Document
®
LY616416
Rev. 1.1
5V 64K X 16 BIT HIGH SPEED CMOS SRAM
REVISION HISTORY
Revision Rev. 1.0 Rev. 1.1 Description Initial Issue Revised Test Condition of ICC Revised FEATURES & ORDERING INFORMATION Lead free and green package available to Green package available Deleted TSOLDER in ABSOLUTE MAXIMUN RATINGS Added packing type in ORDERING INFORMATION Issue Date Aug.29.2007 Aug.28.2009
www.DataSheet4U.com
Lyontek Inc. reserves the rights to change the specifications and products without notice. 5F, No. 2, Industry E. Rd. IX, Science-Based Industrial Park, Hsinchu 300, Taiwan. TEL: 886-3-6668838 FAX: 886-3-6668836 0
®
LY616416
Rev. 1.1
5V 64K X 16 BIT HIGH SPEED CMOS SRAM
GENERAL DESCRIPTION
The LY616416 is a 1,048,576-bit low power CMOS static random access memory organized as 65,536 words by 16 bits. It is fabricated using very high performance, high reliability CMOS technology. Its standby current is stable within the range of operating temperature. The LY616416 is well designed for low power application, and particularly well suited for battery back-up nonvolatile memory application. The LY616416 operates from a single power supply of 5V and all inputs and outputs are fully TTL compatible
FEATURES
Fast access time : 15/20ns Low power consumption: Operating current : 140/110mA(MAX.) Standby current : 3mA(MAX. for 15/20ns) 100µA( (MAX. for 15/20ns LL version) Single 5V power supply All outputs TTL compatible Fully static operation Tri-state output Data byte control : LB# (DQ0 ~ DQ7) UB# (DQ8 ~ DQ15) Data retention voltage : 2.0V (MIN.) Green package available Package : 44-pin 400 mil TSOP-II
PRODUCT FAMILY
Product Family LY616416 LY616416(E) LY616416(I) LY616416(LL) LY616416(LLE) LY616416(LLI) Operating Temperature 0 ~ 70℃ -20 ~ 80℃ -40 ~ 85℃ 0 ~ 70℃ -20 ~ 80℃ -40 ~ 85℃ Vcc Range 4.5 ~ 5.5V 4.5 ~ 5.5V 4.5 ~ 5.5V 4.5 ~ 5.5V 4.5 ~ 5.5V 4.5 ~ 5.5V Speed 15/20ns 15/20ns 15/20ns 15/20ns 15/20ns 15/20ns Power Dissipation Standby(ISB1) Operating(Icc) 3mA(MAX.) 140/110mA(MAX.) 3mA(MAX.) 140/110mA(MAX.) 3mA(MAX.) 140/110mA(MAX.) 100µA(MAX.) 140/110mA(MAX.) 100µA(MAX.) 140/110mA(MAX.) 100µA(MAX.) 140/110mA(MAX.)
www.DataSheet4U.com
Lyontek Inc. reserves the rights to change the specifications and products without notice. 5F, No. 2, Industry E. Rd. IX, Science-Based Industrial Park, Hsinchu 300, Taiwan. TEL: 886-3-6668838 FAX: 886-3-6668836 1
®
LY616416
Rev. 1.1
5V 64K X 16 BIT HIGH SPEED CMOS SRAM
PIN DESCRIPTION
SYMBOL DESCRIPTION Address Inputs Chip Enable Input Write Enable Input Output Enable Input Lower Byte Control Upper Byte Control Power Supply Ground
FUNCTIONAL BLOCK DIAGRAM
Vcc Vss
A0 - A15 CE# WE# OE# LB# UB# VCC
DQ0 – DQ15 Data Inputs/Outputs
DECODER 64Kx16 MEMORY ARRAY
A0-A15
DQ0-DQ7 Lower Byte DQ8-DQ15 Upper Byte
VSS
I/O DATA CIRCUIT COLUMN I/O
CE# WE# OE# LB# UB#
CONTROL CIRCUIT
www.DataSheet4U.com
Lyontek Inc. reserves the rights to change the specifications and products without notice. 5F, No. 2, I.