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LY62L6416
Rev. 1.2
64K X 16 BIT LOW POWER CMOS SRAM
REVISION HISTORY
Revision Rev. 1.0 Rev. 1.1 Rev. 1.2 Description Initial Issue Revised Package Outline Dimension(TSOP-II) Added ISB1/IDR values when TA = 25℃ and TA = 40℃ Added SL grade Deleted L grade Revised FEATURES & ORDERING INFORMATION Lead free and green package available to Green package available Added packing type in ORDERING INFORMATION Revised VTERM to VT1 and VT2 Deleted TSOLDER in ABSOLUTE MAXIMUN RATINGS Issue Date Jul.25.2004 Apr.12.2007 Mar.30.2009
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Lyontek Inc. reserves the rights to change the specifications and products without notice. 5F, No. 2, Industry E. Rd. IX, Science-Based Industrial Park, Hsinchu 300, Taiwan. TEL: 886-3-6668838 FAX: 886-3-6668836 0
®
LY62L6416
Rev. 1.2
64K X 16 BIT LOW POWER CMOS SRAM
GENERAL DESCRIPTION
The LY62L6416 is a 1,048,576-bit low power CMOS static random access memory organized as 65,536 words by 16 bits. It is fabricated using very high performance, high reliability CMOS technology. Its standby current is stable within the range of operating temperature. The LY62L6416 is well designed for low power application, and particularly well suited for battery back-up nonvolatile memory application. The LY62L6416 operates from a single power supply of 2.7V ~ 3.6V and all inputs and outputs are fully TTL compatible
FEATURES
Fast access time : 45/55/70ns Low power consumption: Operating current : 23/20/18mA (TYP.) Standby current : 1μA (TYP.) LL/SL -version Single 2.7V ~ 3.6V power supply All inputs and outputs TTL compatible Fully static operation Tri-state output Data byte control : LB# (DQ0 ~ DQ7) UB# (DQ8 ~ DQ15) Data retention voltage : 1.5V (MIN.) Green package available Package : 44-pin 400 mil TSOP-II 48-ball 6mm x 8mm TFBGA
PRODUCT FAMILY
Product Family LY62L6416 LY62L6416(E) LY62L6416(I) Operating Temperature 0 ~ 70℃ -20 ~ 80℃ -40 ~ 85℃ Vcc Range 2.7 ~ 3.6V 2.7 ~ 3.6V 2.7 ~ 3.6V Speed 45/55/70ns 45/55/70ns 45/55/70ns Power Dissipation Standby(ISB1,TYP.) Operating(Icc,TYP.) 1µA 23/20/18mA 1µA 23/20/18mA 1µA 23/20/18mA
FUNCTIONAL BLOCK DIAGRAM
PIN DESCRIPTION
SYMBOL DESCRIPTION Address Inputs Chip Enable Input Write Enable Input Output Enable Input Lower Byte Control Upper Byte Control Power Supply Ground
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64Kx16 MEMORY ARRAY
Vcc Vss
A0 - A15 CE# WE# OE# LB# UB# VCC
DQ0 – DQ15 Data Inputs/Outputs
DECODER
A0-A15
DQ0-DQ7 Lower Byte DQ8-DQ15 Upper Byte
VSS
I/O DATA CIRCUIT COLUMN I/O
CE# WE# OE# LB# UB#
CONTROL CIRCUIT
Lyontek Inc. reserves the rights to change the specifications and products without notice. 5F, No. 2, Industry E. Rd. IX, Science-Based Industrial Park, Hsinchu 300, Taiwan. TEL: 886-3-6668838 FAX: 886-3-6668836 1
®
LY62L6416
Rev. 1.2
64K X 16 BIT LOW POWER CMOS SRAM
PIN CONFIGURATION
A4 A3 A2 A1 A0 CE# DQ0 DQ1 DQ2 DQ3 Vcc Vss DQ4 DQ5 DQ6 DQ7 WE# A15 A14 A13 A12 NC 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 TSOP II 44 43 42 41 40 39 38 37 36 35 34 33 32 31 30 29 28 27 26 25 24 23 A5 A6 A7 OE# UB# LB# DQ15 DQ14 DQ13 DQ12 Vss Vcc DQ11 DQ10 DQ9 DQ8 NC A8 A9 A10 A11 NC
LY62L6416
A B C D E F G H
LB# OE# DQ8 UB#
A0 A3
A1 A4 A6 A7 NC
A2
NC
CE# DQ0 DQ1 DQ2 DQ3 Vcc DQ4 Vss
DQ9 DQ10 A5 Vss DQ11 NC Vcc DQ12 NC DQ14 DQ13 A14 DQ15 NC NC A8 A12 A9
A15 DQ5 DQ6 A13 WE# DQ7 A10 A11 NC
1
2
3 4 TFBGA
5
6
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ABSOLUTE MAXIMUN RATINGS*
PARAMETER Voltage on VCC relative to VSS Voltage on any other pin relative to VSS Operating Temperature Storage Temperature Power Dissipation DC Output Current SYMBOL VT1 VT2 TA TSTG PD IOUT RATING -0.5 to 4.6 -0.5 to VCC+0.5 0 to 70(C grade) -20 to 80(E grade) -40 to 85(I grade) -65 to 150 1 50 UNIT V V ℃ ℃ W mA
*Stresses greater than those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress rating only and functional operation of the device or any other conditions above those indicated in the operational sections of this specification is not implied. Exposure to the absolute maximum rating conditions for extended period may affect device reliability.
Lyontek Inc. reserves the rights to change the specifications and products without notice. 5F, No. 2, Industry E. Rd. IX, Science-Based Industrial Park, Hsinchu 300, Taiwan. TEL: 886-3-6668838 FAX: 886-3-6668836 2
®
LY62L6416
Rev. 1.2
64K X 16 BIT LOW POWER CMOS SRAM
TRUTH TABLE
MODE Standby Output Disable Read CE# H X L L L L L L L L OE# X X H H L L L X X X WE# LB# X X H H H H H L L L X H L X L H L L H L UB# X H X L H L L H L L I/O OPERATION DQ0-DQ7 DQ8-DQ15 High – Z High – Z High – Z High – Z High – Z High – Z High – Z High – Z DOUT High – Z High – Z DOUT DOUT DOUT DIN High – Z High – Z DIN DIN DIN SUPPLY CURRENT ISB,ISB1 ICC,ICC1 ICC,ICC1
Write
Note:
ICC,ICC1
H = VIH, L = VIL, X = Don't care.
DC ELECTRICAL CHARACTERISTICS
SYMBOL TEST CONDITION PARAMETER Supply Voltage VCC *1 Input High Voltage VIH *2 Input Low Voltage VIL Input Leakage Current.