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ST333S Dataheets PDF



Part Number ST333S
Manufacturers International Rectifier
Logo International Rectifier
Description INVERTER GRADE THYRISTORS Stud Version
Datasheet ST333S DatasheetST333S Datasheet (PDF)

Previous Datasheet Index Next Data Sheet DISCRETE POWER DIODES and THYRISTORS DATA BOOK www.DataSheet4U.com D-500 To Order Previous Datasheet Index Next Data Sheet Bulletin I25171/B ST333S SERIES INVERTER GRADE THYRISTORS Stud Version Features All diffused design Center amplifying gate Guaranteed high dv/dt Guaranteed high di/dt High surge current capability Low thermal impedance High speed performance 330A Typical Applications Inverters Choppers Induction heating All types of forc.

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Previous Datasheet Index Next Data Sheet DISCRETE POWER DIODES and THYRISTORS DATA BOOK www.DataSheet4U.com D-500 To Order Previous Datasheet Index Next Data Sheet Bulletin I25171/B ST333S SERIES INVERTER GRADE THYRISTORS Stud Version Features All diffused design Center amplifying gate Guaranteed high dv/dt Guaranteed high di/dt High surge current capability Low thermal impedance High speed performance 330A Typical Applications Inverters Choppers Induction heating All types of force-commutated converters Major Ratings and Characteristics Parameters www.DataSheet4U.com I T(AV) ST333S 330 Units A °C A A A KA2s KA2s V µs °C @ TC IT(RMS) ITSM @ 50Hz @ 60Hz I2t @ 50Hz @ 60Hz V DRM /V RRM tq range TJ 75 518 11000 11520 605 550 400 to 800 10 to 30 - 40 to 125 case style TO-209AE (TO-118) D-501 To Order Previous Datasheet Index Next Data Sheet ST333S Series ELECTRICAL SPECIFICATIONS Voltage Ratings Voltage Type number Code V DRM /V RRM , maximum repetitive peak voltage V ST333S 04 08 400 800 VRSM , maximum non-repetitive peak voltage V 500 900 I DRM /I RRM max. @ TJ = TJ max. mA 50 Current Carrying Capability Frequency 180 el 50Hz 400Hz 1000Hz 2500Hz Recovery voltage Vr Voltage before turn-on Vd Rise of on-state current di/dt Case temperature Equivalent values for RC circuit 840 650 430 140 50 V DRM 50 50 o ITM 180 el 600 450 230 60 50 50 75 1280 1280 1090 490 50 V DRM 50 o ITM 100µs 1040 910 730 250 50 75 5430 2150 1080 400 50 V DRM 50 ITM Units 4350 1560 720 190 50 75 V A/ µ s °C A 10 Ω / 0.47µF 10 Ω / 0.47µF 10 Ω / 0.47µF On-state Conduction Parameter ST333S 330 75 518 11000 11520 9250 9700 I2 t Maximum I2t for fusing 605 550 430 390 I 2√ t Maximum I2√t for fusing 6050 KA2√s KA2s A Units A °C Conditions 180° conduction, half sine wave www.DataSheet4U.com I T(AV) Max. average on-state current @ Case temperature I T(RMS) Max. RMS on-state current I TSM Max. peak, one half cycle, non-repetitive surge current DC @ 63°C case temperature t = 10ms t = 8.3ms t = 10ms t = 8.3ms t = 10ms t = 8.3ms t = 10ms t = 8.3ms No voltage reapplied 100% VRRM reapplied No voltage reapplied 100% VRRM reapplied Sinusoidal half wave, Initial TJ = TJ max t = 0.1 to 10ms, no voltage reapplied D-502 To Order Previous Datasheet Index Next Data Sheet ST333S Series Fig. 1 - Current Ratings Characteristics Fig. 2 - Current Ratings Characteristics www.DataSheet4U.com Fig. 3 - On-state Power Loss Characteristics Fig. 4 - On-state Power Loss Characteristics D-506 To Order Previous Datasheet Index Next Data Sheet ST333S Series Fig. 5 - Maximum Non-repetitive Surge Current Fig. 6 - Maximum Non-repetitive Surge Current www.DataSheet4U.com Fig. 7 - On-state Voltage Drop Characteristics Fig. 8 - Thermal Impedance ZthJC Characteristic Fig. 9 - Reverse Recovered Charge Characteristics Fig. 10 - Reverse Recovery Current Characteristics D-507 To Order Previous Datasheet Index Next Data Sheet ST333S Series Fig. 11 - Frequency Characteristics www.DataSheet4U.com Fig. 12 - Frequency Characteristics Fig. 13 - Frequency Characteristics D-508 To Order Previous Datasheet Index Next Data Sheet ST333S Series Fig. 14 - Maximum On-state Energy Power Loss Characteristics www.DataSheet4U.com Fig. 15 - Gate Characteristics D-509 To Order Previous Datasheet Index Next Data Sheet ST333S Series On-state Conduction Parameter V TM Max. peak on-state voltage voltage V T(TO)2 High level value of threshold voltage r r t1 ST333S 1.51 0.91 0.92 0.58 Units Conditions ITM= 1040A, TJ = TJ max, t = 10ms sine wave pulse p V T(TO)1 Low level value of threshold V (16.7% x π x IT(AV) < I < π x IT(AV)), TJ = TJ max. (I > π x IT(AV)), TJ = TJ max. (16.7% x π x IT(AV) < I < π x IT(AV)), TJ = TJ max. (I > π x IT(AV)), TJ = TJ max. Low level value of forward slope resistance High level value of forward slope resistance Maximum holding current Typical latching current mΩ 0.58 600 1000 mA t2 IH IL T J = 25°C, I T > 30A T J = 25°C, V A= 12V, Ra = 6 Ω, I G = 1A Switching Parameter di/dt Max. non-repetitive rate of rise of turned-on current t d ST333S 1000 1.0 Min 10 Max 30 Units A/µs Conditions TJ = TJ max, VDRM = rated VDRM ITM = 2 x di/dt TJ= 25°C, VDM = rated VDRM, ITM = 50A DC, t = 1µs Resistive load, Gate pulse: 10V, 5Ω source p Typical delay time µs TJ = TJ max, ITM = 550A, commutating di/dt = 40A/µs VR = 50V, t = 500µs, dv/dt: see table in device code p t q Max. turn-off time Blocking Parameter dv/dt IRRM IDRM Maximum critical rate of rise of off-state voltage Max. peak reverse and off-state leakage current ST333S 500 50 Units V/ µ s mA Conditions TJ = TJ max. linear to 80% VDRM, higher value available on request TJ = TJ max, rated V DRM/V RRM applied www.DataSheet4U.com Triggering Parameter PGM Maximum peak gate power ST333S 60 10 10 20 Units W A Conditions TJ = TJ max, f = 50Hz, d% = 50 TJ = TJ max, t ≤ 5ms p PG(AV) Maximum average gate power IGM +VGM -VGM IGT VGT IGD.


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