Document
SavantIC Semiconductor
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Product Specification
Silicon PNP Power Transistors
2SA1104
DESCRIPTION ·With TO-3PN package ·High frequency ·High power dissipation APPLICATIONS ·For use in audio and general purpose applications
PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter Fig.1 simplified outline (TO-3PN) and symbol DESCRIPTION
Absolute maximum ratings(Ta= )
SYMBOL VCBO VCEO
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PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector power dissipation Junction temperature Storage temperature TC=25
CONDITIONS Open emitter Open base Open collector
VALUE -120 -120 -6 -8 80 150 -55~150
UNIT V V V A W
VEBO IC PC Tj Tstg
SavantIC Semiconductor
www.DataSheet4U.com
Product Specification
Silicon PNP Power Transistors
CHARACTERISTICS
Tj=25 unless otherwise specified PARAMETER CONDITIONS MIN
2SA1104
SYMBOL
TYP.
MAX
UNIT
V(BR)CEO
Collector-emitter breakdown voltage
IC=-25mA ;IB=0
-120
V
VCEsat
Collector-emitter saturation voltage
IC=-3A; IB=-0.3A
-1.5
V
VBEsat
Base-emitter saturation voltage
IC=-3A; IB=-0.3A
-1.8
V
ICBO
Collector cut-off current
VCB=-120V; IE=0
-100
µA
IEBO
Emitter cut-off current
VEB=-6V; IC=0
-100
µA
hFE
DC current gain
IC=-3A ; VCE=4V
50
180
fT
Transition frequency
IE=1A ; VCE=-12V
20
MHz
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2
SavantIC Semiconductor
www.DataSheet4U.com
Product Specification
Silicon PNP Power Transistors
PACKAGE OUTLINE
2SA1104
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Fig.2 outline dimensions (unindicated tolerance:±0.1mm)
3
.