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B6NC60 Dataheets PDF



Part Number B6NC60
Manufacturers STMicroelectronics
Logo STMicroelectronics
Description STB6NC60
Datasheet B6NC60 DatasheetB6NC60 Datasheet (PDF)

N-CHANNEL 600V - 1Ω - 6A TO-220/TO-220FP/I2PAK PowerMESH™II MOSFET TYPE STP(B)6NC60(-1) STP6NC60FP s s s s s STP6NC60 - STP6NC60FP STB6NC60-1 VDSS 600 V 600 V RDS(on) < 1.2 Ω < 1.2 Ω ID 6A 6A 3 1 2 TYPICAL RDS(on) = 1.0 Ω EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED NEW HIGH VOLTAGE BENCHMARK GATE CHARGE MINIMIZED TO-220 TO-220FP DESCRIPTION The PowerMESH™II is the evolution of the first generation of MESH OVERLAY™. The layout refinements introduced greatly improve the Ron*area .

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N-CHANNEL 600V - 1Ω - 6A TO-220/TO-220FP/I2PAK PowerMESH™II MOSFET TYPE STP(B)6NC60(-1) STP6NC60FP s s s s s STP6NC60 - STP6NC60FP STB6NC60-1 VDSS 600 V 600 V RDS(on) < 1.2 Ω < 1.2 Ω ID 6A 6A 3 1 2 TYPICAL RDS(on) = 1.0 Ω EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED NEW HIGH VOLTAGE BENCHMARK GATE CHARGE MINIMIZED TO-220 TO-220FP DESCRIPTION The PowerMESH™II is the evolution of the first generation of MESH OVERLAY™. The layout refinements introduced greatly improve the Ron*area figure of merit while keeping the device at the leading edge for what concerns swithing speed, gate charge and ruggedness. APPLICATIONS HIGH CURRENT, HIGH SPEED SWITCHING s SWITH MODE POWER SUPPLIES (SMPS) s DC-AC CONVERTERS FOR WELDING EQUIPMENT AND UNINTERRUPTIBLE POWER SUPPLIES AND MOTOR DRIVES s 12 3 I2PAK INTERNAL SCHEMATIC DIAGRAM www.DataSheet4U.com ABSOLUTE MAXIMUM RATINGS Symbol VDS VDGR VGS ID ID IDM (q) PTOT dv/dt (1) VISO Tstg Tj Parameter Drain-source Voltage (VGS = 0) Drain-gate Voltage (RGS = 20 kΩ) Gate- source Voltage Drain Current (continuos) at TC = 25°C Drain Current (continuos) at TC = 100°C Drain Current (pulsed) Total Dissipation at TC = 25°C Derating Factor Peak Diode Recovery voltage slope Insulation Withstand Voltage (DC) Storage Temperature Max. Operating Junction Temperature –65 to 150 150 (1)ISD ≤6A, di/dt ≤100A/µs, V DD ≤ V(BR)DSS, Tj ≤ TJMAX. Value STP(B)6NC60(-1) STP6NC60FP 600 600 ±30 6 3.8 24 125 1.0 3 2500 6(*) 3.8(*) 24(*) 40 0.32 Unit V V V A A A W W/°C V/ns V °C °C (•)Pulse width limited by safe operating area (*) Limited only by maximum temperature allowed May 2001 1/10 STP6NC60/FP/STB6NC60-1 THERMAL DATA TO-220/I2PAK Rthj-case Rthj-amb Rthc-sink Tl Thermal Resistance Junction-case Max Thermal Resistance Junction-ambient Max Thermal Resistance Case-sink Typ Maximum Lead Temperature For Soldering Purpose 1.0 62.5 0.5 300 TO-220FP 3.1 °C/W °C/W °C/W °C AVALANCHE CHARACTERISTICS Symbol IAR EAS Parameter Avalanche Current, Repetitive or Not-Repetitive (pulse width limited by Tj max) Single Pulse Avalanche Energy (starting Tj = 25 °C, ID = IAR, VDD = 50 