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DISCRETE POWER DIODES and THYRISTORS
DATA BOOK
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Bulletin I25171/B
ST333S SERIES
INVERTER GRADE THYRISTORS Stud Version
Features
All diffused design Center amplifying gate Guaranteed high dv/dt Guaranteed high di/dt High surge current capability Low thermal impedance High speed performance
330A
Typical Applications
Inverters Choppers Induction heating All types of force-commutated converters
Major Ratings and Characteristics
Parameters
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T(AV)
ST333S
330
Units
A °C A A A KA2s KA2s V µs °C
@ TC IT(RMS) ITSM @ 50Hz @ 60Hz I2t @ 50Hz @ 60Hz V DRM /V RRM tq range TJ
75 518 11000 11520 605 550 400 to 800 10 to 30 - 40 to 125
case style TO-209AE (TO-118)
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ST333S Series
ELECTRICAL SPECIFICATIONS Voltage Ratings
Voltage Type number Code V DRM /V RRM , maximum repetitive peak voltage V
ST333S 04 08 400 800
VRSM , maximum non-repetitive peak voltage V
500 900
I DRM /I RRM max.
@ TJ = TJ max.
mA
50
Current Carrying Capability
Frequency
180 el 50Hz 400Hz 1000Hz 2500Hz Recovery voltage Vr Voltage before turn-on Vd Rise of on-state current di/dt Case temperature Equivalent values for RC circuit 840 650 430 140 50 V DRM 50 50
o
ITM 180 el 600 450 230 60 50 50 75 1280 1280 1090 490 50 V DRM 50
o
ITM 100µs 1040 910 730 250 50 75 5430 2150 1080 400 50 V DRM 50
ITM
Units
4350 1560 720 190 50 75 V A/ µ s °C A
10 Ω / 0.47µF
10 Ω / 0.47µF
10 Ω / 0.47µF
On-state Conduction
Parameter ST333S
330 75 518 11000 11520 9250 9700 I2 t Maximum I2t for fusing 605 550 430 390 I 2√ t Maximum I2√t for fusing 6050 KA2√s KA2s A
Units
A °C
Conditions
180° conduction, half sine wave
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I T(AV)
Max. average on-state current @ Case temperature
I T(RMS) Max. RMS on-state current I TSM Max. peak, one half cycle, non-repetitive surge current
DC @ 63°C case temperature t = 10ms t = 8.3ms t = 10ms t = 8.3ms t = 10ms t = 8.3ms t = 10ms t = 8.3ms No voltage reapplied 100% VRRM reapplied No voltage reapplied 100% VRRM reapplied Sinusoidal half wave, Initial TJ = TJ max
t = 0.1 to 10ms, no voltage reapplied
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ST333S Series
Fig. 1 - Current Ratings Characteristics
Fig. 2 - Current Ratings Characteristics
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Fig. 3 - On-state Power Loss Characteristics
Fig. 4 - On-state Power Loss Characteristics
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ST333S Series
Fig. 5 - Maximum Non-repetitive Surge Current
Fig. 6 - Maximum Non-repetitive Surge Current
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Fig. 7 - On-state Voltage Drop Characteristics Fig. 8 - Thermal Impedance ZthJC Characteristic
Fig. 9 - Reverse Recovered Charge Characteristics
Fig. 10 - Reverse Recovery Current Characteristics
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ST333S Series
Fig. 11 - Frequency Characteristics
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Fig. 12 - Frequency Characteristics
Fig. 13 - Frequency Characteristics
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ST333S Series
Fig. 14 - Maximum On-state Energy Power Loss Characteristics
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Fig. 15 - Gate Characteristics
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ST333S Series
On-state Conduction
Parameter
V TM Max. peak on-state voltage voltage V T(TO)2 High level value of threshold voltage r r
t1
ST333S
1.51 0.91 0.92 0.58
Units
Conditions
ITM= 1040A, TJ = TJ max, t = 10ms sine wave pulse
p
V T(TO)1 Low level value of threshold
V
(16.7% x π x IT(AV) < I < π x IT(AV)), TJ = TJ max. (I > π x IT(AV)), TJ = TJ max. (16.7% x π x IT(AV) < I < π x IT(AV)), TJ = TJ max. (I > π x IT(AV)), TJ = TJ max.
Low level value of forward slope resistance High level value of forward slope resistance Maximum holding current Typical latching current mΩ 0.58 600 1000 mA
t2
IH IL
T J = 25°C, I T > 30A T J = 25°C, V A= 12V, Ra = 6 Ω, I G = 1A
Switching
Parameter
di/dt Max. non-repetitive rate of rise of turned-on current t
d
ST333S
1000 1.0 Min 10 Max 30
Units
A/µs
Conditions
TJ = TJ max, VDRM = rated VDRM ITM = 2 x di/dt TJ= 25°C, VDM = rated VDRM, ITM = 50A DC, t = 1µs Resistive load, Gate pulse: 10V, 5Ω source
p
Typical delay time
µs
TJ = TJ max, ITM = 550A, commutating di/dt = 40A/µs VR = 50V, t = 500µs, dv/dt: see table in device code
p
t
q
Max. turn-off time
Blocking
Parameter
dv/dt IRRM IDRM Maximum critical rate of rise of off-state voltage Max. peak reverse and off-state leakage current
ST333S
500 50
Units
V/ µ s mA
Conditions
TJ = TJ max. linear to 80% VDRM, higher value available on request TJ = TJ max, rated V DRM/V RRM applied
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Triggering
Parameter
PGM Maximum peak gate power
ST333S
60 10 10 20
Units
W A
Conditions
TJ = TJ max, f = 50Hz, d% = 50 TJ = TJ max, t ≤ 5ms
p
PG(AV) Maximum average gate power IGM +VGM -VGM IGT VGT IGD.