Ultrafast IGBT
FGAF40N60UF — 600 V PT IGBT
November 2013
FGAF40N60UF
600 V PT IGBT
General Description
Fairchild's UF series of IGBT...
Description
FGAF40N60UF — 600 V PT IGBT
November 2013
FGAF40N60UF
600 V PT IGBT
General Description
Fairchild's UF series of IGBTs provide low conduction and switching losses. The UF series is designed for applications such as general inverters and PFC where high speed switching is a required feature.
Features
High Speed Switching Low Saturation Voltage: VCE(sat) = 2.3 V @ IC = 20 A High Input Impedance
Applications
General Inverter, PFC
C
TO-3PF
GCE
Absolute Maximum Ratings TC = 25C unless otherwise noted
Symbol VCES VGES
IC
ICM (1) PD
TJ Tstg
TL
Description
Collector-Emitter Voltage
Gate-Emitter Voltage
Collector Current Collector Current Pulsed Collector Current
@ TC = 25C @ TC = 100C
Maximum Power Dissipation Maximum Power Dissipation Operating Junction Temperature
@ TC = 25C @ TC = 100C
Storage Temperature Range
Maximum Lead Temp. for Soldering
Purposes, 1/8” from Case for 5 Seconds
Notes : (1) Repetitive rating : Pulse width limited by max. junction temperature
Thermal Characteristics
Symbol
RJC(IGBT) RJA
Parameter Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient
G
E
Ratings 600 20 40 20 160 100 40
-55 to +150 -55 to +150
300
Typ. ---
Max. 1.2 40
Unit V V A A A W W C C C
Unit C/W C/W
©2004 Fairchild Semiconductor Corporation FGAF40N60UF Rev. C1
www.fairchildsemi.com
FGAF40N60UF — 600 V PT IGBT
Electrical Characteristics of the IGBT TC = 25C unless otherwise noted
Symbol
Parameter
Test Conditions
Mi...
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