V) Max Value 6 320 Unit A mJ ELECTRICAL CHARACTERISTICS (TCASE = 25 °C UNLESS OTHERWISE SPECIFIED) OFF Symbol V(BR)DSS IDSS IGSS Parameter Drain-source Breakdown Voltage Zero Gate Voltage Drain Current (VGS = 0) Gate-body Leakage Current (VDS = 0) Test Conditions ID = 250 µA, VGS = 0 VDS = Max Rating VDS = Max Rating, TC = 125 °C VGS = ±30V Min. 600 1 50 ±100 Typ. Max. Unit V µA µA nA ON (1) Symbol VGS(th) RDS(on) ID(on) www.DataSheet4U.com Parameter Gate Threshold Voltage Static Drain-source On Resistance On State Drain Current Test Conditions VDS = VGS, ID = 250µA VGS = 10V, ID = 3 A VDS > ID(on) x RDS(on)max, VGS = 10V Min. 2 Typ. 3 1.0 Max. 4 1.2 Unit V Ω A 6 DYNAMIC Symbol gfs (1) Ciss Coss Crss Parameter Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Test Conditions VDS > ID(on) x RDS(on)max, ID = 3A VDS = 25V, f = 1 MHz, VGS = 0 Min. Typ. 6.5 1020 145 21 Max. Unit S pF pF pF 2/10 STP6NC60/FP/STB6NC60-1 ELECTRICAL CHARACTERISTICS (CONTINUED) SWITCHING ON Symbol td(on) tr Qg Qgs Qgd Parameter Turn-on Delay Time Rise Time Total Gate Charge Gate-Source Charge Gate-Drain Charge Test Conditions VDD = 300 V, ID = 3 A RG = 4.7Ω VGS = 10 V (see test circuit, Figure 3) VDD = 480V, ID = 6 A, VGS = 10V Min. Typ. 16 14 35 5.5 17.2 45.5 Max. Unit ns ns nC nC nC SWITCHING OFF Symbol tr(Voff) tf tc Parameter Off-voltage Rise Time Fall Time Cross-over Time Test Conditions VDD = 480V, ID = 6 A, RG = 4.7Ω, VGS = 10V (see test circuit, Figure 5) Min. Typ. 13 16 23 Max. Unit ns ns ns SOURCE DRAIN DIODE Symbol ISD ISDM (2) VSD (1) trr Qrr IRRM Parameter Source-drain Current Source-drain Current (pulsed) Forward On Voltage Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Current ISD = 6 A, VGS = 0 ISD = 6 A, di/dt = 100A/µs VDD = 100V, Tj = 150°C (see test circuit, Figure 5) 450 2.9 13 Test Conditions Min. Typ. Max. 6 24 1.6 Unit A A V ns µC A Note: 1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %. 2. Pulse width limited by safe operating area. www.DataSheet4U.com Safe Operating Area for TO-220/I2PAK Safe Operating Area for TO-220FP 3/10 STP6NC60/FP/STB6NC60-1 Thermal Impedence for TO-220/I2PAK Thermal Impedence for TO-220FP Output Characteristics Transfer Characteristics www.DataSheet4U.com Transconductance Static Drain-source On Resistance 4/10 STP6NC60/FP/STB6NC60-1 Gate Charge vs Gate-source Voltage Capacitance Variations Normalized Gate Threshold Voltage vs Temp. Normalized On Resistance vs Temperature www.DataSheet4U.com Source-drain Diode Forward Characteristics 5/10 STP6NC60/FP/STB6NC60-1 Fig. 1: Unclamped Inductive Load Test Circuit Fig. 2: Unclamped Inductive Waveform Fig. 3: Switching Times Test Circuit For Resistive Load Fig. 4: Gate Charge test Circuit www.DataSheet4U.com Fig. 5: Test Circuit For Inductive Load Switching And Di.


MSC23CV23257A-xxBS4 B6NC60 1N2970B


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