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2SK2887 Datasheet, Equivalent, Silicon MOSFET.

N-Channel Silicon MOSFET

N-Channel Silicon MOSFET

 

 

 

Part 2SK2887
Description N-Channel Silicon MOSFET
Feature SMD Type N-Channel Silicon MOSFET 2SK288 7 IC MOSFET Features Low on-resistanc e.
Fast switching speed.
Wide SOA (safe operating area).
+0.
2 9.
70-0.
2 +0.
15 6 .
50-0.
15 +0.
2 5.
30-0.
2 TO-252 +0.
15 1.
50-0.
15 +0.
1 2.
30-0.
1 +0.
8 0.
50-0.
7 Un it: mm +0.
1 0.
80-0.
1 +0.
28 1.
50-0.
1 +0.
25 2.
65-0.
1 Easy to parallel.
2.
3 + 0.
15 4.
60-0.
15 +0.
15 0.
50-0.
15 Easily designed drive circuits.
0.
127 max + 0.
15 5.
55-0.
15 +0.
1 0.
60-0.
1 1 Gate 2 Drain 3 Source Absolute Maximum Ratin gs Ta = 25 Parameter Drain to source vo ltage Gate to source voltage Drain curr ent Power dissipation Channel temperatu re Storage tem .
Manufacture Guangdong Kexin Industrial
Datasheet
Download 2SK2887 Datasheet
Part 2SK2887
Description N-Channel Silicon MOSFET
Feature SMD Type N-Channel Silicon MOSFET 2SK288 7 IC MOSFET Features Low on-resistanc e.
Fast switching speed.
Wide SOA (safe operating area).
+0.
2 9.
70-0.
2 +0.
15 6 .
50-0.
15 +0.
2 5.
30-0.
2 TO-252 +0.
15 1.
50-0.
15 +0.
1 2.
30-0.
1 +0.
8 0.
50-0.
7 Un it: mm +0.
1 0.
80-0.
1 +0.
28 1.
50-0.
1 +0.
25 2.
65-0.
1 Easy to parallel.
2.
3 + 0.
15 4.
60-0.
15 +0.
15 0.
50-0.
15 Easily designed drive circuits.
0.
127 max + 0.
15 5.
55-0.
15 +0.
1 0.
60-0.
1 1 Gate 2 Drain 3 Source Absolute Maximum Ratin gs Ta = 25 Parameter Drain to source vo ltage Gate to source voltage Drain curr ent Power dissipation Channel temperatu re Storage tem .
Manufacture Guangdong Kexin Industrial
Datasheet
Download 2SK2887 Datasheet

2SK2887

2SK2887
2SK2887

2SK2887

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