KMBT2222A

SMD Type NPN Switching Transistor KMBT2222A SOT-23 +0.1 2.9-0.1 +0.1 0.4-0.1 Transistors Unit: mm ¡ö Features +0.1 2.4-0.1 ¡ñHigh current (max. 600 mA) ¡ñLow voltage (max.40 V). +0.1 1.3-0.1 1 +0.1 0.95-0.1 +0.1 1.9-0.1 2 0.55 0.4 3 +0.05 0.1-0.01 +0.1 0.97-0.1 1.Base +0.1 0.38-0.1 2.Emitter 3.collector ¡ö Absolute Maximum Ratings Ta = 25¡æ Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Total power dissipation Ta¡Ü 25 ¡æ Thermal resistance from junction to ambient www.DataSheet4U.com Operating and Storage and Temperature Range Symbol VCBO VCEO VEBO IC Ptot RèJA Tj, TSTG Rating 75 40 6 600 300 417 -65 to +150 Unit V V V mA mW K/W ¡æ 0-0.1 www.kexin.com.cn 1 SMD Type KMBT2222A ¡ö Electrical Characteristics Ta = 25¡æ Parameter Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector cutoff current Emitter cutoff current Symbol V(BR)CBO V(BR)CEO V(BR)EBO ICBO IEBO Testconditons IC = 10¦Ì A, IE = 0 IC = 10 mA, IB = 0 A, I C = 0 IC = 10 ¦Ì IE = 0; VCB = 60 V IE = 0; VCB = 60 V; Tj = 125 ¡æ IC = 0; VEB = 3 V IC = 0.1 mA; VCE = 10 V IC = 1 mA; VCE = 10 V IC = 10 mA; VCE = 10 V DC current gain hFE IC = 10 mA; VCE = 10 V; Ta = -55 ¡æ IC= 150 mA; VCE = 10 V IC = 150 mA; VCE = 1 V IC = 500 mA; VCE = 10 V collector-emitter saturation voltage VCEsat IC = 150 mA; IB = 15 mA IC = 500 mA; IB = 50 mA base-emitter saturation voltage Delay time Rise time Storage time Fall ti...