ZXMN2088DE6

Part no. ZXMN2088DE6 20V Dual SOT23-6 N-channel enhancement mode MOSFET with low gate drive capability Summary V(BR)DSS RDS(on) (Ω) 0.200 @ VGS= 4.5V ID (A) 2.1 1.9 1.7 20 0.240 @ VGS= 2.5V 0.310 @ VGS= 1.8V Description This new generation dual n-channel trench MOSFET from Zetex features low on-resistance achievable with low gate drive. Features Low on-resistance Low gate drive capability SOT23-6 (dual) package Applications Power Management functions Disconnect switches Relay driving and load switching www.DataSheet4U.com Ordering information Device Reel size (inches) Tape width (mm) Quantity per reel G1 S2 G2 Pinout – top view D1 S1 D2 ZXMN2088DE6TA Device marking 2088 7 8 3,000 Issue 2 - June 2008 © Diodes Incorporated 2008 1 www.zetex.com www.diodes.com ZXMN2088DE6 Absolute maximum ratings Parameter Drain-Source voltage Gate-Source voltage Continuous Drain current @ VGS= 4.5V; TA=25°C @ VGS= 4.5V; TA=70°C @ VGS= 4.5V; TA=25°C Pulsed Drain current (c) Power dissipation at TA =25°C (a) (d) Linear derating factor Power dissipation at TA =25°C Linear derating factor Power dissipation at TA =25°C Linear derating factor Operating and storage temperature range Tj, Tstg (b) (d) (a) (e) (b) (d) (b) (d) (a) (d) Symbol VDSS VGS ID Limit 20 ±8 2.1 1.7 1.7 Unit V V A IDM PD PD PD 8 0.9 7.2 1.1 8.8 1.3 10.4 -55 to +150 A W mW/°C W mW/°C W mW/°C °C Thermal resistance Parameter Junction to Ambient (a) (d) Junction to Ambient (a) (e) www.DataSheet4...