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DISCRETE POWER DIODES and THYRISTORS
DATA BOOK
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Next Data Sheet Bulletin I25187/A
ST333C..L SERIES
INVERTER GRADE THYRISTORS Features
Metal case with ceramic insulator International standard case TO-200AC (B-PUK) All diffused design Center amplifying gate Guaranteed high dV/dt Guaranteed high dI/dt High surge current capability Low thermal impedance High speed performance
Hockey Puk Version
620A
Typical Applications
Inverters Choppers Induction heating All types of force-commutated converters
case style TO-200AC (B-PUK)
Major Ratings and Characteristics
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Parameters
ST333C..L
620
Units
A °C A °C A A KA2s KA2s V µs
°C
IT(AV) @ Ths IT(RMS) @ Ths ITSM @ 50Hz @ 60Hz I 2t @ 50Hz @ 60Hz V DRM /V RRM tq range TJ
55 1230 25 11000 11500 605 553 400 to 800 10 to 30 - 40 to 125
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ELECTRICAL SPECIFICATIONS Voltage Ratings
Voltage Type number Code
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V DRM /V RRM , maximum repetitive peak voltage V
VRSM , maximum non-repetitive peak voltage V
500
I DRM /I RRM max.
@ TJ = TJ max.
mA
50
04 ST333C..L 08
400 800
900
Current Carrying Capability
Frequency
180oel 50Hz 400Hz 1000Hz 2500Hz Recovery voltage Vr Voltage before turn-on Vd Rise of on-state current di/dt Heatsink temperature Equivalent values for RC circuit 1430 1670 1080 530 50 V DRM 50 40
ITM 180oel 1250 1170 880 400 50 50 55 2340 2310 2090 1190 50 V DRM 40
ITM 100µs 1940 2010 1800 990 50 55 6310 3440 2040 990 50 V DRM 40
ITM
Units
5620 5030 1750 800 50 55
A
V A/ µ s °C
10 Ω / 0.47µF
10 Ω / 0.47µF
10 Ω / 0.47µF
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On-state Conduction
Parameter
I T(AV) Max. average on-state current @ Heatsink temperature I T(RMS) Max. RMS on-state current I TSM Max. peak, one half cycle, non-repetitive surge current
ST333C..L
620 (305) 55 (75) 1230 11000 11500 9250 9700
Units Conditions
A °C 180° conduction, half sine wave double side (single side) cooled DC @ 25°C heatsink temperature double side cooled t = 10ms A t = 8.3ms t = 10ms t = 8.3ms t = 10ms t = 8.3ms KA2s t = 10ms t = 8.3ms KA2√s No voltage reapplied 100% VRRM reapplied No voltage reapplied 100% VRRM reapplied Sinusoidal half wave, Initial TJ = TJ max
I 2t
Maximum I2t for fusing
605 553 428 391
I 2√ t
Maximum I2√t for fusing
6050
t = 0.1 to 10ms, no voltage reapplied
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Fig. 3 - Current Ratings Characteristics
Fig. 4 - Current Ratings Characteristics
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Fig. 5 - On-state Power Loss Characteristics
Fig. 6 - On-state Power Loss Characteristics
Fig. 7 - Maximum Non-repetitive Surge Current
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Fig. 8 - Maximum Non-repetitive Surge Current
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Fig. 9 - On-state Voltage Drop Characteristics
Fig. 10 - Thermal Impedance ZthJ-hs Characteristics
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Fig. 11 - Reverse Recovered Charge Characteristics
Fig. 12 - Reverse Recovery Current Characteristics
Fig 13 - Frequency Characteristics
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Fig. 14 - Frequency Characteristics
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Fig. 15 - Frequency Characteristics
Fig. 16 - Maximum On-state Energy Power Loss Characteristics
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10 0
Index
( 1) ( 2) ( 3) ( 4) (a ) PG PG PG PG M M M M = = = =
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10W , 20W , 4 0W , 60W , tp tp tp tp = = = = 20m s 10m s 5m s 3 .3 m s
In st a n t a n e o u s G a t e V o lt a g e ( V )
10
Re c ta n g u la r g a t e p u lse a ) Re c o m m e n d e d lo a d lin e fo r ra t e d d i/ d t : 2 0 V , 1 0 o h m s; t r< = 1 µ s b ) Re c o m m e n d e d lo a d lin e fo r < = 3 0 % ra t e d d i/ d t : 1 0 V , 10 o h m s t r< = 1 µ s (b )
Tj= -40 °C
Tj= 25 °C
Tj= 125 °C
1 VGD IG D
( 1)
(2)
(3 ) (4 )
D e v ic e : ST33 3 C ..L Se rie s Fre q u e n c y Lim ite d b y PG ( A V ) 0.1 0.0 01 0.01 0.1 1 10 100
In st a n ta n e o u s G a te C u rre n t ( A )
Fig. 17 - Gate Characteristics
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On-state Conduction
Parameter
V TM Max. peak on-state voltage voltage V T(TO)2 High level value of threshold voltage rt1 rt2 IH IL Low level value of forward slope resistance High level value of forward slope resistance Maximum holding current Typical latching current
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ST333C..L
1.96 0.91 0.93 0.58
Units
Conditions
ITM= 1810A, TJ = TJ max, tp = 10ms sine wave pulse
V T(TO)1 Low level value of threshold
V
(16.7% x π x IT(AV) < I < π x IT(AV)), TJ = TJ max. (I > π x IT(AV)), TJ = TJ max. (16.7% x π x IT(AV) < I < π x IT(AV)), TJ = TJ max. (I > π x IT(AV)), TJ = TJ max.
mΩ 0.58 600 1000 mA
T J = 25°C, I T > 30A T J = 25°C, V A= 12V, Ra = 6 Ω, I G= 1A
Switching
Parameter
di/dt Max. non-repetitive rate of rise of turned-on current td tq Typical delay time Max. turn-off time Min 10
.