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ST330S Dataheets PDF



Part Number ST330S
Manufacturers International Rectifier
Logo International Rectifier
Description PHASE CONTROL THYRISTORS
Datasheet ST330S DatasheetST330S Datasheet (PDF)

Previous Datasheet Index Next Data Sheet Bulletin I25156/B ST330S SERIES PHASE CONTROL THYRISTORS Stud Version Features Center amplifying gate Hermetic metal case with ceramic insulator International standard case TO-209AE (TO-118) Threaded studs UNF 3/4 - 16UNF2A or ISO M24x1.5 Compression Bonded Encapsulation for heavy duty operations such as severe thermal cycling 330A Typical Applications DC motor controls Controlled DC power supplies AC controllers Major Ratings and Characteristics w.

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Previous Datasheet Index Next Data Sheet Bulletin I25156/B ST330S SERIES PHASE CONTROL THYRISTORS Stud Version Features Center amplifying gate Hermetic metal case with ceramic insulator International standard case TO-209AE (TO-118) Threaded studs UNF 3/4 - 16UNF2A or ISO M24x1.5 Compression Bonded Encapsulation for heavy duty operations such as severe thermal cycling 330A Typical Applications DC motor controls Controlled DC power supplies AC controllers Major Ratings and Characteristics www.DataSheet4U.com Parameters ST330S 330 Units A °C A A A KA2s KA2s V µs °C IT(AV) @ TC IT(RMS) ITSM @ 50Hz @ 60Hz I 2t @ 50Hz @ 60Hz V DRM /V RRM tq TJ typical 75 520 9000 9420 405 370 400 to 1600 100 - 40 to 125 case style TO-209AE (TO-118) To Order Previous Datasheet ST330S Series ELECTRICAL SPECIFICATIONS Voltage Ratings Type number Voltage Code 04 08 ST330S 12 14 16 Index Next Data Sheet V DRM /V RRM , max. repetitive peak and off-state voltage V 400 800 1200 1400 1600 VRSM , maximum nonrepetitive peak voltage V 500 900 1300 1500 1700 I DRM /I RRM max. @ TJ = TJ max mA 50 On-state Conduction Parameter I T(AV) Max. average on-state current @ Case temperature I T(RMS) Max. RMS on-state current I TSM Max. peak, one-cycle non-repetitive surge current ST330S 330 75 520 9000 9420 7570 7920 Units Conditions A °C A DC @ 62°C case temperature t = 10ms A t = 8.3ms t = 10ms t = 8.3ms t = 10ms KA2s t = 8.3ms t = 10ms t = 8.3ms KA2√s No voltage reapplied 100% VRRM reapplied No voltage reapplied 100% VRRM reapplied Sinusoidal half wave, Initial TJ = TJ max. 180° conduction, half sine wave 12 I 2t Maximum I2t for fusing 405 370 287 262 www.DataSheet4U.com I 2√ t Maximum I2√t for fusing 4050 0.91 t = 0.1 to 10ms, no voltage reapplied (16.7% x π x IT(AV) < I < π x IT(AV)), TJ = TJ max. V T(TO)1 Low level value of threshold voltage V T(TO)2 High level value of threshold voltage rt1 rt2 V TM IH IL Low level value of on-state slope resistance High level value of on-state slope resistance Max. on-state voltage Maximum holding current Typical latching current V 0.92 (I > π x IT(AV)),TJ = TJ max. (16.7% x π x IT(AV) < I < π x IT(AV)), TJ2222222222222 = TJ max. mΩ 0.57 1.51 600 1000 mA T J = 25°C, anode supply 12V resistive load V (I > π x IT(AV)),TJ = TJ max. Ipk= 1040A, TJ = TJ max, tp = 10ms sine pulse 0.58 To Order Previous Datasheet ST330S Series Index Next Data Sheet Fig. 1 - Current Ratings Characteristics Fig. 2 - Current Ratings Characteristics www.DataSheet4U.com Fig. 3 - On-state Power Loss Characteristics Fig. 4 - On-state Power Loss Characteristics To Order Previous Datasheet Index Next Data Sheet ST330S Series Fig. 5 - Maximum Non-Repetitive Surge Current Fig. 6 - Maximum Non-Repetitive Surge Current www.DataSheet4U.com Fig. 7 - On-state Voltage Drop Characteristics Fig. 8 - Thermal Impedance Z thJC Characteristic To Order Previous Datasheet ST330S Series Index Next Data Sheet Fig. 9 - Gate Characteristics www.DataSheet4U.com To Order Previous Datasheet Switching Parameter di/dt Max. non-repetitive rate of rise of turned-on current Typical delay time Typical turn-off time Index Next Data Sheet ST330S Series ST330S 1000 1.0 Units Conditions A/µs Gate drive 20V, 20Ω, tr ≤ 1µs TJ = TJ max, anode voltage ≤ 80% VDRM Gate current A, di g /dt = 1A/µs Vd = 0.67% VDRM, TJ = 25°C ITM = 550A, TJ = TJ max, di/dt = 40A/µs, VR = 50V dv/dt = 20V/µs, Gate 0V 100Ω, tp = 500µs td tq µs 100 Blocking Parameter dv/dt IRRM IDRM Maximum critical rate of rise of off-state voltage Max. peak reverse and off-state leakage current ST330S 500 50 Units Conditions V/ µs mA TJ = TJ max. linear to 80% rated VDRM TJ = TJ max, rated V DRM/V RRM applied 23 Triggering Parameter PGM Maximum peak gate power ST330S 10.0 2.0 3.0 20 Units Conditions W A TJ = TJ max, t p ≤ 5ms TJ = TJ max, f = 50Hz, d% = 50 TJ = TJ max, t p ≤ 5ms PG(AV) Maximum average gate power IGM +VGM Max. peak positive gate current Maximum peak positive gate voltage www.DataSheet4U.com -VGM Maximum peak negative V 5.0 TYP. MAX. 200 3.0 10 0.25 mA V V mA TJ = TJ max, tp ≤ 5ms gate voltage IGT DC gate current required to trigger 200 100 50 TJ = - 40°C TJ = 25°C TJ = 125°C TJ = - 40°C TJ = 25°C TJ = 125°C Max. gate current/ voltage not to trigger is the max. value which will not trigger any unit with rated VDRM anode-to-cathode applied Max. required gate trigger/ current/ voltage are the lowest value which will trigger all units 12V anode-to-cathode applied VGT DC gate voltage required to trigger 2.5 1.8 1.1 IGD VGD DC gate current not to trigger DC gate voltage not to trigger TJ = TJ max To Order Previous Datasheet ST330S Series Thermal and Mechanical Specification Parameter TJ Tstg Max. operating temperature range Max. storage temperature range Index Next Data Sheet ST330S -40 to 125 -40 to 150 0.10 Units Conditions °C RthJC Max. thermal resistance, junction to case RthCS Max. thermal resistance, case to .


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