LY61L2568

® LY61L2568 Rev. 0.4 256K X 8 BIT HIGH SPEED CMOS SRAM REVISION HISTORY Revision Rev. 0.1 Rev. 0.2 Rev. 0.3 Rev. 0.4 Description Preliminary Deleted ISB Spec. Deleted -10/-12/-15 Spec. Revised Test Condition of ICC/ISB1/IDR Revised VTERM to VT1 and VT2 Revised FEATURES & ORDERING INFORMATION Lead free and green package available to Green package available Deleted TSOLDER in ABSOLUTE MAXIMUN RATINGS Added packing type in ORDERING INFORMATION Issue Date Apr.19.2006 May.24.2006 Mar.13.2007 Apr.17.2009 www.DataSheet4U.com Lyontek Inc. reserves the rights to change the specifications and products without notice. 5F, No. 2, Industry E. Rd. IX, Science-Based Industrial Park, Hsinchu 300, Taiwan. TEL: 886-3-6668838 FAX: 886-3-6668836 0 ® LY61L2568 Rev. 0.4 256K X 8 BIT HIGH SPEED CMOS SRAM GENERAL DESCRIPTION The LY61L2568 is a 2,097,152-bit low power CMOS static random access memory organized as 262,144 words by 8 bits. It is fabricated using very high performance, high reliability CMOS technology. Its standby current is stable within the range of operating temperature. The LY61L2568 is well designed for very low power system applications, and particularly well suited for battery back-up nonvolatile memory application. The LY61L2568 operates from a single power supply of 3.3V and all inputs and outputs are fully TTL compatible FEATURES „ Fast access time : 20/25ns „ Very low power consumption: Operating current(Normal version): 110/90mA(TYP.) Operating current(20/25ns LL ve...