BUL3P5
MEDIUM VOLTAGE FAST-SWITCHING PNP POWER TRANSISTOR
Features
■ ■ ■ ■
MEDIUM VOLTAGE CAPABILITY LOW SPREAD OF DYNA...
BUL3P5
MEDIUM VOLTAGE FAST-SWITCHING
PNP POWER
TRANSISTOR
Features
■ ■ ■ ■
MEDIUM VOLTAGE CAPABILITY LOW SPREAD OF DYNAMIC PARAMETERS MINIMUM LOT-TO-LOT SPREAD FOR RELIABLE OPERATION VERY HIGH SWITCHING SPEED
2 3
Applications
■
1
ELECTRONIC BALLASTS FOR FLUORESCENT LIGHTING
TO-220
Description
The BUL3P5 is manufactured using high voltage Multi-Epitaxial Planar technology for high switching speeds and medium voltage capability. It uses a Cellular Emitter structure with planar edge termination to enhance switching speeds while maintaining the wide RBSOA. The device is expressly designed for a new solution to be used in compact fluorescent lamps, H.F. ballast voltage FED where it is coupled with the BUL3N7, its complementary
NPN transistor.
www.DataSheet4U.com
Internal Schematic Diagram
Order Codes
Part Number BUL3P5 Marking BUL3P5 Package TO-220 Packing TUBE
December 2005
rev.2 1/10
www.st.com 10
1 Absolute Maximum Ratings
BUL3P5
1
Table 1.
Symbol VCES VCEO VEBO IC ICM IB IBM PTOT Tstg TJ
Absolute Maximum Ratings
Absolute Maximum Rating
Parameter Collector-Emitter Voltage (VBE = 0) Collector-Emitter Voltage (IB = 0) Emitter-Base Voltage (IC = 0, IB = -0.75 A, tp < 100ms, Tj < 150°C) Collector Current Collector Peak Current (tP < 5ms) Base Current Base Peak Current (tP < 5ms) Total dissipation at Tc = 25°C Storage Temperature Max. Operating Junction Temperature Value -500 -400 V(BR)EBO -3 -6 -1.5 -3 60 -65 to 150 150 Unit V V V A A A A W °C °C
Table 2.
Symbol RthJ...