LY62W256

® LY62W256 Rev. 1.3 32K X 8 BIT LOW POWER CMOS SRAM REVISION HISTORY Revision Rev. 1.0 Rev. 1.1 Rev. 1.2 Rev. 1.3 Description Initial Issue Merge 2.7~3.6V and 4.5~5.5V to 2.7~5.5V Revised STSOP Package Outline Dimension Revised FEATURES & ORDERING INFORMATION Lead free and green package available to Green package available Added packing type in ORDERING INFORMATION Revised ISB1(MAX) & VDR(MIN) Revised VTERM to VT1 and VT2 Revised Test Condition of ISB1/IDR Deleted TSOLDER in ABSOLUTE MAXIMUN RATINGS Issue Date Jul.25.2004 Jan.17.2005 Mar.26.2008 Mar.30.2009 www.DataSheet4U.com Lyontek Inc. reserves the rights to change the specifications and products without notice. 5F, No. 2, Industry E. Rd. IX, Science-Based Industrial Park, Hsinchu 300, Taiwan. TEL: 886-3-6668838 FAX: 886-3-6668836 0 ® LY62W256 Rev. 1.3 32K X 8 BIT LOW POWER CMOS SRAM GENERAL DESCRIPTION The LY62W256 is a 262,144-bit low power CMOS static random access memory organized as 32,768 words by 8 bits. It is fabricated using very high performance, high reliability CMOS technology. Its standby current is stable within the range of operating temperature. The LY62W256 is well designed for low power application, and particularly well suited for battery back-up nonvolatile memory application. The LY62W256 operates with wide range power supply and all inputs and outputs are fully TTL compatible FEATURES „ Fast access time : 35/55/70ns „ Low power consumption: Operation current : 20/15/10mA (TYP.), VCC = 3.0V S...