VEB=-3V, IC=0 VCE=-1V, IC=-50mA VCE=-1V, IC=-500mA
Min -40 -25 -5
Typ
+0.1 0.38-0.1
0-0.1
Max
Unit V V V
Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cut-off current Collector cut-off current Emitter cut-off current DC current gain Collector-emitter saturation voltage Base-emitter saturation voltage Transition frequency
-0.1 -0.1 -0.1 120 50 -0.5 -1.2 150 350
A A A
VCE(sat) IC=-500mA, IB=-50mA VBE(sat) IC=-500mA, IB=-50mA fT VCE= -6V, IC= -20mA,f=30MHz
V V MHz
hFE Classification
Marking Rank hFE L 120 200 2TY H 200 350
www.kexin.com.cn
1
SMD Type
KST8550S
Typical Characteristics
Transistors
Fig.1 Static Characteristic
Fig.2 DC Current Gain
...