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2SK2887 Datasheet, Equivalent, Silicon MOSFET.N-Channel Silicon MOSFET N-Channel Silicon MOSFET |
Part | 2SK2887 |
---|---|
Description | N-Channel Silicon MOSFET |
Feature | SMD Type
N-Channel Silicon MOSFET 2SK288 7
IC MOSFET
Features
Low on-resistanc e. Fast switching speed. Wide SOA (safe operating area). +0. 2 9. 70-0. 2 +0. 15 6 . 50-0. 15 +0. 2 5. 30-0. 2 TO-252 +0. 15 1. 50-0. 15 +0. 1 2. 30-0. 1 +0. 8 0. 50-0. 7 Un it: mm +0. 1 0. 80-0. 1 +0. 28 1. 50-0. 1 +0. 25 2. 65-0. 1 Easy to parallel. 2. 3 + 0. 15 4. 60-0. 15 +0. 15 0. 50-0. 15 Easily designed drive circuits. 0. 127 max + 0. 15 5. 55-0. 15 +0. 1 0. 60-0. 1 1 Gate 2 Drain 3 Source Absolute Maximum Ratin gs Ta = 25 Parameter Drain to source vo ltage Gate to source voltage Drain curr ent Power dissipation Channel temperatu re Storage tem . |
Manufacture | Guangdong Kexin Industrial |
Datasheet |
Part | 2SK2887 |
---|---|
Description | N-Channel Silicon MOSFET |
Feature | SMD Type
N-Channel Silicon MOSFET 2SK288 7
IC MOSFET
Features
Low on-resistanc e. Fast switching speed. Wide SOA (safe operating area). +0. 2 9. 70-0. 2 +0. 15 6 . 50-0. 15 +0. 2 5. 30-0. 2 TO-252 +0. 15 1. 50-0. 15 +0. 1 2. 30-0. 1 +0. 8 0. 50-0. 7 Un it: mm +0. 1 0. 80-0. 1 +0. 28 1. 50-0. 1 +0. 25 2. 65-0. 1 Easy to parallel. 2. 3 + 0. 15 4. 60-0. 15 +0. 15 0. 50-0. 15 Easily designed drive circuits. 0. 127 max + 0. 15 5. 55-0. 15 +0. 1 0. 60-0. 1 1 Gate 2 Drain 3 Source Absolute Maximum Ratin gs Ta = 25 Parameter Drain to source vo ltage Gate to source voltage Drain curr ent Power dissipation Channel temperatu re Storage tem . |
Manufacture | Guangdong Kexin Industrial |
Datasheet |
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