Document
N-CHANNEL 600V - 1Ω - 6A TO-220/TO-220FP/I2PAK PowerMESH™II MOSFET
TYPE STP(B)6NC60(-1) STP6NC60FP
s s s s s
STP6NC60 - STP6NC60FP STB6NC60-1
VDSS 600 V 600 V
RDS(on) < 1.2 Ω < 1.2 Ω
ID 6A 6A
3 1 2
TYPICAL RDS(on) = 1.0 Ω EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED NEW HIGH VOLTAGE BENCHMARK GATE CHARGE MINIMIZED
TO-220
TO-220FP
DESCRIPTION The PowerMESH™II is the evolution of the first generation of MESH OVERLAY™. The layout refinements introduced greatly improve the Ron*area figure of merit while keeping the device at the leading edge for what concerns swithing speed, gate charge and ruggedness. APPLICATIONS HIGH CURRENT, HIGH SPEED SWITCHING s SWITH MODE POWER SUPPLIES (SMPS) s DC-AC CONVERTERS FOR WELDING EQUIPMENT AND UNINTERRUPTIBLE POWER SUPPLIES AND MOTOR DRIVES
s
12
3
I2PAK
INTERNAL SCHEMATIC DIAGRAM
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ABSOLUTE MAXIMUM RATINGS
Symbol VDS VDGR VGS ID ID IDM (q) PTOT dv/dt (1) VISO Tstg Tj Parameter Drain-source Voltage (VGS = 0) Drain-gate Voltage (RGS = 20 kΩ) Gate- source Voltage Drain Current (continuos) at TC = 25°C Drain Current (continuos) at TC = 100°C Drain Current (pulsed) Total Dissipation at TC = 25°C Derating Factor Peak Diode Recovery voltage slope Insulation Withstand Voltage (DC) Storage Temperature Max. Operating Junction Temperature –65 to 150 150
(1)ISD ≤6A, di/dt ≤100A/µs, V DD ≤ V(BR)DSS, Tj ≤ TJMAX.
Value STP(B)6NC60(-1) STP6NC60FP 600 600 ±30 6 3.8 24 125 1.0 3 2500 6(*) 3.8(*) 24(*) 40 0.32
Unit V V V A A A W W/°C V/ns V °C °C
(•)Pulse width limited by safe operating area (*) Limited only by maximum temperature allowed
May 2001
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STP6NC60/FP/STB6NC60-1
THERMAL DATA
TO-220/I2PAK Rthj-case Rthj-amb Rthc-sink Tl Thermal Resistance Junction-case Max Thermal Resistance Junction-ambient Max Thermal Resistance Case-sink Typ Maximum Lead Temperature For Soldering Purpose 1.0 62.5 0.5 300 TO-220FP 3.1 °C/W °C/W °C/W °C
AVALANCHE CHARACTERISTICS
Symbol IAR EAS Parameter Avalanche Current, Repetitive or Not-Repetitive (pulse width limited by Tj max) Single Pulse Avalanche Energy (starting Tj = 25 °C, ID = IAR, VDD = 50 V) Max Value 6 320 Unit A mJ
ELECTRICAL CHARACTERISTICS (TCASE = 25 °C UNLESS OTHERWISE SPECIFIED) OFF
Symbol V(BR)DSS IDSS IGSS Parameter Drain-source Breakdown Voltage Zero Gate Voltage Drain Current (VGS = 0) Gate-body Leakage Current (VDS = 0) Test Conditions ID = 250 µA, VGS = 0 VDS = Max Rating VDS = Max Rating, TC = 125 °C VGS = ±30V Min. 600 1 50 ±100 Typ. Max. Unit V µA µA nA
ON (1)
Symbol VGS(th) RDS(on) ID(on)
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Parameter Gate Threshold Voltage Static Drain-source On Resistance On State Drain Current
Test Conditions VDS = VGS, ID = 250µA VGS = 10V, ID = 3 A VDS > ID(on) x RDS(on)max, VGS = 10V
Min. 2
Typ. 3 1.0
Max. 4 1.2
Unit V Ω A
6
DYNAMIC
Symbol gfs (1) Ciss Coss Crss Parameter Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Test Conditions VDS > ID(on) x RDS(on)max, ID = 3A VDS = 25V, f = 1 MHz, VGS = 0 Min. Typ. 6.5 1020 145 21 Max. Unit S pF pF pF
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STP6NC60/FP/STB6NC60-1
ELECTRICAL CHARACTERISTICS (CONTINUED) SWITCHING ON
Symbol td(on) tr Qg Qgs Qgd Parameter Turn-on Delay Time Rise Time Total Gate Charge Gate-Source Charge Gate-Drain Charge Test Conditions VDD = 300 V, ID = 3 A RG = 4.7Ω VGS = 10 V (see test circuit, Figure 3) VDD = 480V, ID = 6 A, VGS = 10V Min. Typ. 16 14 35 5.5 17.2 45.5 Max. Unit ns ns nC nC nC
SWITCHING OFF
Symbol tr(Voff) tf tc Parameter Off-voltage Rise Time Fall Time Cross-over Time Test Conditions VDD = 480V, ID = 6 A, RG = 4.7Ω, VGS = 10V (see test circuit, Figure 5) Min. Typ. 13 16 23 Max. Unit ns ns ns
SOURCE DRAIN DIODE
Symbol ISD ISDM (2) VSD (1) trr Qrr IRRM Parameter Source-drain Current Source-drain Current (pulsed) Forward On Voltage Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Current ISD = 6 A, VGS = 0 ISD = 6 A, di/dt = 100A/µs VDD = 100V, Tj = 150°C (see test circuit, Figure 5) 450 2.9 13 Test Conditions Min. Typ. Max. 6 24 1.6 Unit A A V ns µC A
Note: 1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %. 2. Pulse width limited by safe operating area.
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Safe Operating Area for TO-220/I2PAK
Safe Operating Area for TO-220FP
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STP6NC60/FP/STB6NC60-1
Thermal Impedence for TO-220/I2PAK Thermal Impedence for TO-220FP
Output Characteristics
Transfer Characteristics
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Transconductance
Static Drain-source On Resistance
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STP6NC60/FP/STB6NC60-1
Gate Charge vs Gate-source Voltage Capacitance Variations
Normalized Gate Threshold Voltage vs Temp.
Normalized On Resistance vs Temperature
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Source-drain Diode Forward Characteristics
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STP6NC60/FP/STB6NC60-1
Fig. 1: Unclamped Inductive Load Test Circuit Fig. 2: Unclamped Inductive Waveform
Fig. 3: Switching Times Test Circuit For Resistive Load
Fig. 4: Gate Charge test Circuit
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Fig. 5: Test Circuit For Inductive Load Switching And Di.