HGTG40N60C3
Data Sheet December 2001
75A, 600V, UFS Series N-Channel IGBT
The HGTG40N60C3 is a MOS gated high voltage s...
HGTG40N60C3
Data Sheet December 2001
75A, 600V, UFS Series N-Channel IGBT
The HGTG40N60C3 is a MOS gated high voltage switching device combining the best features of a MOSFET and a bipolar
transistor. These devices have the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar
transistor. The much lower on-state voltage drop varies only moderately between 25oC and 150oC. The IGBT is ideal for many high voltage switching applications operating at moderate frequencies where low conduction losses are essential, such as: AC and DC motor controls, power supplies and drivers for solenoids, relays and contactors. Formerly developmental type TA49273.
Features
75A, 600V, TC = 25oC 600V Switching SOA Capability Typical Fall Time . . . . . . . . . . . . . . . . 100ns at TJ = 150oC Short Circuit Rating Low Conduction Loss
Packaging
JEDEC STYLE TO-247
E C G
Ordering Information
PART NUMBER HGTG40N60C3 PACKAGE TO-247 PKG. NO. G40N60C3
NOTE: When ordering, use the entire part number.
Symbol
C
G
E
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FAIRCHILD CORPORATION IGBT PRODUCT IS COVERED BY ONE OR MORE OF THE FOLLOWING U.S. PATENTS 4,364,073 4,598,461 4,682,195 4,803,533 4,888,627 4,417,385 4,605,948 4,684,413 4,809,045 4,890,143 4,430,792 4,620,211 4,694,313 4,809,047 4,901,127 4,443,931 4,631,564 4,717,679 4,810,665 4,904,609 4,466,176 4,639,754 4,743,952 4,823,176 4,933,740 4,516,143 4,639,762 4,783,690 4,837,606 4,963,951 4,532,534 4,641,162 4,794,432 4,860,080 4,9...