BUL3P5

BUL3P5 MEDIUM VOLTAGE FAST-SWITCHING PNP POWER TRANSISTOR Features ■ ■ ■ ■ MEDIUM VOLTAGE CAPABILITY LOW SPREAD OF DYNAMIC PARAMETERS MINIMUM LOT-TO-LOT SPREAD FOR RELIABLE OPERATION VERY HIGH SWITCHING SPEED 2 3 Applications ■ 1 ELECTRONIC BALLASTS FOR FLUORESCENT LIGHTING TO-220 Description The BUL3P5 is manufactured using high voltage Multi-Epitaxial Planar technology for high switching speeds and medium voltage capability. It uses a Cellular Emitter structure with planar edge termination to enhance switching speeds while maintaining the wide RBSOA. The device is expressly designed for a new solution to be used in compact fluorescent lamps, H.F. ballast voltage FED where it is coupled with the BUL3N7, its complementary NPN transistor. www.DataSheet4U.com Internal Schematic Diagram Order Codes Part Number BUL3P5 Marking BUL3P5 Package TO-220 Packing TUBE December 2005 rev.2 1/10 www.st.com 10 1 Absolute Maximum Ratings BUL3P5 1 Table 1. Symbol VCES VCEO VEBO IC ICM IB IBM PTOT Tstg TJ Absolute Maximum Ratings Absolute Maximum Rating Parameter Collector-Emitter Voltage (VBE = 0) Collector-Emitter Voltage (IB = 0) Emitter-Base Voltage (IC = 0, IB = -0.75 A, tp < 100ms, Tj < 150°C) Collector Current Collector Peak Current (tP < 5ms) Base Current Base Peak Current (tP < 5ms) Total dissipation at Tc = 25°C Storage Temperature Max. Operating Junction Temperature Value -500 -400 V(BR)EBO -3 -6 -1.5 -3 60 -65 to 150 150 Unit V V V A A A A W °C °C Table 2. Symbol RthJ...