LY62L256

® LY62L256 Rev. 1.2 32K X 8 BIT LOW POWER CMOS SRAM REVISION HISTORY Revision Rev. 1.0 Rev. 1.1 Rev. 1.2 Description Initial Issue Revised STSOP Package Outline Dimension Deleted L Spec. Revised VTERM to VT1 and VT2 Revised Test Condition of ISB1/IDR Revised FEATURES & ORDERING INFORMATION Lead free and green package available to Green package available Added packing type in ORDERING INFORMATION Deleted TSOLDER in ABSOLUTE MAXIMUN RATINGS Issue Date Jul.25.2004 Mar.26.2008 Apr.13.2009 www.DataSheet4U.com Lyontek Inc. reserves the rights to change the specifications and products without notice. 5F, No. 2, Industry E. Rd. IX, Science-Based Industrial Park, Hsinchu 300, Taiwan. TEL: 886-3-6668838 FAX: 886-3-6668836 0 ® LY62L256 Rev. 1.2 32K X 8 BIT LOW POWER CMOS SRAM GENERAL DESCRIPTION The LY62L256 is a 262,144-bit low power CMOS static random access memory organized as 32,768 words by 8 bits. It is fabricated using very high performance, high reliability CMOS technology. Its standby current is stable within the range of operating temperature. The LY62L256 is well designed for low power application, and particularly well suited for battery back-up nonvolatile memory application. The LY62L256 operates from a single power supply of 2.7V ~ 3.6V and all inputs and outputs are fully TTL compatible FEATURES „ Fast access time : 35/55/70ns „ Low power consumption: Operating current : 20/15/10mA (TYP.) Standby current : 0.5μA (TYP.) LL-version „ Single 2.7V ~ 3.6V power suppl...