Document
PD - 91741A
RADIATION HARDENED POWER MOSFET SURFACE MOUNT (SMD-3)
Product Summary
Part Number IRHNB7460SE Radiation Level RDS(on) 100K Rads (Si) 0.32Ω ID 20A
IRHNB7460SE 500V, N-CHANNEL
RAD Hard HEXFET TECHNOLOGY
®
SMD-3
International Rectifiers RADHardTM HEXFET® MOSFET technology provides high performance power MOSFETs for space applications. This technology has over a decade of proven performance and reliability in satellite applications. These devices have been characterized for both Total Dose and Single Event Effects (SEE). The combination of low RDS(on) and low gate charge reduces the power losses in switching applications such as DC to DC converters and motor control. These devices retain all of the well established advantages of MOSFETs such as voltage control, fast switching, ease of paralleling and temperature stability of electrical parameters.
Features:
! ! ! ! ! ! ! ! !
Single Event Effect (SEE) Hardened Ultra Low RDS(on) Low Total Gate Charge Proton Tolerant Simple Drive Requirements Ease of Paralleling Hermetically Sealed Surface Mount Light Weight
Absolute Maximum Ratings
www.DataSheet4U.com ID @ VGS = 12V, TC = 25°C ID @ VGS = 12V, TC = 100°C IDM PD @ TC = 25°C VGS EAS IAR EAR dv/dt TJ TSTG
Pre-Irradiation
Units
20 12 80 300 2.4 ±20 500 20 30 3.8 -55 to 150 300 (for 5 sec.) 3.5(Typical)
Parameter
Continuous Drain Current Continuous Drain Current Pulsed Drain Current ➀ Max. Power Dissipation Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalanche Energy ➁ Avalanche Current ➀ Repetitive Avalanche Energy ➀ Peak Diode Recovery dv/dt ➂ Operating Junction Storage Temperature Range Package Mounting Surface Temperature Weight
A
W
W/°C
V mJ A mJ V/ns
o
C
g
For footnotes refer to the last page
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1
6/4/01
IRHNB7460SE
Pre-Irradiation
@ Tj = 25°C (Unless Otherwise Specified) Min
500 2.5 60
Electrical Characteristics
Parameter
Typ Max Units
0.66 4.0 0.32 0.36 4.5 50 250 100 -100 220 50 110 35 100 100 100 V V/°C Ω V S( ) µA
Ω
Test Conditions
VGS = 0V, ID = 1.0mA Reference to 25°C, ID = 1.0mA VGS = 12V, ID = 12A ➃ VGS = 12V, ID = 20A VDS = VGS, ID = 1.0mA VDS > 15V, IDS = 12A ➃ VDS= 400V ,VGS=0V VDS = 400V, VGS = 0V, TJ = 125°C VGS = 20V VGS = -20V VGS =12V, ID = 20A VDS = 250V VDD =250V, ID =20A, VGS =12V, RG = 2.35Ω
BVDSS Drain-to-Source Breakdown Voltage ∆ BV DSS / ∆ TJ Temperature Coefficient of Breakdown Voltage RDS(on) Static Drain-to-Source On-State Resistance VGS(th) Gate Threshold Voltage gfs Forward Transconductance IDSS Zero Gate Voltage Drain Current
IGSS IGSS Qg Q gs Qgd td(on) tr td(off) tf LS + LD
Gate-to-Source Leakage Forward Gate-to-Source Leakage Reverse Total Gate Charge Gate-to-Source Charge Gate-to-Drain (Miller) Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Inductance
nA nC
ns nH
Measured from the center of drain pad to center of source pad VGS = 0V, VDS = 25V f = 1.0MHz
Ciss C oss C rss
Input Capacitance Output Capacitance Reverse Transfer Capacitance
3500 730 260
pF
www.DataSheet4U.com IS ISM VSD t rr Q RR ton
Source-Drain Diode Ratings and Characteristics
Parameter
Continuous Source Current (Body Diode) Pulse Source Current (Body Diode) ➀ Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Forward Turn-On Time
Min Typ Max Units
20 80 1.8 800 16
Test Conditions
A
V nS µC Tj = 25°C, IS = 20A, VGS = 0V ➃ Tj = 25°C, IF = 20A, di/dt ≤ 100A/µs VDD ≤ 50V ➃
Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by LS + LD.
Thermal Resistance
Parameter
RthJC RthJ-PCB Junction-to-Case Junction-to-PC board
M i n Typ Max Units
1.6 0.42
°C/W
Test Conditions
Soldered to a 2 inch square clad PC board
Note: Corresponding Spice and Saber models are available on the G&S Website. For footnotes refer to the last page
2
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Pre-Irradiation
IRHNB7460SE
International Rectifier Radiation Hardened MOSFETs are tested to verify their radiation hardness capability. The hardness assurance program at International Rectifier is comprised of two radiation environments. Every manufacturing lot is tested for total ionizing dose (per notes 5 and 6) using the TO-3 package. Both pre- and post-irradiation performance are tested and specified using the same drive circuitry and test conditions in order to provide a direct comparison.
Table 1. Electrical Characteristics @ Tj = 25°C, Post Total Dose Irradiation ➄➅
Parameter
BVDSS V/5JD IGSS IGSS IDSS RDS(on) RDS(on) VSD Drain-to-Source Breakdown Voltage Gate Threshold Voltage Gate-to-Source Leakage Forward Gate-to-Source Leakage Reverse Zero Gate Voltage Drain Current Static Drain-to-Source# $ On-State Resistance (TO-3) Static Drain-to-Source# $ On-State Resistance (SMD-3) Diode Forward Voltage# $
Min
500 2.0
100K Rads (Si)
Max
4.5 100 -100 50 0.32 0.32 1.8
Units
V nA µA Ω Ω V
Test Conditions "
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