FDFMA2P859T

FDFMA2P859T Integrated P-Channel PowerTrench® MOSFET and Schottky Diode FDFMA2P859T –20 V, –3.0 A, 120 m: Features MOSFET: „ Max rDS(on) = 120 m: at VGS = –4.5 V, ID = –3.0 A „ Max rDS(on) = 160 m: at VGS = –2.5 V, ID = –2.5 A „ Max rDS(on) = 240 m: at VGS = –1.8 V, ID = –1.0 A July 2009 Integrated P-Channel PowerTrench® MOSFET and Schottky Diode General Description This device is designed specifically as a single package solution for the battery charge switch in cellular handset and other ultra-portable applications. It features a MOSFET with low on-state resistance and an independently connected low forward voltage schottky diode for minimum conduction losses. The MicroFET 2x2 Thin package offers exceptional thermal performance for its physical size and is well suited to linear mode applications. Schottky: „ VF < 0.54 V @ 1 A „ Low profile - 0.55 mm maximum - in the new package MicroFET 2x2 Thin „ Free from halogenated compounds and antimony oxides „ RoHS compliant Pin 1 A NC D A 1 NC 2 D 3 C MicroFET 2x2 Thin G S 6 C 5 G 4 S MOSFET www.DataSheet4U.com Symbol VDSS VGSS ID PD TJ, TSTG VRRM IO Maximum Ratings TA = 25 °C unless otherwise noted Parameter Drain to Source Voltage Gate to Source Voltage Drain Current -Continuous -Pulsed Power Dissipation Power Dissipation Operating and Storage Junction Temperature Range Schottky Repetitive Peak Reverse Voltage Schottky Average Forward Current (Note 1a) (Note 1b) (Note 1a) Ratings –20 ±8 –3 –6 1.4 0.7 –55 to +150 30 1 Units ...