Q2N2222 Datasheet PDF | ETC





(PDF) Q2N2222 Datasheet PDF

Part Number Q2N2222
Description Amplifier Transistors
Manufacture ETC
Total Page 6 Pages
PDF Download Download Q2N2222 Datasheet PDF

Features: Q2N2222 Amplifier Transistors NPN Silico n MAXIMUM RATINGS Rating Collector–Em itter Voltage Collector–Base Voltage Emitter–Base Voltage Collector Curren t — Continuous Total Device Dissipati on @ TA = 25°C Derate above 25°C Tota l Device Dissipation @ TC = 25°C Derat e above 25°C Operating and Storage Jun ction Temperature Range Symbol VCEO VCB O VEBO IC PD PD TJ, Tstg Value 40 75 6. 0 600 625 5.0 1.5 12 –55 to +150 Unit Vdc Vdc Vdc mAdc mW mW/°C Watts mW/° C °C okDatasheet.com 1 2 3 CASE 29 11, STYLE 17 TO–92 (TO–226AA) CO LLECTOR 1 2 BASE 3 EMITTER THERMAL CHA RACTERISTICS Characteristic Thermal Res istance, Junction to Ambient Thermal Re sistance, Junction to Case Symbol RqJA RqJC Max 200 83.3 Unit °C/W °C/W ELE CTRICAL CHARACTERISTICS (TA = 25°C unl ess otherwise noted) Characteristic Sym bol Min Max Unit OFF CHARACTERISTICS C ollector–Emitter Breakdown Voltage ww w.DataSheet4U.com (IC = 10 mAdc, IB = 0 ) Collector–Base Breakdown Voltage (IC = 10 mAdc, IE = 0) Emitter–Base Breakdown Voltage (I.

Keywords: Q2N2222, datasheet, pdf, ETC, Amplifier, Transistors, stock, pinout, distributor, price, schematic, inventory, databook, Electronic, Components, Parameters, parts, cross reference, chip, Semiconductor, circuit, Electric, manual, substitute, Equivalent

Q2N2222 datasheet
Q2N2222
okDatasheet.com
Amplifier Transistors
NPN Silicon
MAXIMUM RATINGS
Rating
Collector–Emitter Voltage
Collector–Base Voltage
Emitter–Base Voltage
Collector Current — Continuous
Total Device Dissipation @ TA = 25°C
Derate above 25°C
Total Device Dissipation @ TC = 25°C
Derate above 25°C
Operating and Storage Junction
Temperature Range
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Case
Symbol
VCEO
VCBO
VEBO
IC
PD
PD
TJ, Tstg
Symbol
RqJA
RqJC
Value
40
75
6.0
600
625
5.0
1.5
12
–55 to +150
Max
200
83.3
Unit
Vdc
Vdc
Vdc
mAdc
mW
mW/°C
Watts
mW/°C
°C
Unit
°C/W
°C/W
1
2
3
CASE 29–11, STYLE 17
TO–92 (TO–226AA)
COLLECTOR
1
2
BASE
3
EMITTER
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
OFF CHARACTERISTICS
www.DataSChoeleletc4tUor.coEmmitter Breakdown Voltage
(IC = 10 mAdc, IB = 0)
Collector–Base Breakdown Voltage
(IC = 10 mAdc, IE = 0)
Emitter–Base Breakdown Voltage
(IE = 10 mAdc, IC = 0)
Collector Cutoff Current
(VCE = 60 Vdc, VEB(off) = 3.0 Vdc)
Collector Cutoff Current
(VCB = 60 Vdc, IE = 0)
(VCB = 60 Vdc, IE = 0, TA = 150°C)
Emitter Cutoff Current
(VEB = 3.0 Vdc, IC = 0)
Collector Cutoff Current
(VCE = 10 V)
Base Cutoff Current
(VCE = 60 Vdc, VEB(off) = 3.0 Vdc)
Symbol
Min
Max
Unit
V(BR)CEO
V(BR)CBO
V(BR)EBO
ICEX
ICBO
IEBO
ICEO
IBEX
40
75
6.0
— Vdc
— Vdc
— Vdc
10 nAdc
µAdc
0.01
10
10 nAdc
10 nAdc
20 nAdc
Free Datasheet Search Engine
OKDATASHEET.COM
1 Publication Order Number:
Q2N2222

Q2N2222 datasheet   Q2N2222 datasheet   Q2N2222 datasheet   Q2N2222 datasheet   Q2N2222 datasheet   Q2N2222 datasheet  






Index : 0  1  2  3   4  5  6  7   8  9  A  B   C  D  E  F   G  H  I  J   K  L  M  N   O  P  Q  R   S  T  U  V   W  X  Y  Z
@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site (Privacy Policy & Contact)