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BUL3P5 Dataheets PDF



Part Number BUL3P5
Manufacturers STMicroelectronics
Logo STMicroelectronics
Description MEDIUM VOLTAGE FAST-SWITCHING PNP POWER TRANSISTOR
Datasheet BUL3P5 DatasheetBUL3P5 Datasheet (PDF)

BUL3P5 MEDIUM VOLTAGE FAST-SWITCHING PNP POWER TRANSISTOR Features ■ ■ ■ ■ MEDIUM VOLTAGE CAPABILITY LOW SPREAD OF DYNAMIC PARAMETERS MINIMUM LOT-TO-LOT SPREAD FOR RELIABLE OPERATION VERY HIGH SWITCHING SPEED 2 3 Applications ■ 1 ELECTRONIC BALLASTS FOR FLUORESCENT LIGHTING TO-220 Description The BUL3P5 is manufactured using high voltage Multi-Epitaxial Planar technology for high switching speeds and medium voltage capability. It uses a Cellular Emitter structure with planar edge terminati.

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BUL3P5 MEDIUM VOLTAGE FAST-SWITCHING PNP POWER TRANSISTOR Features ■ ■ ■ ■ MEDIUM VOLTAGE CAPABILITY LOW SPREAD OF DYNAMIC PARAMETERS MINIMUM LOT-TO-LOT SPREAD FOR RELIABLE OPERATION VERY HIGH SWITCHING SPEED 2 3 Applications ■ 1 ELECTRONIC BALLASTS FOR FLUORESCENT LIGHTING TO-220 Description The BUL3P5 is manufactured using high voltage Multi-Epitaxial Planar technology for high switching speeds and medium voltage capability. It uses a Cellular Emitter structure with planar edge termination to enhance switching speeds while maintaining the wide RBSOA. The device is expressly designed for a new solution to be used in compact fluorescent lamps, H.F. ballast voltage FED where it is coupled with the BUL3N7, its complementary NPN transistor. www.DataSheet4U.com Internal Schematic Diagram Order Codes Part Number BUL3P5 Marking BUL3P5 Package TO-220 Packing TUBE December 2005 rev.2 1/10 www.st.com 10 1 Absolute Maximum Ratings BUL3P5 1 Table 1. Symbol VCES VCEO VEBO IC ICM IB IBM PTOT Tstg TJ Absolute Maximum Ratings Absolute Maximum Rating Parameter Collector-Emitter Voltage (VBE = 0) Collector-Emitter Voltage (IB = 0) Emitter-Base Voltage (IC = 0, IB = -0.75 A, tp < 100ms, Tj < 150°C) Collector Current Collector Peak Current (tP < 5ms) Base Current Base Peak Current (tP < 5ms) Total dissipation at Tc = 25°C Storage Temperature Max. Operating Junction Temperature Value -500 -400 V(BR)EBO -3 -6 -1.5 -3 60 -65 to 150 150 Unit V V V A A A A W °C °C Table 2. Symbol RthJ-case RthJ-amb Thermal Data Parameter Thermal Resistance Junction-Case_______________Max Thermal Resistance Junction-Ambient ______ ______Max Value 2.08 62.5 Unit °C/W °C/W www.DataSheet4U.com 2/10 BUL3P5 2 Electrical Characteristics 2 Table 3. Symbol ICES Electrical Characteristics Electrical Characteristics (TCASE = 25°C; unless otherwise specified) Parameter Collector Cut-off Current (V BE = 0) Test Conditions VCE = -500 V VCE = -500 V__ __TC = 125°C -5 -400 -0.5 -0.5 -1.1 -1.2 -1.3 10 18 4 Min. Typ. Max. -0.1 -0.5 -10 Unit mA mA V V V V V V V V(BR)EBO Emitter-Base Breakdown Voltage IE = -10 mA (IC = 0) VCEO(sus) Collector-Emitter Note: 1 Sustaining Voltage (IB = 0) VCE(sat) Note: 1 VBE(sat) Note: 1 Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage IC = 100 mA IC = -0.7 A __ _ IB = -0.1A IC = -1 A __ _ IB = -0.2 A IC = -0.5A ____ IB = -0.1 A IC = -1A _____ IB = -0.2 A IC = -2A _____ IB = -0.4 A IC = -10 mA __ VCE = -5 V hFE DC Current Gain IC = -0.7A _ __ VCE = -5 V IC = -2A_ VCE = -5 V IC = -0.7 A ___ VCC = -250 V IB1 = -0.14 A __ IB2 = 0.14 A Tp = 30 µs IC = -1 A ____ VBE(off) = 5 V L = 1 mH IB1 = -0.2 A Rbb = 0 Ω Vclamp = 200 V 34 tr ts tf ts tf www.DataSheet4U.com RESISTIVE LOAD Rise Time Storage Time Fall Time INDUCTIVE LOAD Storage Time Fall Time 100 2.4 80 450 70 ns µs ns ns ns Note: 1 Pulsed duration = 300 µs, duty cycle ≤1.5%. 3/10 2 Electrical Characteristics BUL3P5 2.1 Typical Characteristics Safe Operating Area Figure 2. DC Current Gain Figure 1. Figure 3. DC Current Gain Figure 4. Collector Emitter Saturation Voltage www.DataSheet4U.com Figure 5. Base Emitter Saturation Voltage Figure 6. Switching Times Resistive Load 4/10 BUL3P5 Figure 7. Switching Times Inductive Load Figure 8. 2 Electrical Characteristics Reverse Bised SOA www.DataSheet4U.com 5/10 3 Test Circuits BUL3P5 3 Figure 9. Test Circuits Inductive Load Switching Test Circuit 1) Fast Electronic Switching 2) Non-inductive Resisitor 3) Fast Recovery Rectifier Figure 10. Resistive Load Switching Test Circuits www.DataSheet4U.com 1) Fast Electronic Switching 2) Non-inductive Resisitor 6/10 BUL3P5 4 Package Mechanical Data 4 Package Mechanical Data In order to meet environmental requirements, ST offers these devices in ECOPACK® packages. These packages have a Lead-free second level interconnect . The category of second level interconnect is marked on the package and on the inner box label, in compliance with JEDEC Standard JESD97. The maximum ratings related to soldering conditions are also marked on the inner box label. ECOPACK is an ST trademark. ECOPACK specifications are available at: www.st.com www.DataSheet4U.com 7/10 4 Package Mechanical Data BUL3P5 TO-220 MECHANICAL DATA DIM. A b b1 c D E e e1 F H1 J1 L L1 L20 L30 mm. MIN. 4.40 0.61 1.15 0.49 15.25 10 2.40 4.95 1.23 6.20 2.40 13 3.50 16.40 28.90 3.75 2.65 3.85 2.95 0.147 0.104 TYP MAX. 4.60 0.88 1.70 0.70 15.75 10.40 2.70 5.15 1.32 6.60 2.72 14 3.93 MIN. 0.173 0.024 0.045 0.019 0.60 0.393 0.094 0.194 0.048 0.244 0.094 0.511 0.137 0.645 1.137 0.151 0.116 inch TYP. MAX. 0.181 0.034 0.066 0.027 0.620 0.409 0.106 0.202 0.052 0.256 0.107 0.551 0.154 øP Q www.DataSheet4U.com 8/10 BUL3P5 5 Revision History 5 Revision History Date 09-Dec-2005 Revision 2 Inserted curves Changes www.DataSheet4U.com 9/10 5 Revision History BUL3P5 www.DataSheet4U.com Information furnished is believed to be accurate and reliable. However, STMicroelectron.


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