LY6125616

® LY6125616 Rev. 2.1 5V 256K X 16 BIT HIGH SPEED CMOS SRAM REVISION HISTORY Revision Rev. 1.0 Rev. 1.1 Rev. 1.2 Rev. 2.0 Description Initial Issue Revised VIL = 0.6V => 0.8V Revised Package Outline Dimension(TSOP-II) Added LL Spec. Revised Test Condition of ISB1/IDR Added -12ns Spec. Revised ICC and ISB1 Added I grade Revised ABSOLUTE MAXIMUN RATINGS Revised Test Condition of ICC Revised FEATURES & ORDERING INFORMATION Lead free and green package available to Green package available Deleted TSOLDER in ABSOLUTE MAXIMUN RATINGS Added packing type in ORDERING INFORMATION Issue Date Mar.23.2006 Jun.9.2006 Apr.12.2007 Jun.25.2007 Rev. 2.1 Apr.17.2009 www.DataSheet4U.com Lyontek Inc. reserves the rights to change the specifications and products without notice. 5F, No. 2, Industry E. Rd. IX, Science-Based Industrial Park, Hsinchu 300, Taiwan. TEL: 886-3-6668838 FAX: 886-3-6668836 0 ® LY6125616 Rev. 2.1 5V 256K X 16 BIT HIGH SPEED CMOS SRAM GENERAL DESCRIPTION The LY6125616 is a 4,194,304-bit low power CMOS static random access memory organized as 262,144 words by 16 bits. It is fabricated using very high performance, high reliability CMOS technology. Its standby current is stable within the range of operating temperature. The LY6125616 is well designed for low power application, and particularly well suited for battery back-up nonvolatile memory application. The LY6125616 operates from a single power supply of 5V and all inputs and outputs are fully TTL compatible FEATURE...