RADIATION HARDENED POWER MOSFET
PD - 91798A
RADIATION HARDENED POWER MOSFET SURFACE MOUNT(SMD-3)
Product Summary
Part Number Radiation Level IRHNB7260 ...
Description
PD - 91798A
RADIATION HARDENED POWER MOSFET SURFACE MOUNT(SMD-3)
Product Summary
Part Number Radiation Level IRHNB7260 100K Rads (Si) IRHNB3260 300K Rads (Si) IRHNB4260 600K Rads (Si) IRHNB8260 1000K Rads (Si) R DS(on) 0.070Ω 0.070Ω 0.070Ω 0.070Ω ID 43A 43A 43A 43A
IRHNB7260 200V, N-CHANNEL
RAD Hard HEXFET TECHNOLOGY
™ ®
SMD-3
International Rectifier’s RADHard HEXFET® technology provides high performance power MOSFETs for space applications. This technology has over a decade of proven performance and reliability in satellite applications. These devices have been characterized for both Total Dose and Single Event Effects (SEE). The combination of low Rdson and low gate charge reduces the power losses in switching applications such as DC to DC converters and motor control. These devices retain all of the well established advantages of MOSFETs such as voltage control, fast switching, ease of paralleling and temperature stability of electrical parameters.
Features:
n n n n n n n n n
Single Event Effect (SEE) Hardened Low RDS(on) Low Total Gate Charge Proton Tolerant Simple Drive Requirements Ease of Paralleling Hermetically Sealed Surface Mount Light Weight
Absolute Maximum Ratings
www.DataSheet4U.com ID @ VGS = 12V, TC = 25°C ID @ VGS = 12V, TC = 100°C IDM PD @ TC = 25°C VGS EAS IAR EAR dv/dt TJ T STG
Pre-Irradiation
Units
43 27 172 300 2.4 ±20 500 43 30 5.7 -55 to 150 300 (for 5 Sec.) 3.5 (Typical )
Parameter
Continuous Drain Current Continuous Drain Current Pulsed Drai...
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