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APT60GF60JU2 Dataheets PDF



Part Number APT60GF60JU2
Manufacturers Microsemi Corporation
Logo Microsemi Corporation
Description Boost chopper NPT IGBT
Datasheet APT60GF60JU2 DatasheetAPT60GF60JU2 Datasheet (PDF)

APT60GF60JU2 ISOTOP® Boost chopper NPT IGBT K VCES = 600V IC = 60A @ Tc = 95°C Application • AC and DC motor control • Switched Mode Power Supplies • Power Factor Correction • Brake switch Features • Non Punch Through (NPT) THUNDERBOLT IGBT ® C G E • • • E G www.DataSheet4U.com K - Low voltage drop - Low tail current - Switching frequency up to 100 kHz - Soft recovery parallel diodes - Low diode VF - Low leakage current - Avalanche energy rated - RBSOA and SCSOA rated ISOTOP® Package (SOT.

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APT60GF60JU2 ISOTOP® Boost chopper NPT IGBT K VCES = 600V IC = 60A @ Tc = 95°C Application • AC and DC motor control • Switched Mode Power Supplies • Power Factor Correction • Brake switch Features • Non Punch Through (NPT) THUNDERBOLT IGBT ® C G E • • • E G www.DataSheet4U.com K - Low voltage drop - Low tail current - Switching frequency up to 100 kHz - Soft recovery parallel diodes - Low diode VF - Low leakage current - Avalanche energy rated - RBSOA and SCSOA rated ISOTOP® Package (SOT-227) Very low stray inductance High level of integration C Benefits • Outstanding performance at high frequency operation • Stable temperature behavior • Very rugged • Direct mounting to heatsink (isolated package) • Low junction to case thermal resistance • Easy paralleling due to positive TC of VCEsat • RoHS Compliant ISOTOP Absolute maximum ratings Symbol VCES IC1 IC2 ICM VGE PD ILM IFA V IFRMS Parameter Collector - Emitter Breakdown Voltage Continuous Collector Current Pulsed Collector Current Gate – Emitter Voltage Maximum Power Dissipation RBSOA clamped Inductive load Current R G=11 Ω Maximum Average Forward Current Duty cycle=0.5 RMS Forward Current (Square wave, 50% duty) TC = 25°C TC = 95°C TC = 25°C TC = 25°C TC = 25°C TC = 80°C 360 30 39 A A These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed. www.microsemi.com 1-8 APT60GF60JU2 – Rev 1 June, 2006 Max ratings 600 93 60 360 ±20 378 Unit V A V W APT60GF60JU2 All ratings @ Tj = 25°C unless otherwise specified Electrical Characteristics Symbol Characteristic ICES VCE(sat) VGE(th) IGES Zero Gate Voltage Collector Current Collector Emitter saturation Voltage Gate Threshold Voltage Gate – Emitter Leakage Current Test Conditions Tj = 25°C VGE = 0V VCE = 600V Tj = 125°C T VGE =15V j = 25°C IC = 60A Tj = 125°C VGE = VCE, IC = 500µA VGE = ±20V, VCE = 0V Min Typ Max 80 2000 2.5 2.8 5 ±100 Unit µA V V nA 2.0 3 4 Dynamic Characteristics Symbol Cies Coes Cres Qg Qge Qgc Td(on) Tr Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Total gate Charge Gate – Emitter Charge Gate – Collector Charge Turn-on Delay Time Rise Time Test Conditions VGE = 0V VCE = 25V f = 1MHz VGS = 15V VBus = 300V IC = 60A Resistive Switching (25°C) VGE = 15V VBus = 300V IC = 60A R G = 5Ω Inductive Switching (25°C) VGE = 15V VBus = 400V IC = 60A R G = 5Ω Inductive Switching (150°C) VGE = 15V VBus = 400V IC = 60A R G = 5Ω Min Typ 3125 310 180 257 19 120 20 95 315 245 26 63 395 68 3.4 25 59 430 65 1.6 2.4 4.0 Max 3590 450 310 410 30 180 40 190 470 490 50 125 590 140 7 50 120 650 130 3.2 4.8 8.0 Unit pF nC Td(off) Turn-off Delay Time Tf Fall Time Td(on) Turn-on Delay Time Tr Rise Time Td(off) Turn-off Delay Time Tf Fall Time Ets Total switching Losses www.DataSheet4U.com Td(on) Turn-on Delay Time Tr Rise Time Td(off) Turn-off Delay Time Tf Fall Time Eon Turn-on Switching Energy Eoff Ets Turn-off Switching Energy Total switching Losses ns ns mJ ns mJ www.microsemi.com 2-8 APT60GF60JU2 – Rev 1 June, 2006 APT60GF60JU2 Chopper diode ratings and characteristics Symbol VF IRM CT trr Reverse Recovery Time IRRM Qrr trr Qrr IRRM Maximum Reverse Recovery Current Reverse Recovery Charge Reverse Recovery Time Reverse Recovery Charge Maximum Reverse Recovery Current IF = 30A VR = 400V di/dt =1000A/µs IF = 30A VR = 400V di/dt =200A/µs Characteristic Diode Forward Voltage Maximum Reverse Leakage Current Junction Capacitance Reverse Recovery Time Test Conditions IF = 30A IF = 60A IF = 30A VR = 600V VR = 600V VR = 200V IF=1A,VR=30V di/dt =100A/µs Min Typ 1.6 1.9 1.4 44 Tj = 25°C Tj = 25°C Tj = 125°C Tj = 25°C Tj = 125°C Tj = 25°C Tj = 125°C Tj = 125°C 23 85 160 4 8 130 700 70 1300 30 ns Max 1.8 250 500 Unit V µA pF Tj = 125°C Tj = 25°C Tj = 125°C A nC ns nC A Thermal and package characteristics Symbol RthJC Characteristic Junction to Case Thermal Resistance IGBT Diode Min Typ RthJA Junction to Ambient (IGBT & Diode) RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz VISOL TJ,TSTG Storage Temperature Range TL Max Lead Temp for Soldering:0.063” from case for 10 sec Torque Mounting torque (Mounting = 8-32 or 4mm Machine and terminals = 4mm Machine) www.DataSheet4U.com Wt Package Weight Max 0.33 1.21 20 150 300 1.5 Unit °C/W V °C N.m g 2500 -55 29.2 www.microsemi.com 3-8 APT60GF60JU2 – Rev 1 June, 2006 APT60GF60JU2 Typical IGBT Performance Curve www.DataSheet4U.com www.microsemi.com 4-8 APT60GF60JU2 – Rev 1 June, 2006 APT60GF60JU2 www.DataSheet4U.com www.microsemi.com 5-8 APT60GF60JU2 – Rev 1 June, 2006 APT60GF60JU2 Typical Diode Performance Curve www.DataSheet4U.com www.microsemi.com 6-8 APT60GF60JU2 – Rev 1 June, 2006 APT60GF60JU2 www.DataSheet4U.com www.microsemi.com 7-8 APT60GF60JU2 – Rev 1 June, 2006 APT60GF60JU2 SOT-227 (ISOTOP®) Package Outline 31.5 (1.240) 31.7 (1.248) 7.8 (.307) 8.2 (.322) W=4.1 (.161) W=4.3 (.169) H=4.8 (.187) H=4.9 (.193).


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