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ST333C Dataheets PDF



Part Number ST333C
Manufacturers International Rectifier
Logo International Rectifier
Description INVERTER GRADE THYRISTORS Hockey Puk Version
Datasheet ST333C DatasheetST333C Datasheet (PDF)

Previous Datasheet Index Next Data Sheet DISCRETE POWER DIODES and THYRISTORS DATA BOOK www.DataSheet4U.com To Order Previous Datasheet Index Next Data Sheet Bulletin I25187/A ST333C..L SERIES INVERTER GRADE THYRISTORS Features Metal case with ceramic insulator International standard case TO-200AC (B-PUK) All diffused design Center amplifying gate Guaranteed high dV/dt Guaranteed high dI/dt High surge current capability Low thermal impedance High speed performance Hockey Puk Version 6.

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Previous Datasheet Index Next Data Sheet DISCRETE POWER DIODES and THYRISTORS DATA BOOK www.DataSheet4U.com To Order Previous Datasheet Index Next Data Sheet Bulletin I25187/A ST333C..L SERIES INVERTER GRADE THYRISTORS Features Metal case with ceramic insulator International standard case TO-200AC (B-PUK) All diffused design Center amplifying gate Guaranteed high dV/dt Guaranteed high dI/dt High surge current capability Low thermal impedance High speed performance Hockey Puk Version 620A Typical Applications Inverters Choppers Induction heating All types of force-commutated converters case style TO-200AC (B-PUK) Major Ratings and Characteristics www.DataSheet4U.com Parameters ST333C..L 620 Units A °C A °C A A KA2s KA2s V µs °C IT(AV) @ Ths IT(RMS) @ Ths ITSM @ 50Hz @ 60Hz I 2t @ 50Hz @ 60Hz V DRM /V RRM tq range TJ 55 1230 25 11000 11500 605 553 400 to 800 10 to 30 - 40 to 125 To Order Previous Datasheet ST333C..L Series ELECTRICAL SPECIFICATIONS Voltage Ratings Voltage Type number Code Index Next Data Sheet V DRM /V RRM , maximum repetitive peak voltage V VRSM , maximum non-repetitive peak voltage V 500 I DRM /I RRM max. @ TJ = TJ max. mA 50 04 ST333C..L 08 400 800 900 Current Carrying Capability Frequency 180oel 50Hz 400Hz 1000Hz 2500Hz Recovery voltage Vr Voltage before turn-on Vd Rise of on-state current di/dt Heatsink temperature Equivalent values for RC circuit 1430 1670 1080 530 50 V DRM 50 40 ITM 180oel 1250 1170 880 400 50 50 55 2340 2310 2090 1190 50 V DRM 40 ITM 100µs 1940 2010 1800 990 50 55 6310 3440 2040 990 50 V DRM 40 ITM Units 5620 5030 1750 800 50 55 A V A/ µ s °C 10 Ω / 0.47µF 10 Ω / 0.47µF 10 Ω / 0.47µF www.DataSheet4U.com On-state Conduction Parameter I T(AV) Max. average on-state current @ Heatsink temperature I T(RMS) Max. RMS on-state current I TSM Max. peak, one half cycle, non-repetitive surge current ST333C..L 620 (305) 55 (75) 1230 11000 11500 9250 9700 Units Conditions A °C 180° conduction, half sine wave double side (single side) cooled DC @ 25°C heatsink temperature double side cooled t = 10ms A t = 8.3ms t = 10ms t = 8.3ms t = 10ms t = 8.3ms KA2s t = 10ms t = 8.3ms KA2√s No voltage reapplied 100% VRRM reapplied No voltage reapplied 100% VRRM reapplied Sinusoidal half wave, Initial TJ = TJ max I 2t Maximum I2t for fusing 605 553 428 391 I 2√ t Maximum I2√t for fusing 6050 t = 0.1 to 10ms, no voltage reapplied To Order Previous Datasheet ST333C..L Series Index Next Data Sheet Fig. 3 - Current Ratings Characteristics Fig. 4 - Current Ratings Characteristics www.DataSheet4U.com Fig. 5 - On-state Power Loss Characteristics Fig. 6 - On-state Power Loss Characteristics Fig. 7 - Maximum Non-repetitive Surge Current To Order Fig. 8 - Maximum Non-repetitive Surge Current Previous Datasheet Index Next Data Sheet ST333C..L Series Fig. 9 - On-state Voltage Drop Characteristics Fig. 10 - Thermal Impedance ZthJ-hs Characteristics www.DataSheet4U.com Fig. 11 - Reverse Recovered Charge Characteristics Fig. 12 - Reverse Recovery Current Characteristics Fig 13 - Frequency Characteristics To Order Previous Datasheet ST333C..L Series Index Next Data Sheet Fig. 14 - Frequency Characteristics www.DataSheet4U.com Fig. 15 - Frequency Characteristics Fig. 16 - Maximum On-state Energy Power Loss Characteristics To Order Previous Datasheet 10 0 Index ( 1) ( 2) ( 3) ( 4) (a ) PG PG PG PG M M M M = = = = Next Data Sheet Series ST333C..L 10W , 20W , 4 0W , 60W , tp tp tp tp = = = = 20m s 10m s 5m s 3 .3 m s In st a n t a n e o u s G a t e V o lt a g e ( V ) 10 Re c ta n g u la r g a t e p u lse a ) Re c o m m e n d e d lo a d lin e fo r ra t e d d i/ d t : 2 0 V , 1 0 o h m s; t r< = 1 µ s b ) Re c o m m e n d e d lo a d lin e fo r < = 3 0 % ra t e d d i/ d t : 1 0 V , 10 o h m s t r< = 1 µ s (b ) Tj= -40 °C Tj= 25 °C Tj= 125 °C 1 VGD IG D ( 1) (2) (3 ) (4 ) D e v ic e : ST33 3 C ..L Se rie s Fre q u e n c y Lim ite d b y PG ( A V ) 0.1 0.0 01 0.01 0.1 1 10 100 In st a n ta n e o u s G a te C u rre n t ( A ) Fig. 17 - Gate Characteristics www.DataSheet4U.com To Order Previous Datasheet On-state Conduction Parameter V TM Max. peak on-state voltage voltage V T(TO)2 High level value of threshold voltage rt1 rt2 IH IL Low level value of forward slope resistance High level value of forward slope resistance Maximum holding current Typical latching current Index Next Data Sheet Series ST333C..L ST333C..L 1.96 0.91 0.93 0.58 Units Conditions ITM= 1810A, TJ = TJ max, tp = 10ms sine wave pulse V T(TO)1 Low level value of threshold V (16.7% x π x IT(AV) < I < π x IT(AV)), TJ = TJ max. (I > π x IT(AV)), TJ = TJ max. (16.7% x π x IT(AV) < I < π x IT(AV)), TJ = TJ max. (I > π x IT(AV)), TJ = TJ max. mΩ 0.58 600 1000 mA T J = 25°C, I T > 30A T J = 25°C, V A= 12V, Ra = 6 Ω, I G= 1A Switching Parameter di/dt Max. non-repetitive rate of rise of turned-on current td tq Typical delay time Max. turn-off time Min 10 .


ST3311 ST333C ST333C


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