RJK6022DJE

RJK6022DJE Silicon N Channel MOS FET High Speed Power Switching REJ03G1484-0600 Rev.6.00 Nov 10, 2006 Features Low on-resistance Low drive current High density mounting Outline RENESAS Package code: PRSS0003DC-A (Package name: TO-92 Mod) D G 1. Source 2. Drain 3. Gate 32 S 1 Absolute Maximum Ratings (Ta = 25°C) www.DataSheet4U.com Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Body-drain diode reverse drain peak current Channel dissipation Channel to ambient thermal impedance Channel temperature Storage temperature Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1% Symbol VDSS VGSS ID ID (pulse)Note1 IDR IDR (pulse)Note1 Pch θch-a Tch Tstg Ratings 600 ±30 0.2 0.8 0.2 0.8 0.9 139 150 –55 to +150 Unit V V A A A A W °C/W °C °C Rev.6.00 Nov 10, 2006 page 1 of 6 RJK6022DJE Electrical Characteristics (Ta = 25°C) Item Drain to source breakdown voltage Zero gate voltage drain current Gate to source leak current Gate to source cutoff voltage Static drain to source on state resistance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Total gate charge Gate to source charge Gate to drain charge Body-drain diode forward voltage Body-drain diode reverse recovery time Symbol V(BR)DSS IDSS IGSS VGS(off) RDS(on) Ciss Coss Crss td(on) tr td(off) tf Qg Qgs Qgd VDF trr Min 600 — — 3 — — — — — — — — — — — — — Typ — — — — 13 84 11 2 31 14...