FAST IGBT & FRED
TYPICAL PERFORMANCE CURVES ®
APT60GF120JRDQ3 1200V
APT60GF120JRDQ3
FAST IGBT & FRED
The Fast IGBT is a new generation...
Description
TYPICAL PERFORMANCE CURVES ®
APT60GF120JRDQ3 1200V
APT60GF120JRDQ3
FAST IGBT & FRED
The Fast IGBT is a new generation of high voltage power IGBTs. Using Non-Punch through technology, the Fast IGBT combined with an APT free wheeling Ultra Fast Recovery Epitaxial Diode (FRED) offers superior ruggedness and fast switching speed. Low Forward Voltage Drop RBSOA and SCSOA Rated High Freq. Switching to 20KHz Ultra Low Leakage Current
E G C
E
S
OT
22
7
ISOTOP ®
"UL Recognized"
file # E145592
Ultrafast Soft Recovery Anti-parallel Diode
C G E
MAXIMUM RATINGS
Symbol VCES VGE I C1 I C2 I CM SSOA PD TJ,TSTG Parameter Collector-Emitter Voltage Gate-Emitter Voltage Continuous Collector Current @ TC = 25°C Continuous Collector Current @ TC = 100°C Pulsed Collector Current
1
All Ratings: TC = 25°C unless otherwise specified.
APT60GF120JRDQ3 UNIT Volts
1200 ±30 149 79 300 300A @ 1200V 625 -55 to 150
Amps
Switching Safe Operating Area @ TJ = 150°C Total Power Dissipation Operating and Storage Junction Temperature Range
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Watts
STATIC ELECTRICAL CHARACTERISTICS
Symbol V(BR)CES VGE(TH) VCE(ON) Characteristic / Test Conditions Collector-Emitter Breakdown Voltage (VGE = 0V, I C = 350µA) Gate Threshold Voltage (VCE = VGE, I C = 500µA, Tj = 25°C) MIN TYP MAX Units
1200 4.5 5.5 2.5 3.1 0.35
2
6.5 3.0
Collector-Emitter On Voltage (VGE = 15V, I C = 100A, Tj = 25°C) Collector-Emitter On Voltage (VGE = 15V, I C = 100A, Tj = 125°C) Collector Cut-off Curren...
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