DatasheetsPDF.com

ST330CPBF Dataheets PDF



Part Number ST330CPBF
Manufacturers Vishay Siliconix
Logo Vishay Siliconix
Description Phase Control Thyristors
Datasheet ST330CPBF DatasheetST330CPBF Datasheet (PDF)

ST330CPbF Series Vishay High Power Products Phase Control Thyristors (Hockey PUK Version), 720 A FEATURES • Center amplifying gate • Metal case with ceramic insulator • International standard case TO-200AB (E-PUK) • Lead (Pb)-free • Designed and qualified for industrial level TO-200AB (E-PUK) RoHS COMPLIANT TYPICAL APPLICATIONS • DC motor controls • Controlled DC power supplies 720 A PRODUCT SUMMARY IT(AV) • AC controllers MAJOR RATINGS AND CHARACTERISTICS PARAMETER IT(AV) IT(RMS) TEST CON.

  ST330CPBF   ST330CPBF


Document
ST330CPbF Series Vishay High Power Products Phase Control Thyristors (Hockey PUK Version), 720 A FEATURES • Center amplifying gate • Metal case with ceramic insulator • International standard case TO-200AB (E-PUK) • Lead (Pb)-free • Designed and qualified for industrial level TO-200AB (E-PUK) RoHS COMPLIANT TYPICAL APPLICATIONS • DC motor controls • Controlled DC power supplies 720 A PRODUCT SUMMARY IT(AV) • AC controllers MAJOR RATINGS AND CHARACTERISTICS PARAMETER IT(AV) IT(RMS) TEST CONDITIONS VALUES 720 Ths Ths 50 Hz 60 Hz 50 Hz 60 Hz 55 1420 25 9000 9420 405 370 400 to 1600 Typical 100 - 40 to 125 UNITS A °C A °C A ITSM I2 t VDRM/VRRM tq TJ www.DataSheet4U.com kA2s V µs °C ELECTRICAL SPECIFICATIONS VOLTAGE RATINGS TYPE NUMBER VOLTAGE CODE 04 08 ST330C..C 12 14 16 VDRM/VRRM, MAXIMUM REPETITIVE PEAK IDRM/IRRM MAXIMUM VRSM, MAXIMUM NON-REPETITIVE PEAK VOLTAGE AT TJ = TJ MAXIMUM AND OFF-STATE VOLTAGE V mA V 400 800 1200 1400 1600 500 900 1300 1500 1700 50 Document Number: 94407 Revision: 11-Aug-08 For technical questions, contact: [email protected] www.vishay.com 1 ST330CPbF Series Vishay High Power Products Phase Control Thyristors (Hockey PUK Version), 720 A ABSOLUTE MAXIMUM RATINGS PARAMETER Maximum average on-state current at heatsink temperature Maximum RMS on-state current SYMBOL IT(AV) IT(RMS) TEST CONDITIONS 180° conduction, half sine wave double side (single side) cooled DC at 25 °C heatsink temperature double side cooled t = 10 ms Maximum peak, one-cycle non-repetitive surge current ITSM t = 8.3 ms t = 10 ms t = 8.3 ms t = 10 ms Maximum I2t for fusing I2 t t = 8.3 ms t = 10 ms t = 8.3 ms Maximum I2√t for fusing Low level value of threshold voltage High level value of threshold voltage Low level value of on-state slope resistance High level value of on-state slope resistance Maximum on-state voltage Maximum holding current Typical latching current I2√t VT(TO)1 VT(TO)2 rt1 rt2 VTM IH IL No voltage reapplied 100 % VRRM reapplied No voltage reapplied 100 % VRRM reapplied VALUES 720 (350) 55 (75) 1420 9000 9420 7570 Sinusoidal half wave, initial TJ = TJ maximum 7920 405 370 287 262 4050 0.91 0.92 0.58 0.57 1.96 600 1000 kA2√s V mΩ V mA kA2s A UNITS A °C t = 0.1 to 10 ms, no voltage reapplied (16.7 % x π x IT(AV) < I < π x IT(AV)), TJ = TJ maximum (I > π x IT(AV)), TJ = TJ maximum (16.7 % x π x IT(AV) < I < π x IT(AV)), TJ = TJ maximum (I > π x IT(AV)), TJ = TJ maximum Ipk = 1810 A, TJ = TJ maximum, tp = 10 ms sine pulse TJ = 25 °C, anode supply 12 V resistive load SWITCHING PARAMETER Maximum non-repetitive rate of rise of turned-on current www.DataSheet4U.com Typical delay time Typical turn-off time SYMBOL dI/dt td tq TEST CONDITIONS Gate drive 20 V, 20 Ω, tr ≤ 1 µs TJ = TJ maximum, anode voltage ≤ 80 % VDRM Gate current 1 A, dIg/dt = 1 A/µs Vd = 0.67 % VDRM, TJ = 25 °C ITM = 550 A, TJ = TJ maximum, dI/dt = 40 A/µs, VR = 50 V, dV/dt = 20 V/µs, gate 0 V 100 Ω, tp = 500 µs VALUES 1000 1.0 µs 100 UNITS A/µs BLOCKING PARAMETER Maximum critical rate of rise of off-state voltage Maximum peak reverse and off-state leakage current SYMBOL dV/dt IRRM, IDRM TEST CONDITIONS TJ = TJ maximum linear to 80 % rated VDRM TJ = TJ maximum, rated VDRM/VRRM applied VALUES 500 50 UNITS V/µs mA www.vishay.com 2 For technical questions, contact: [email protected] Document Number: 94407 Revision: 11-Aug-08 ST330CPbF Series Phase Control Thyristors Vishay High Power Products (Hockey PUK Version), 720 A TRIGGERING PARAMETER Maximum peak gate power Maximum average gate power Maximum peak positive gate current Maximum peak positive gate voltage Maximum peak negative gate voltage SYMBOL PGM PG(AV) IGM + VGM - VGM TEST CONDITIONS TJ = TJ maximum, tp ≤ 5 ms TJ = TJ maximum, f = 50 Hz, d% = 50 TJ = TJ maximum, tp ≤ 5 ms TJ = TJ maximum, tp ≤ 5 ms TJ = - 40 °C DC gate current required to trigger IGT TJ = 25 °C TJ = 125 °C TJ = - 40 °C DC gate voltage required to trigger VGT TJ = 25 °C TJ = 125 °C DC gate current not to trigger IGD TJ = TJ maximum DC gate voltage not to trigger VGD Maximum gate current/voltage not to trigger is the maximum value which will not trigger any unit with rated VDRM anode to cathode applied Maximum required gate trigger/ current/voltage are the lowest value which will trigger all units 12 V anode to cathode applied 200 100 50 2.5 1.8 1.1 10 VALUES TYP. MAX. UNITS 10.0 2.0 3.0 20 5.0 200 3.0 - W A V mA V mA 0.25 V THERMAL AND MECHANICAL SPECIFICATIONS PARAMETER Maximum operating junction temperature range Maximum storage temperature range Maximum thermal resistance, junction to heatsink SYMBOL TJ TStg RthJ-hs DC operation single side cooled DC operation double side cooled DC operation single side cooled DC operation double side cooled TEST CONDITIONS VALUES - 40 to 125 - 40 to 150 0.09 0.04 0.02 0.01 9800 (1000) 83 See dimensions - link at the end of datasheet N (kg) g K/W UNITS °C www.DataSheet4U.com Maximum thermal resistance, case to heatsink Mounting force, ± 10 % Appr.


BUL3P5 ST330CPBF ST330S


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site.
(Privacy Policy & Contact)