LY62L10248

® LY62L10248 Rev. 0.6 1024K X 8 BIT LOW POWER CMOS SRAM REVISION HISTORY Revision Rev. 0.1 Rev. 0.2 Rev. 0.3 Rev. 0.4 Rev. 0.5 Description Initial Issue Revised ISB1, ICC1, IDR, VDR Delete -45ns Spec. Added ISB Spec. Added SL Spec. Revised FEATURES & ORDERING INFORMATION Lead free and green package available to Green package available Added packing type in ORDERING INFORMATION Deleted TSOLDER in ABSOLUTE MAXIMUN RATINGS Added ISB1/IDR values when TA = 25℃ and TA = 40℃ Revised IDR Spec. Issue Date Jan.8.2007 Nov.1.2007 Feb.1.2008 Jul.2.2008 May.20.2009 Rev. 0.6 Oct.29.2009 www.DataSheet4U.com Lyontek Inc. reserves the rights to change the specifications and products without notice. 5F, No. 2, Industry E. Rd. IX, Science-Based Industrial Park, Hsinchu 300, Taiwan. TEL: 886-3-6668838 FAX: 886-3-6668836 0 ® LY62L10248 Rev. 0.6 1024K X 8 BIT LOW POWER CMOS SRAM GENERAL DESCRIPTION The LY62L10248 is a 8,388,608-bit low power CMOS static random access memory organized as 1,048,576 words by 8 bits. It is fabricated using very high performance, high reliability CMOS technology. Its standby current is stable within the range of operating temperature. The LY62L10248 is well designed for very low power system applications, and particularly well suited for battery back-up nonvolatile memory application. The LY62L10248 operates from a single power supply of 2.7V ~ 3.6V and all inputs and outputs are fully TTL compatible FEATURES „ Fast access time : 55/70ns „ Low power consumpti...