LY62L25716

® LY62L25716 Rev. 2.4 256K X 16 BIT LOW POWER CMOS SRAM REVISION HISTORY Revision Rev. 1.0 Rev. 2.0 Rev. 2.1 Rev. 2.2 Rev. 2.3 Description Initial Issue Revised ISB(max) : 0.5mA => 1.25mA Adding 44-pin TSOP-II Adding 48-ball BGA Revised IDR Deleted L Spec. Added SL Spec. Revised Test Condition of ICC/ISB1/IDR Revised VTERM to VT1 and VT2 Added ISB1/IDR values when TA = 25℃ and TA = 40℃ Revised FEATURES & ORDERING INFORMATION Lead free and green package available to Green package available Added packing type in ORDERING INFORMATION Deleted TSOLDER in ABSOLUTE MAXIMUN RATINGS Issue Date Apr.19.2006 May.11.2006 Jul.5.2006 Dec.20.2006 Mar.3.2008 Rev. 2.4 Mar.30.2009 www.DataSheet4U.com Lyontek Inc. reserves the rights to change the specifications and products without notice. 5F, No. 2, Industry E. Rd. IX, Science-Based Industrial Park, Hsinchu 300, Taiwan. TEL: 886-3-6668838 FAX: 886-3-6668836 0 ® LY62L25716 Rev. 2.4 256K X 16 BIT LOW POWER CMOS SRAM GENERAL DESCRIPTION The LY62L25716 is a 4,194,304-bit low power CMOS static random access memory organized as 262,144 words by 16 bits. It is fabricated using very high performance, high reliability CMOS technology. Its standby current is stable within the range of operating temperature. The LY62L25716 is well designed for low power application, and particularly well suited for battery back-up nonvolatile memory application. The LY62L25716 operates from a single power supply of 2.7V ~ 3.6V and all inputs and outputs are ful...