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APT60GA60JD60 Dataheets PDF



Part Number APT60GA60JD60
Manufacturers Microsemi Corporation
Logo Microsemi Corporation
Description High Speed PT IGBT
Datasheet APT60GA60JD60 DatasheetAPT60GA60JD60 Datasheet (PDF)

APT60GA60JD60 600V High Speed PT IGBT ® E E POWER MOS 8 is a high speed Punch-Through switch-mode IGBT. Low Eoff is achieved 27 -2 C G through leading technology silicon design and lifetime control processes. A reduced Eoff T SO VCE(ON) tradeoff results in superior efficiency compared to other IGBT technologies. Low gate charge and a greatly reduced ratio of Cres/Cies provide excellent noise immunity, short "UL Recognized" ISOTOP ® delay times and simple gate drive. The intrinsic chip gate res.

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APT60GA60JD60 600V High Speed PT IGBT ® E E POWER MOS 8 is a high speed Punch-Through switch-mode IGBT. Low Eoff is achieved 27 -2 C G through leading technology silicon design and lifetime control processes. A reduced Eoff T SO VCE(ON) tradeoff results in superior efficiency compared to other IGBT technologies. Low gate charge and a greatly reduced ratio of Cres/Cies provide excellent noise immunity, short "UL Recognized" ISOTOP ® delay times and simple gate drive. The intrinsic chip gate resistance and capacitance of the APT60GA60JD60 poly-silicone gate structure help control di/dt during switching, resulting in low EMI, even when switching at high frequency. Combi (IGBT and Diode) file # E145592 FEATURES • Fast switching with low EMI • Very Low Eoff for maximum efficiency • Ultra low Cres for improved noise immunity • Low conduction loss • Low gate charge • Increased intrinsic gate resistance for low EMI • RoHS compliant TYPICAL APPLICATIONS • ZVS phase shifted and other full bridge • Half bridge • High power PFC boost • Welding • UPS, solar, and other inverters • High frequency, high efficiency industrial Absolute Maximum Ratings Symbol Vces IC1 IC2 ICM VGE Parameter Collector Emitter Voltage Continuous Collector Current @ TC = 25°C Continuous Collector Current @ TC = 100°C Pulsed Collector Current 1 Gate-Emitter Voltage 2 Ratings 600 112 60 178 ±30 356 178A @ 600V -55 to 150 Unit V A V W PD Total Power Dissipation @ TC = 25°C www.DataSheet4U.com SSOA TJ, TSTG Switching Safe Operating Area @ TJ = 150°C Operating and Storage Junction Temperature Range °C Static Characteristics Symbol VBR(CES) VCE(on) VGE(th) ICES IGES TJ = 25°C unless otherwise specified Test Conditions VGE = 0V, IC = 1.0mA VGE = 15V, IC = 62A VCE = 600V, VGE = 0V TJ = 25°C TJ = 125°C 3 TJ = 25°C TJ = 125°C Parameter Collector-Emitter Breakdown Voltage Collector-Emitter On Voltage Gate Emitter Threshold Voltage Zero Gate Voltage Collector Current Gate-Emitter Leakage Current Min 600 Typ 2.0 1.9 4.5 Max 2.5 6 275 3000 ±100 Unit V VGE =VCE , IC = 1mA μA 052-6340 Rev C 3 - 2009 VGS = ±30V nA Microsemi Website - http://www.microsemi.com Dynamic Characteristics Symbol Cies Coes Cres Qg3 Qge Qgc SSOA td(on) tr td(off) tf Eon2 Eoff6 td(on) tr td(off) tf Eon2 Eoff6 TJ = 25°C unless otherwise specified Test Conditions Capacitance VGE = 0V, VCE = 25V f = 1MHz Gate Charge VGE = 15V VCE= 300V IC = 62A TJ = 150°C, RG = 4.7Ω4, VGE = 15V, L= 100uH, VCE = 600V Inductive Switching (25°C) VCC = 400V VGE = 15V IC = 62A RG = 4.7Ω4 TJ = +25°C Inductive Switching (125°C) VCC = 400V VGE = 15V IC = 62A RG = 4.7Ω4 TJ = +125°C 178 35 49 175 91 APT60GA60JD60 Min Typ 8010 714 74 296 106 60 A nC pF Parameter Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge Gate-Emitter Charge Gate- Collector Charge Switching Safe Operating Area Turn-On Delay Time Current Rise Time Turn-Off Delay Time Current Fall Time Turn-On Switching Energy Turn-Off Switching Energy Turn-On Delay Time Current Rise Time Turn-Off Delay Time Current Fall Time Turn-On Switching Energy Turn-Off Switching Energy Max Unit ns 1450 1255 33 49 214 119 1995 1760 μJ ns μJ Thermal and Mechanical Characteristics Symbol RθJC RθJC WT VIsolation Characteristic Junction to Case Thermal Resistance (IGBT) Junction to Case Thermal Resistance (Diode) Package Weight RMS Voltage (50-60Hz Sinusoidal Waveform from Terminals to Mounting Base for 1 Min.) Min - Typ - Max .35 .60 Unit °C/W g Volts 2500 29.2 - 1 Repetitive Rating: Pulse width and case temperature limited by maximum junction temperature. 2 Pulse test: Pulse Width < 380μs, duty cycle < 2%. www.DataSheet4U.com 3 See Mil-Std-750 Method 3471. 4 RG is external gate resistance, not including internal gate resistance or gate driver impedance. (MIC4452) 5 Eon2 is the clamped inductive turn on energy that includes a commutating diode reverse recovery current in the IGBT turn on energy loss. A combi device is used for the clamping diode. 6 Eoff is the clamped inductive turn-off energy measured in accordance with JEDEC standard JESD24-1. Microsemi reserves the right to change, without notice, the specifications and information contained herein. 052-6340 Rev C 3 - 2009 Typical Performance Curves 200 175 IC, COLLECTOR CURRENT (A) 150 125 100 75 50 25 0 0 1 2 3 4 5 6 VCE, COLLECTOR-TO-EMITTER VOLTAGE (V) FIGURE 1, Output Characteristics (TJ = 25°C) VGE, GATE-TO-EMITTER VOLTAGE (V) 250 μs PULSE TEST<0.5 % DUTY CYCLE APT60GA60JD60 350 13V 15V 11V 10V V GE = 15V IC, COLLECTOR CURRENT (A) TJ= 55°C TJ= 125°C TJ= 25°C TJ= 150°C 300 250 9V 200 150 100 7V 50 0 6V 0 4 8 12 16 20 24 28 32 VCE, COLLECTOR-TO-EMITTER VOLTAGE (V) FIGURE 2, Output Characteristics (TJ = 25°C) I = 62A C T = 25°C J 8V 200 175 IC, COLLECTOR CURRENT (A) 150 125 100 75 50 25 0 0 16 14 12 10 8 6 4 2 0 VCE = 120V VCE = 300V VCE = 480V TJ= 25°C TJ= 125°C 2 TJ= -55°C 4 6 8 10 12 13 14 VGE, GATE-TO-EMITTER VOLTAGE (V) FIGURE .


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